Process and apparatus for modifying a surface in a work region

1. A process for manufacturing changes of a substrate which comprises:

(a) providing a substrate with a surface on a stage which provides a 100×100×100 microns or smaller work region which allows positionally accurate three dimensional movements in a work environment; and

(b) impinging beams of matter or radiation from an adjacent plasma source having a beam with a cross-sectional width of 100 microns or less into the work region to modify the surface of the substrate in at least one dimension.

2. The process of claim 1 wherein method of the plasma source is computer controlled.

3. An apparatus which comprises:

(a) a stage for a substrate to be modified in a work region which is 100×100×100 microns or less on the substrate; and

(b) a plasma source which can impinge a beam of matter or radiation from an adjacent plasma which is 100 microns or less in cross-sectional width into the work region so as to modify the surface of the substrate in at least one dimension.

4. The apparatus of claim 3 wherein method of the plasma source is moveable and computer controlled.

5. A process for manufacturing devices by modifications of a substrate on a micron or less scale which comprises:

(a) providing a substrate with a surface which provides a 100×100×100 microns work region or less on a stage of an apparatus which allows precisely accurate three dimensional movement in the work region;

(b) viewing the substrate with an imaging device with a screen for visualization of the work region of the substrate in three dimensions;

(c) impinging beams of matter or radiation from a plasma source adjacent to the work region having a beam cross-sectional width of 100 microns or less in width into the work region on the surface to modify the substrate in at least one dimension in the work region; and

(d) viewing the modified surface of the substrate with the imaging device to determine that the substrate has been modified to provide the device.

6. The process of claim 5 wherein the beam is free radicals, ions or atoms as the matter which modifies the substrate.

7. The process of claim 5 wherein the beam is from an ion or electron source which modifies the substrate.

8. The process of claim 5 wherein a laser beam is used for detecting the modification of the surface by the imaging device.

9. The process of claim 5 wherein the imaging device is an atomic force microscope with a probe contacting the surface of the substrate to determine the modifications of the substrate over time during the process.

10. The process of claim 9 wherein the probe enables manipulation of components placed on the substrate to position the components in the work region.

11. The process of claim 9 wherein the probe is used to cut into the surface of the substrate.

12. The process of claim 5 wherein the beam is a plasma which modifies the surface of the substrate by etching.

13. The process of claim 5 wherein the beam is a plasma which modifies the surface of the substrate by depositing a material on the surface from the plasma.

14. The process of claim 13 wherein the material deposited is a bonding material for a component mounted on the surface of the substrate.

15. The process of claim 5 wherein the device is a MEMS device.

16. The process of claim 5 wherein the beam is used to modify the surface to enhance visualization of the surface.