Three-dimensional network for chemical mechanical polishing

1. A polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium, the polishing pad comprising:

a) a three-dimensional network of interconnected unit cells, the interconnected unit cells being reticulated or having an open cell structure for allowing fluid flow and removal of polishing debris;

b) a plurality of polishing elements forming the three-dimensional network of interconnected unit cells, the polishing elements having a mean height to a mean width ratio of at least 3 for allowing the polishing medium to flow through the plurality of polishing elements of the interconnected unit cells;

c) a polishing surface formed from the plurality polishing elements, the polishing surface having a surface area measured in a plane parallel to the polishing surface that remains consistent for multiple polishing operations.

2. The polishing pad according to claim 1 , wherein the plurality of polishing elements constitute less than 30 percent of polishing pad volume.

3. The polishing pad according to claim 1 , wherein a total cross sectional area of the polishing surface varies less than 25 percent between an initial total cross sectional area and a half-height of the interconnected unit cells.

4. The polishing pad according to claim 1 , wherein a total cross sectional area of the polishing surface varies less than 10 percent between an initial total cross sectional area and a half-height of the interconnected unit cells.

5. The polishing pad according to claim 1 , wherein cross-sectional areas of the plurality of polishing elements are substantially circular.

6. The polishing pad according to claim 1 , wherein cross-sectional areas of the plurality of polishing elements are streamlined with respect to fluid flow in a plane of cross-sectional area of the plurality of polishing elements.

7. A polishing pad useful for polishing at least one of a magnetic, optical and semiconductor substrate in the presence of a polishing medium, the polishing pad comprising:

a) a three-dimensional network of interconnected unit cells, the interconnected unit cells having a mean length and a mean width with the mean length and the mean width being unequal and the interconnected unit cells being reticulated or open-cell structure for allowing fluid flow and removal of polishing debris;

b) a plurality of polishing elements forming the three-dimensional network of interconnected unit cells, the polishing elements having a mean height to a mean width ratio of at least 5 for allowing the polishing medium to flow through the plurality of polishing elements of the interconnected unit cells;

c) a polishing surface formed from the plurality polishing elements, the polishing surface having a surface area measured in a plane parallel to the polishing surface that remains consistent for multiple polishing operations.

8. The polishing pad according to claim 7 , wherein the plurality of polishing elements constitute less than 30 percent of polishing pad volume above the polishing base; and a total cross sectional area of the polishing surface varies less than 25 percent between an initial total cross sectional area and a half-height of the interconnected unit cells.

9. A method of polishing at least one of a magnetic, optical and semiconductor substrate with a polishing pad in the presence of a polishing medium, comprising the steps of:

creating dynamic contact between the polishing pad and the substrate to polish the substrate, the polishing pad comprising: a three-dimensional network of interconnected unit cells, the interconnected unit cells being reticulated or open-cell structure for allowing fluid flow and removal of polishing debris; a plurality of polishing elements forming the three-dimensional network of interconnected unit cells, the polishing elements having a mean height to a mean width ratio of at least 3 for allowing the polishing medium to flow through the plurality of polishing elements of the interconnected unit cells; a polishing surface formed from the plurality polishing elements, the polishing surface having a surface area measured in a plane parallel to the polishing surface that remains consistent for multiple polishing operations; and

removing polishing debris through openings between the polishing elements.

10. The method of claim 9 wherein the dynamic contact polishes a series of patterned semiconductor wafers.