Ferroelectric capacitor and its manufacturing method and ferroelectric memory device
A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer; (c) forming a first electrode above the second crystalline barrier layer; (d) forming a ferroelectric film on the first electrode; and (e) forming a second electrode on the ferroelectric film.
1. A method for manufacturing a ferroelectric capacitor, the method comprising the steps of:
(a) forming a first crystalline barrier layer;
(b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer;
(c) forming a first electrode above the second crystalline barrier layer;
(d) forming a ferroelectric film on the first electrode; and
(e) forming a second electrode on the ferroelectric film,
wherein, in the step (b), the first crystalline barrier layer is annealed in an atmosphere containing nitrogen, thereby nitriding the first crystalline barrier layer, and the annealing is conducted at about 350° C. to 650° C.
2. A method for manufacturing a ferroelectric capacitor according to claim 1 , wherein, in the step (a), the first crystalline barrier layer is formed on a plug.
3. A method for manufacturing a ferroelectric capacitor according to claim 1 , wherein the first crystalline barrier layer includes titanium and aluminum, and the second crystalline barrier layer is composed of nitride of titanium and aluminum.
4. A method for manufacturing a ferroelectric capacitor according to claim 3 , wherein the first crystalline barrier layer includes, as a constituent element thereof, titanium by 70 atom % or more.
5. A method for manufacturing a ferroelectric capacitor according to claim 1 further comprising, prior to the step (a), the step (f) of exciting plasma of ammonia gas and irradiating the plasma to a surface of the layer on which the first crystalline barrier layer is to be formed.
6. A ferroelectric memory device comprising:
a switching transistor;
a plug that is electrically connected to the switching transistor; and
a ferroelectric capacitor provided on the plug, wherein the ferroelectric capacitor includes a first electrode provided on a crystalline barrier layer composed of nitride, a ferroelectric film provided on the first electrode, and a second electrode provided on the ferroelectric film,
wherein the crystalline barrier layer is annealed in an atmosphere containing nitrogen, thereby nitriding the first crystalline barrier layer, and the annealing is conducted at about 350° C. to 650° C.