Removing undesirable nanotubes during nanotube device fabrication
Fabricating single-walled carbon nanotube transistor devices includes removing undesirable types of nanotubes. These undesirable types of nanotubes may include nonsemiconducting nanotubes, multiwalled nanotubes, and others. The undesirable nanotubes may be removed electrically using voltage or current, or a combination of these. This approach to removing undesirable nanotubes is sometimes referred to as “burn-off.” The undesirable nanotubes may be removed chemically or using radiation. The undesirable nanotubes of an integrated circuit may be removed in sections or one transistor (or a group of transistors) at a time in order to reduce the electrical current used or prevent damage to the integrated circuit during burn-off.
1. A method comprising:
providing a template having a top surface and a bottom surface comprising a plurality of openings extending into the template from the top surface toward the bottom surface;
processing to obtain a mixture of single-walled carbon nanotubes and metallic carbon nanotubes in the openings of the template;
providing a first electrode to couple to first ends of the mixture of carbon nanotubes;
providing a second electrode to couple to second ends of the mixture of carbon nanotubes;
forming a gate electrode on the porous structure; and
applying voltages to the gate and the first and second electrode to cause a current to flow through the metallic carbon nanotubes, wherein the metallic carbon nanotubes are destroyed by the current while leaving the single-walled carbon nanotubes.
2. The method of claim 1 wherein the current is above about 15 microamps per carbon nanotube.
3. The method of claim 1 wherein the current is above about 25 microamps per carbon nanotube.
4. The method of claim 1 wherein the destroyed metallic single-walled carbon nanotubes can no longer conduct current from the first electrode to the second electrode.
5. The method of claim 1 wherein the gate electrode extends into the template.
6. A method comprising:
providing a template having a top surface and a bottom surface comprising a plurality of openings extending into the template from the top surface toward the bottom surface;
processing to produce a mixture of semiconducting and metallic carbon nanotubes in openings of the template;
providing a first electrode to couple to first ends of the mixture of carbon nanotubes;
providing a second electrode to couple to second ends of the mixture of carbon nanotubes;
forming a gate electrode on the template; and
applying voltages to the gate and the first and second electrode to cause the metallic carbon nanotubes to be destroyed while leaving the semiconducting carbon nanotubes.
7. The method of claim 6 wherein the metallic nanotubes are not effectively gated by the voltage applied at the gate electrode.
8. The method of claim 6 wherein the greater numbers of metallic nanotubes are destroyed than semiconducting carbon nanotubes.
9. The method of claim 6 wherein the voltage placed across the first and second electrodes is pulsed.
10. The method of claim 6 wherein the voltage placed across the first and second electrodes is a DC continuous voltage for a specified time period.
11. The method of claim 6 wherein the voltage placed across the first and second electrodes is a DC continuous voltage for a first specified time period and a pulsed voltage for a second time period.
12. The method of claim 6 wherein the voltage placed across the first and second electrodes a first voltage for a first time period, second voltage for a second time period, and third voltage for a third time period.
13. The method of claim 12 wherein the first voltage is higher than the second voltage, which is higher than the third voltage, and the first time is before the second time period, which before the third time period.
14. The method of claim 6 wherein a plurality of voltages are applied across the first and second electrodes at succeeding time steps.
15. A method comprising:
providing a template having a top surface and a bottom surface comprising a plurality of openings extending into the template from the top surface toward the bottom surface;
processing to produce a mixture of semiconducting and metallic carbon nanotubes in the openings of the template;
removing the metallic nanotubes from the mixture of carbon nanotubes;
providing a first electrode to couple to first ends of the carbon nanotubes;
providing a second electrode to couple to second ends of the carbon nanotubes; and
forming a gate electrode on the template.
16. The method of claim 15 wherein the removing the metallic nanotubes comprises:
chemically processing the template with the nanotubes with a solution comprising at least one of an acid, a base, a salt, or an organic chemical.
17. The method of claim 15 wherein the removing the metallic nanotubes comprises:
exposing the template with the nanotubes to at least one of laser radiation, ultraviolet radiation, infrared radiation, electromagnetic radiation, or multiple prongs of radiating energy.
18. The method of claim 15 wherein the removing the metallic nanotubes is performed before forming a gate electrode on the template.
19. The method of claim 15 wherein the removing the metallic nanotubes is performed before providing a first electrode to couple to first ends of the carbon nanotubes.
20. The method of claim 19 wherein the first electrode is a top electrode and the second electrode is a bottom electrode.
21. The method of claim 20 wherein the removing the metallic nanotubes is performed after providing a second electrode to couple to second ends of the carbon nanotubes.
22. The method of claim 20 wherein the removing the metallic nanotubes is also performed before forming a gate electrode on the template.
23. A method comprising:
providing a template having a top surface and a bottom surface comprising a plurality of openings extending into the template from the top surface toward the bottom surface;
processing to produce a mixture of semiconducting and metallic carbon nanotubes in the openings of the template;
providing a first electrode to couple to first ends of the carbon nanotubes;
providing a second electrode to couple to second ends of the carbon nanotubes;
forming a first gate electrode in a first region and a second gate electrode in a second region of the template;
during a first time period, applying voltages to the first gate electrode and the first and second electrode to cause metallic carbon nanotubes associated with the first gate electrode to be destroyed while leaving semiconducting carbon nanotubes associated with the first gate electrode; and
during a second time period, different from the first time period, applying voltages to the second gate electrode and the first and second electrode to cause metallic carbon nanotubes associated with the second gate electrode to be destroyed while leaving semiconducting carbon nanotubes associated with the second gate electrode.
24. The method of claim 23 wherein the steps of
during a first time period, applying voltages to the first gate electrode and the first and second electrode to cause metallic carbon nanotubes associated with the first gate electrode to be destroyed while leaving semiconducting carbon nanotubes associated with the first gate electrode, and
during a second time period, different from the first time period, applying voltages to the second gate electrode and the first and second electrode to cause metallic carbon nanotubes associated with the second gate electrode to be destroyed while leaving semiconducting carbon nanotubes associated with the second gate electrode, are replaced by
starting at a first time, applying voltages to the first gate electrode and the first and second electrode to cause metallic carbon nanotubes associated with the first gate electrode to be destroyed while leaving semiconducting carbon nanotubes associated with the first gate electrode; and
starting at a second time, different from the first time, applying voltages to the second gate electrode and the first and second electrode to cause metallic carbon nanotubes associated with the second gate electrode to be destroyed while leaving semiconducting carbon nanotubes associated with the second gate electrode.
25. A method comprising:
providing a porous structure;
processing to produce a mixture of semiconducting and metallic carbon nanotubes in pores of the porous structure;
providing a first electrode to couple to first ends of the mixture of carbon nanotubes;
providing a second electrode to couple to second ends of the mixture of carbon nanotubes;
forming a first gate electrode interdigitated with a second gate electrode of the porous structure;
applying a first voltage to the first gate electrode and a second voltage across the first and second electrodes to cause metallic carbon nanotubes associated with the first gate electrode to be destroyed while leaving semiconducting carbon nanotubes associated with the first gate electrode; and
applying a third voltage to the second gate electrode to cause metallic carbon nanotubes associated with the second gate electrode to be destroyed while leaving semiconducting carbon nanotubes associated with the second gate electrode.
26. The method of claim 25 wherein the first electrode comprises a serpentine track that traverses through the interdigitated first and second gate electrodes.
27. The method of claim 25 wherein applying a first voltage and applying a third voltage occur at the same time period.
28. A method comprising:
providing a porous structure;
processing to produce a mixture of semiconducting and metallic carbon nanotubes in pores of the porous structure;
using the porous structure with mixture of carbon nanotubes, producing a plurality of transistor devices having source and drain electrodes, coupled to the mixture of carbon nanotubes, and a gate electrode;
during a first time period, removing metallic nanotubes from a first transistor of the transistor devices while leaving semiconducting carbon nanotubes of the first transistor; and
during a second time period, different from the first, removing metallic nanotubes from a second transistor of the transistor devices while leaving semiconducting carbon nanotubes of the second transistor.
29. The method of claim 28 wherein the steps of
during a first time period, removing metallic nanotubes from a first transistor of the transistor devices, and
during a second time period, different from the first, removing metallic nanotubes from a second transistor of the transistor devices, are replaced by
starting at a first time, removing metallic nanotubes from a first transistor of the transistor devices while leaving semiconducting carbon nanotubes of the first transistor; and
starting at a second time, different from the first time, removing metallic nanotubes from a second transistor of the transistor devices while leaving semiconducting carbon nanotubes of the second transistor.
30. The method of claim 28 wherein the plurality of transistor devices is arranged in an array on the porous structure.