Semiconductor memory device and manufacturing method thereof

1. A semiconductor memory device comprising:

an interposer chip that has a plurality of first internal electrodes formed on a first surface, a plurality of second internal electrodes formed on a second surface opposite to the first surface, a plurality of third internal electrodes formed on the second surface and arranged in a pitch, which is larger than a pitch of the second internal electrodes; and

a plurality of core chips that are mounted directly upon each other, and further being mounted on the first surface of the interposer chip and are connected to the first internal electrodes, wherein

the interposer chip includes a semiconductor substrate, a re-wiring layer formed on at least one surface of the semiconductor substrate, a plurality of first through electrodes formed in the semiconductor substrate and connecting a part of the first internal electrodes to a part of the second internal electrodes, and a plurality of second through electrodes formed in the semiconductor substrate and connecting a remaining part of the first internal electrodes to a part of the third internal electrodes, and

a pitch of the first through electrodes is substantially equal at least to the pitch of the first internal electrodes or to the pitch of the second internal electrodes.

2. The semiconductor memory device as claimed in claim 1 , wherein the pitch of the first through electrodes is substantially equal to both the pitch of the first internal electrodes and the pitch of the second internal electrodes.

3. The semiconductor memory device as claimed in claim 1 , wherein a remaining part of the second internal electrodes and a remaining part of the third internal electrodes are connected via the re-wiring layer of the interposer chip.

4. The semiconductor memory device as claimed in claim 1 , wherein the first through electrodes are used to transfer signals, and the second through electrodes are used to supply power.

5. The semiconductor memory device as claimed in claim 1 , wherein a plurality of third through electrodes are provided for the core chips, respectively, and the core chips are connected to the part of the second internal electrodes via the first and the third through electrodes.

6. The semiconductor memory device as claimed in claim 5 , wherein the pitch of the first through electrodes is substantially equal to a pitch of the third through electrodes.

7. The semiconductor memory device as claimed in claim 1 , wherein the part of the first internal electrodes is substantially aligned with the first through electrodes as viewed in a vertical direction.

8. The semiconductor memory device as claimed in claim 1 , wherein the part of the second internal electrodes is substantially aligned with the first through electrodes as viewed in a vertical direction.

9. The semiconductor memory device as claimed in claim 1 , further comprising an encapsulating resin layer that is provided on the first surface of the interposer chip and molds the core chips.

10. The semiconductor memory device as claimed in claim 1 , further comprising external electrodes that are formed on the third internal electrodes, respectively.

11. The semiconductor memory device as claimed in claim 1 , further comprising an interface chip that is mounted on the second surface of the interposer chip and is connected to the second internal electrodes.

12. A semiconductor device comprising:

an interposer that has a plurality of first internal electrodes formed on a first surface and including a set of first electrodes and a set of second electrodes, a plurality of second internal electrodes formed on a second surface opposite to the first surface and arranged in a first pitch, a plurality of third internal electrodes formed on the second surface and arranged in a second pitch which is larger than the first pitch, a plurality of first conductive paths each connecting one of the first electrodes to an associated one of the second internal electrodes, and a plurality of second conductive paths each connecting one of the second electrodes to an associated one of the third internal electrodes; and

a core chip that is mounted over the first surface of the interposer and has a plurality of internal terminals including a set of first terminals and a set of second terminals, each of the first terminal electrodes being connected to an associated one of the first electrodes of the first internal electrodes, and each of the second terminals being connected to an associated one of the second electrodes of the first internal electrodes and

an interface chip that is mounted over the second surface of the interposer and has a plurality of internal terminals connected respectively to the second internal electrodes of the interposer.

13. The device as claimed in claim 12 , wherein each of the first conductive paths includes a first through electrode that penetrates the interposer to connect one of the first electrodes to an associated one of the second internal electrodes, and each of the second conductive paths includes a second through electrode penetrating the interposer to connect one of the second electrodes to an associated one of the third internal electrodes.

14. The device as claimed in claim 13 , wherein the first internal electrodes are arranged in a third pitch and the first through electrodes included in the first conductive paths are arranged in a fourth pitch that is substantially equal to at least one of the first and third pitches.

15. The device as claimed in claim 12 , wherein the core chip is a first core chip and the device further comprises at least one second core chip, the first and second core chip are stacked with each other over the first surface of the interposer.

16. The device as claimed in claim 12 , wherein the interface chip further has at least one additional internal terminal and the interposer further having at least one third conductive path connecting the at least one additional internal terminal to an associated one of the third internal electrodes.