IP Library › Granted Patent US 7,495,953
Granted Patent B2
US 7,495,953 · App. 11/458,995 · Granted Feb 24, 2009

System for configuring compensation

Assignee: SanDisk Corporation
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,495,953
App. No.
11/458,995
Granted
Feb 24, 2009
Kind
B2
Abstract

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this coupling, the read or programming process for a given memory cell can take into account the programmed state of an adjacent memory cell. To determine whether compensation is needed, a process can be performed that includes sensing information about the programmed state of an adjacent memory cell (e.g., on an adjacent bit line or other location).

Claims (43)

1. A non-volatile storage system, comprising:

a plurality of non-volatile storage elements; and

a managing circuit in communication with said non-volatile storage elements, said managing circuit configures said non-volatile storage system to either compensate for floating gate coupling during reading or compensate for floating gate coupling during programming, based on said configuring said managing system causes compensation for coupling during reading of said non-volatile storage elements if said non-volatile storage system is configured to compensate for floating gate coupling during reading and causes compensation for coupling during programming of said non-volatile storage elements if said non-volatile storage system is configured to compensate for floating gate coupling during programming.

2. A non-volatile storage system according to claim 1 , wherein:

said non-volatile storage system is installed in a host and is in communication with a host.

3. A non-volatile storage system according to claim 2 , wherein:

said configuring includes said host notifying said managing circuit of preference information and said managing circuit performing said configuring based on said preference information.

4. A non-volatile storage system according to claim 2 , wherein:

said configuring includes said host notifying said managing circuit of user preference information and said managing circuit performing said configuring based on said user preference information.

5. A non-volatile storage system according to claim 2 , wherein:

said configuring includes said host notifying said managing circuit of host identity information and said managing circuit performing said configuring based on said host identity information.

6. A non-volatile storage system according to claim 2 , wherein:

said configuring includes said host notifying said managing circuit of host use information and said managing circuit performing said configuring based on said host use information.

7. A non-volatile storage system according to claim 2 , wherein:

said configuring is based on a file type on one or more files stored in said non-volatile storage elements.

8. A non-volatile storage system according to claim 1 , wherein:

said non-volatile storage elements are NAND flash memory devices.

9. A non-volatile storage system according to claim 1 , wherein:

said non-volatile storage elements are multi-state flash memory devices.

10. A non-volatile storage system, comprising:

a plurality of non-volatile storage elements; and

a managing circuit in communication with said non-volatile storage elements, said managing circuit stores an indication of whether to compensate for floating gate coupling during reading of said non-volatile storage elements or compensate for floating gate coupling during programming of said of non-volatile storage elements, based on said indication said managing circuit compensates for coupling during reading if said indication indicates to compensate for floating gate coupling during reading and compensates for coupling during programming if said indication indicates to compensate for floating gate coupling during programming.

11. A non-volatile storage system according to claim 10 , wherein:

said managing circuit receives a preference from a host device and determines said indication based on said preference.

12. A non-volatile storage system according to claim 10 , wherein:

said managing circuit receives user choice information from a host device and determines said indication based on said user choice information.

13. A non-volatile storage system according to claim 10 , wherein:

said managing circuit receives identity information from a host device and determines said indication based on said identity information.

14. A non-volatile storage system according to claim 10 , wherein:

said managing circuit receives use information from a host device and determines said indication based on said use information.

15. A non-volatile storage system according to claim 10 , wherein:

said managing circuit determines said indication based on a types of file stored in said non-volatile storage elements.

16. A non-volatile storage system according to claim 10 , wherein:

said non-volatile storage elements are NAND flash memory devices.

17. A non-volatile storage system according to claim 10 , wherein:

said non-volatile storage elements are multi-state flash memory devices.

18. A non-volatile storage system, comprising:

a plurality of non-volatile storage elements;

means for receiving an indication from a host device whether to compensate for floating gate coupling during reading of said non-volatile storage elements or compensate for floating gate coupling during programming of said non-volatile storage elements;

means for compensating for coupling during reading of said non-volatile storage elements if said indication specifies to compensate for floating gate coupling during reading; and

means for compensating for coupling during programming of said non-volatile storage elements if said indication specifies to compensate for floating gate coupling during programming.

19. A non-volatile storage system according to claim 18 , wherein:

said non-volatile storage elements are multi-state NAND flash memory devices.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 9, 2014
From: SANDISK TECHNOLOGIES, INC.
To: INNOVATIVE MEMORY SYSTEMS, INC.
Reel/Frame 034438/0507 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 1, 2011
From: SANDISK CORPORATION
To: SANDISK TECHNOLOGIES INC.
Reel/Frame 026369/0609 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 28, 2006
From: LI, YAN
To: SANDISK CORPORATION
Reel/Frame 018322/0748 →
Continuity (1)
Related Publication 20080019173A1 · Jan 24, 2008