CMOS image sensors including pickup regions
A CMOS image sensor includes a field isolation film defining first, second, and third active fields in a substrate having a first conductivity type, a photodiode region in the first active field, the photodiode region having a second conductivity type opposite the first conductivity type, and a floating diffusion region of the second conductivity type in the second active field. A source follower gate is conductively connected with the floating diffusion region and intersects the second active field. First and second source/drain regions of the second conductivity type are provided in the second active field at opposite sides of the source follower gate, and a pickup region is disposed in the third active field. The third active field may be adjacent a portion of the second active field where the first source/drain region or the second source/drain region is located, and the floating diffusion region may be isolated from the first and second source/drain regions.
1. A CMOS image sensor, comprising:
a field isolation film defining first, second, and third active fields in a substrate having a first conductivity type;
a photodiode region in the first active field, the photodiode region having a second conductivity type opposite the first conductivity type;
a floating diffusion region of the second conductivity type in the second active field;
a source follower gate conductively connected with the floating diffusion region and intersecting the second active field;
a first source/drain region of the second conductivity type in the second active field at one side of the source follower gate, the first source/drain region being supplied with a power source voltage;
a second source/drain region of the second conductivity type in the second active field at an opposite side of the source follower gate from the first source/drain region, the second source/drain region being spaced from the first source/drain region, and
a pickup region in the third active field, the pickup region configured to discharge excess charges generated by hot carriers in a source follower transistor defined by the source follower gate,
wherein the third active field is protruded from at least one side of the second active field where the first source/drain region or the second source/drain region is located.
2. The CMOS image sensor of claim 1 , wherein the pickup region is doped with impurities of the first conductivity type.
3. The CMOS image sensor of claim 2 , wherein the first conductivity type is P-type and the second conductivity type is N-type, and the pickup region is coupled to a ground voltage.
4. The CMOS image sensor of claim 2 , wherein the pickup region comprises a first pickup region, the CMOS image sensor further comprising:
a fourth active field defined by the field isolation film adjacent a side of the second active field where the first source/drain region or the second source/drain region is located; and
a second pickup region in the fourth active field,
wherein the second pickup region is doped with impurities of the second conductivity type and is isolated from the first and second source/drain regions.
5. The CMOS image sensor of claim 4 , wherein the first conductivity type is P-type and the second conductivity type is N-type, the first pickup region is coupled to a ground voltage, and the second pickup region is coupled to a power supply voltage.
6. The CMOS image sensor of claim 1 , wherein the pickup region is doped with impurities of the second conductivity type.
7. The CMOS image sensor of claim 6 , wherein the first conductivity is P-type, the second conductivity is N-type, and the pickup region is supplied with a power supply voltage.
8. The CMOS image sensor of claim 1 , further comprising:
a transfer gate intersecting the second active field between the photodiode region and the floating diffusion region; and
a reset gate intersecting the second active field between the floating diffusion region and the first source/drain region.
9. The CMOS image sensor of claim 8 , further comprising a gate insulation film interposed between the transfer gate and the substrate, the reset gate and the substrate, and the source follower gate and the substrate.
10. The CMOS image sensor of claim 1 , wherein the pickup region is isolated from the first and second source/drain regions.
11. A CMOS image sensor, comprising:
a filed isolation film defining first, second, and third active fields in a substrate Having a first conductivity type;
a photodiode region in the first active field, the photodiode region having a second Conductivity tpe;
a floating diffusion region of the second conductivity type in the second active field;
a source follower gate conductively connected with the floating diffusion region and Intersecting the second active field;
first and second source/drain regions of the second conductivity type in the third active field, the pickup region configured to discharge excess charges generated by hot carriers in a source follower transistor defined by the source follower gate,
wherein the third active field is protruded from a side of the second active field where the source/drain region or the second source/drain region is located.
12. The CMOS image sensor of claim 11 , wherein the first conductivity type is P-type and the second conductivity type is N-type, and the pickup region is coupled to a ground voltage.
13. A CMOS image sensor, comprising:
a field isolation film defining first, second, and third active fields in a substrate having a first conductivity type;
a photodiode region in the first active field, the photodiode region having a second conductivity type opposite the first conductivity type;
a floating diffusion region of the second conductivity type in the second active field;
a source follower gate conductively connected with the floating diffusion region and intersecting the second active field;
first and second source/drain regions of the second conductivity type in the second active field at opposite sides of the source follower gate; and
a pickup region doped with impurities of the first conductivity type in the third active field, the pickup region configured to discharge excess charges generated by hot carriers in a source follower transistor defined by the source follower gate,
wherein the third active field is protruded from a side of the second active field where the first source/drain region or the second source/drain region is located.
14. The CMOS image sensor of claim 13 , wherein the first conductivity is P-type, the second conductivity is N-type, and the pickup region is supplied with a power supply voltage.