Integrated circuit with self-aligned line and via
View Patent ↗An integrated circuit is provided having a base with a first dielectric layer formed thereon. A second dielectric layer is formed over the first dielectric layer. A third dielectric layer is formed in spaced-apart strips over the second dielectric layer. A first trench opening is formed through the first and second dielectric layers between the spaced-apart strips of the third dielectric layer. A second trench opening is formed contiguously with the first trench opening through the first dielectric layer between the spaced-apart strips of the third dielectric layer. Conductor metals in the trench openings form self-aligned trench interconnects.
1. An integrated circuit comprising:
a base;
a first dielectric layer over the base;
a second dielectric layer over the first dielectric layer;
a third dielectric layer over the second dielectric layer formed in spaced apart strips;
a first trench opening vertically through the first and second dielectric layers between the spaced apart strips of the third dielectric layer;
a second trench opening vertically only through a first stop layer, the second dielectric layer, and between the spaced apart strips of the third dielectric layer and contiguous with the first trench opening; and
a conductor in the first and second trench openings forming a first and second self-aligned trench interconnect, the first and second trench openings possessing substantially of equal widths.
2. The integrated circuit as claimed in claim 1 including:
a third trench opening vertically through the first and second dielectric layers between the spaced apart strips of the third dielectric layer and contiguous with the second trench opening; and wherein:
the conductor in the first and second trench openings is in the third trench opening.
3. The integrated circuit as claimed in claim 1 wherein:
the conductor includes a portion extending above the third dielectric layer.
4. The integrated circuit as claimed in claim 1 wherein:
the third dielectric layer includes a dielectric protection layer.
5. The integrated circuit as claimed in claim 1 wherein:
the first stop layer is deposited between the first and second dielectric layers.
6. A integrated circuit comprising:
a base;
a first dielectric layer over the base;
a first stop layer over the first dielectric layer;
a second dielectric layer over the first stop layer;
a third dielectric layer over the second dielectric layer;
a first trench opening vertically through the first and second dielectric layers and the first stop layer between spaced apart strips of the third dielectric layer;
a second trench opening vertically only through the first stop layer, the second dielectric layer, and between spaced apart strips of the third dielectric layer and contiguous with the first trench opening; and
a conductor in the first and second trench openings forming a first and second self-aligned trench interconnect, the first and second trench openings possessing substantially equal widths.
7. The integrated circuit as claimed in claim 6 wherein:
a third trench opening vertically through the first and second dielectric layers and the first stop layer between the spaced apart strips of the third dielectric layer and contiguous with the second trench opening;
and wherein:
the conductor in the first and second trench openings is in the third trench opening.
8. The integrated circuit as claimed in claim 6 wherein:
the conductor includes a portion extending above the third dielectric layer to form an interconnect line.
9. The integrated circuit as claimed in claim 6 including:
the first trench opening in the second dielectric layer is larger than the first trench opening in the first dielectric layer to form a bordered interconnect.
10. The integrated circuit as claimed in claim 6 wherein:
the second dielectric layer is a material having a dielectric constant below 3.9; and wherein:
the third dielectric layer includes a dielectric protection layer.