Creating high-drive logic devices from standard gates with minimal use of custom masks
View Patent ↗Logic cells in an application-specific integrated circuit (ASIC) emulating standard gate sizing by duplicating elements within a single standard gate where logical high-drive gates are synthesized and converted to parallel elements as a post-process. The drive characteristics of the logical gates are retained during the conversion to the physical gate equivalents in the standard cell architecture. The logic cells in the device may include, for example, at least two two-input multiplexers.
1. A semiconductor device comprising:
a plurality of non-customized layers in which are arranged an array of logic cells, wherein each of at least some of the logic cells in the array includes a first pre-wired logic device and a second pre-wired logic device, the second logic device being functionally equivalent to the first logic device; and
no more than two customized layers, disposed on top of the plurality of non-customized layers, for routing connections, wherein the customized layers configure the first and second pre-wired logic devices into a high-drive logic device, the high-drive logic device being functionally equivalent to each of the first and second logic devices, by connecting the first and second pre-wired logic devices together in parallel.
2. The semiconductor device of claim 1 , wherein the device is an application-specific integrated circuit.
3. The semiconductor device of claim 2 , wherein the first and second pre-wired logic devices are configured into the high-drive logic device using only one customized layer.
4. The semiconductor device of claim 3 , wherein the one customized layer is a customized via layer.
5. The semiconductor device of claim 4 , wherein the first pre-wired logic device is selected from a group consisting of a NAND, a multiplexer, a FLOP, an inverter, an XOR, a NOR, and a look-up table, and the second pre-wired logic device is substantially the same as the first pre-wired logic device.
6. The semiconductor device of claim 5 , wherein the first and second pre-wired logic devices are each a multiplexer having a D0 input, a D1 input, a SEL input, and a Z output, and wherein the first and second pre-wired logic devices are configured, using the customized via layer, to be connected to a common D0 input, a common D1 input, a common SEL input, and a common Z output.
7. The semiconductor device of claim 2 , wherein the customized layers include two customized via layers.
8. The semiconductor device of claim 2 , wherein the customized layers include one customized via layer and one customized metal layer.
9. The semiconductor device of claim 2 , wherein the customized layers include two customized metal layers.
10. The semiconductor device of claim 2 , wherein the array of logic cells are fabricated in a first process geometry, and wherein the customized layers are fabricated in a second process geometry.
11. A method of making a semiconductor device, the method comprising:
forming a plurality of non-customized layers in which are arranged an array of logic cells, wherein each of at least some of the logic cells in the array includes a first pre-wired logic device and a second pre-wired logic device, the second logic device being functionally equivalent to the first logic device; and
forming no more than two customized layers, for routing connections, on top of the plurality of non-customized layers, the step of forming the customized layers including:
producing a respective customized mask for each customized layer, the customized masks for configuring the first and second pre-wired logic devices into a high-drive logic device, the high-drive logic device being functionally equivalent to each of the first and second logic devices, by connecting the first and second pre-wired logic devices together in parallel, and
forming each of the no more than two customized layers using the respective customized mask.
12. The method of claim 11 , wherein the device is an application-specific integrated circuit.
13. The method of claim 12 , wherein only one customized mask is produced and wherein only one customized layer is formed, using the one customized mask, to configure the first and second pre-wired logic devices into the high-drive logic device that is functionally equivalent to each of the first and second logic devices.
14. The method of claim 13 , wherein the customized mask that is produced is a customized via layer, and wherein forming the customized via layer includes forming connections between routing tracks in non-customized layers.
15. The method of claim 14 , wherein forming the plurality of non-customized layers includes:
selecting the first pre-wired logic device from a group consisting of a NAND, a multiplexer, a FLOP, an inverter, an XOR, a NOR, and a look-up table, and
selecting the second pre-wired logic device to be the same type of device as the first logic device.
16. The method of claim 15 , wherein each of the first and second pre-wired logic devices is a multiplexer having a D0 input, a D1 input, a SEL input, and a Z output, and wherein forming the customized via layer includes connecting the first and second pre-wired logic devices to a common D0 input, a common D1 input, a common SEL input, and a common Z output.
17. The method of claim 12 , wherein forming no more than two customized layers includes forming two customized via layers.
18. The method of claim 12 , wherein forming no more than two customized layers includes forming one customized via layer and one customized metal layer.
19. The method of claim 12 , wherein forming no more than two customized layers includes forming two customized metal layers.
20. The method of claim 12 , wherein forming the plurality of non-customized layers includes fabricating the plurality of non-customized layers in a first process geometry, and wherein forming the no more than two customized layers includes fabricating the no more than two customized layers in a second process geometry.
21. A semiconductor chip, comprising an array of logic cells, arranged in a plurality of non-customized layers, that are disposed to receive configurable metal, at least some of the logic cells in the array including a first pre-wired logic device and a second pre-wired logic device, the second logic device being functionally equivalent to the first logic device, wherein the first and second pre-wired logic devices in each logic cell can be selectively connected together in parallel to form a high-drive logic device, functionally equivalent to each of the first and second logic devices, by routing in no more than two customized layers in the configurable metal.
22. The semiconductor chip of claim 21 , wherein the chip is part of an application-specific integrated circuit.
23. The semiconductor chip of claim 22 , wherein the first and second pre-wired logic devices can be selectively connected together in parallel to form a high-drive logic device using only one customized layer.
24. The semiconductor chip of claim 23 , wherein the first and second pre-wired logic devices can be selectively connected together in parallel to form the high-drive logic device using only one customized layer, the one customized layer being a via layer.
25. The semiconductor chip of claim 24 , wherein the first pre-wired logic device is selected from a group consisting of a NAND, a multiplexer, a FLOP, an inverter, an XOR, a NOR, and a look-up table, and the second pre-wired logic device is substantially the same as the first pre-wired logic device.
26. The semiconductor chip of claim 25 , wherein the first and second pre-wired logic devices are each a multiplexer having a D0 input, a D1 input, a SEL input, and a Z output, and wherein the first and second pre-wired logic devices can be selectively connected together in parallel, using the customized via layer, such that the first and second pre-wired logic devices are connected to a common D0 input, a common D1 input, a common SEL input, and a common Z output.
27. The semiconductor chip of claim 22 , wherein the first and second pre-wired logic devices can be selectively connected together in parallel to form a high-drive logic device using only two customized via layers.
28. The semiconductor chip of claim 22 , wherein the first and second pre-wired logic devices can be selectively connected together in parallel to form a high-drive logic device using only one customized via layer and one customized metal layer.
29. The semiconductor chip of claim 22 , wherein the first and second pre-wired logic devices can be selectively connected together in parallel to form a high-drive logic device using only two customized metal layers.
30. The semiconductor chip of claim 22 , wherein the array of logic cells is fabricated in a first process geometry, and wherein the configurable metal of the customized layers can be fabricated in a second process geometry.