Electron-beam exposure system
View Patent ↗An electron-beam exposure system includes: density-per-area map generating means configured to divide a certain area on which an electron beam is irradiated into meshes, to figure out a ratio of an area of patterns to be irradiated on each divided region to an area of the divided region, thus to generate a density-per-area map; and proximity-effect correcting means configured to correct exposure of the electron beam by referring to the density-per-area map. The proximity-effect correcting means includes: product-sum arithmetic means which is configured to perform product-sum arithmetic on two-dimensional array data, and addition means which is configured to perform addition arithmetic on the two-dimensional array data; stores, in a first memory, two-dimensional array data on the density per area of the patterns; performs the product-sum arithmetic and the addition a predetermined number of times, and thus calculates the two-dimensional array data on the density per area by a linear conversion; and uses the resultant data as two-dimensional array data on exposure to be used for correcting a proximity effect.
1. An electron-beam exposure system comprising:
density-per-area map generating means configured to divide a certain area on which an electron beam is irradiated into meshes, to figure out a ratio of an area of patterns to be irradiated on each divided region to an area of the divided region, thus to generate a density-per-area map; and
proximity-effect correcting means configured to correct exposure of the electron beam by referring to the density-per-area map,
wherein the proximity-effect correcting means includes product-sum arithmetic means which is configured to perform product-sum arithmetic on two-dimensional array data, and addition means which is configured to perform addition arithmetic on the two-dimensional array data,
the proximity-effect correcting means stores, in a first memory, two-dimensional array data on a density per area of patterns included in each of the meshes, performs the product-sum arithmetic and the addition a predetermined number of times, and thus calculates the two-dimensional array data on the density per area by a linear conversion, subsequently storing, in a second memory, the resultant data as two-dimensional array data of data on exposure to be used for correcting a proximity effect.
2. The electron-beam exposure system according to claim 1 , wherein, when performing the linear conversion from a first two-dimensional array data to a second two-dimensional array data, the product-sum arithmetic means assigns a weight to data on peripheries respectively of the meshes of the first two-dimensional array data, and thus performs addition.
3. The electron-beam exposure system according to claim 2 , wherein the weight to be assigned to the data on the peripheries is a value of a Gaussian distribution indicating how much a region of the peripheries is influential on the meshes.
4. The electron-beam exposure system according to claim 1 , wherein the product-sum arithmetic means performs a convolution integral on data on meshes neighboring each of the meshes in a X direction and a value of a Gaussian distribution, and performs a convolution integral on data on meshes neighboring each of the meshes in a Y direction and the value of the Gaussian distribution.
5. The electron-beam exposure system according to claim 1 , wherein in the product-sum arithmetic means, a maximum value of an absolute value of a second two-dimensional array data obtained by inputting a first two-dimensional array data is smaller than a maximum value of an absolute value of the first two-dimensional array data.
6. The electron-beam exposure system according to claim 1 , wherein the addition means assigns predetermined weights respectively to components of two sets of two-dimensional data, and thus adds up the resultant components.
7. The electron-beam exposure system according to claim 1 , wherein the product-sum arithmetic and the addition are performed by a shader.
8. The electron-beam exposure system according to any one of claims 1 to 7 , wherein electron-beam exposure is performed based on data on exposure which is obtained by the proximity-effect correcting means.