Concentric gate nanotube transistor devices
Single-walled carbon nanotube transistor devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A concentric gate surrounds at least a portion of a nanotube in a pore. A transistor of the invention may be especially suited for power transistor or power amplifier applications.
1. A method of making a device comprising:
anodizing an aluminum substrate to produce an alumina template with a plurality of pores, each having a pore diameter;
forming a conductive layer in the pores;
forming on the conductive layer in the pores an insulating layer; and
exposing the alumina template having pores to a hydrocarbon gas at a temperature to grow carbon nanotubes in the pores, each carbon nanotube having an outer diameter less than the pore diameter of the pore in which the carbon nanotube is produced, wherein when growing the carbon nanotubes, the carbon nanotubes are electrically insulated from the conductive layer by the insulating layer.
2. The method of claim 1 wherein the conductive layer is at least one of polysilicon or metal.
3. The method of claim 1 wherein the insulating layer is an oxide.
4. The method of claim 1 wherein the carbon nanotubes are single-walled carbon nanotubes.
5. The method of claim 1 wherein the step of exposing the alumina template having pores to a hydrocarbon gas at a temperature to grow carbon nanotubes in the pores, each carbon nanotube having an outer diameter less than the pore diameter of the pore in which the carbon nanotube is produced is replaced by
transferring single-walled carbon nanotubes to the pores.
6. The method of claim 1 wherein a plurality of carbon nanotubes are coupled in parallel.
7. The method of claim 6 wherein conductive layers in the pores of the plurality of carbon nanotubes are coupled together.
8. The method of claim 1 wherein the step of anodizing an aluminum substrate to produce an alumina template with a plurality of pores, each having a pore diameter is replaced by
anodizing an aluminum layer to produce an alumina template with a plurality of pores, each having a pore diameter.
9. The method of claim 8 wherein the aluminum layer is provided on a substrate material.
10. A method of making a device comprising:
providing a porous layer comprising a plurality of pores having a pore diameter;
forming a conductive layer in the pores along a wall of the pores;
forming on the conductive layer in the pores a first insulating layer; and
exposing the porous layer to a hydrocarbon gas at a temperature to grow carbon nanotubes in the pores, each carbon nanotube having an outer diameter less than the pore diameter of a pore in which the carbon nanotube is produced, wherein the nanotubes extend along the wall of the pores beside the conductive and first insulating layers.
11. The method of claim 10 wherein the step of exposing the porous layer to a hydrocarbon gas at a temperature to grow carbon nanotubes in the pores, each carbon nanotube having an outer diameter less than the pore diameter of a pore in which the carbon nanotube is produced is replaced by
transferring single-walled carbon nanotubes to the pores.
12. The method of claim 10 wherein when the porous layer is a conductive material the method further comprises:
forming a second insulating layer in the pores, wherein the conductive layer is formed on the second insulating layer.
13. The method of claim 12 wherein the porous layer is at least one of aluminum, silicon, silicon germanium, gallium nitride, germanium, or gallium arsenide.
14. The method of claim 10 wherein the porous layer is an insulating material comprising at least one of alumina, silicon oxide, plastic, polymer, glass, or quartz.
15. The method of claim 10 wherein a plurality of carbon nanotubes are coupled in parallel.
16. The method of claim 15 wherein conductive layers in the pores of the plurality of carbon nanotubes are coupled together.
17. The method of claim 15 wherein the porous layer is alumina formed on a silicon substrate.
18. The method of claim 10 wherein the device is a transistor and a conductive layer in a pore is a gate electrode of the transistor.
19. The method of claim 1 wherein the conductive layer is formed along a wall of a pore, and a nanotube extends along the wall besides the conductive layer.
20. The method of claim 1 wherein the insulating layer in a pore has an opening, less than the pore diameter, through which a carbon nanotube extends.
21. The method of claim 1 wherein the conductive layer in a pore has a first opening, less than the pore diameter, within which the insulating layer is formed.
22. The method of claim 21 wherein the insulating layer in the pore has a second opening, less than a diameter of the first opening, through which a carbon nanotube extends.
23. The method of claim 10 wherein the conductive layer in a pore has a first opening, less than the pore diameter, within which the insulating layer is formed.
24. The method of claim 10 wherein the insulating layer in the pore has a second opening, less than a diameter of the first opening, through which a carbon nanotube extends.
25. The method of claim 10 wherein when growing the carbon nanotubes, the carbon nanotubes are electrically insulated from the conductive layer by the insulating layer.
26. A method of making a device comprising:
providing a layer comprising a plurality of pore openings;
forming a conductive layer having first openings in the pore openings;
forming a first insulating layer on the conductive layer in the first openings, wherein the first insulating layer has second openings in the pore openings; and
forming carbon nanotubes extending through the second openings.
27. The method of claim 26 wherein the forming carbon nanotubes in the second openings comprises:
exposing the layer to a hydrocarbon gas at a temperature to grow carbon nanotubes in the second openings.
28. The method of claim 26 wherein the forming carbon nanotubes in the second openings comprises:
transferring single-walled carbon nanotubes to the second openings.
29. The method of claim 26 wherein the second openings extend a length of the pore openings.
30. The method of claim 26 comprising:
forming a second insulating layer in the pore openings, wherein the second insulating layer has a third opening within which the conductive layer is formed.
31. The method of claim 30 wherein the third opening is larger than the first opening, which is larger than the second opening.