Global signal driver for individually adjusting driving strength of each memory bank

1. A global signal driving device, comprising:

a driving control unit configured to generate a plurality of driving control signals based on a bank address;

a driving unit including a plurality of driving sectors to adjust a driving strength of the driving unit in response to the driving control signals, thereby selectively driving the global signal to a plurality of banks, wherein the driving strength is adjusted by activating one or more driving sectors in response to the driving control signals; and

wherein the driving control unit generates the driving control signals differently according to a transmission load of a global signal line through which the global signal is transferred to the banks.

2. The global signal driving device as recited in claim 1 , wherein the transmission load is determined by a distance to the plurality of banks or a resistance of the global signal line.

3. The global signal driving device as recited in claim 1 , wherein the global signal includes one of a data signal, an address signal and a command signal.

4. The global signal driving device as recited in claim 1 , wherein the driving unit drives the global signal with a first driving strength for a first transmission distance of the global signal and drives the global signal with a second driving strength which is larger than the first driving strength transmission distance of the global signal that is greater than the first transmission distance.

5. The global signal driving device as recited in claim 1 , wherein the driving control unit includes:

an inverting unit for inverting the bank address;

a plurality of first NAND gates for generating a plurality of bank selection signals by performing a logic NAND operation to an output of the inverting unit and the bank address; and

a plurality of second NAND gates for generating the plurality of driving control signals by performing a logic NAND operation to the plurality of bank selection signals.

6. The global signal driving device as recited in claim 1 , wherein the driving unit includes:

an inverter for inverting the global signal;

a plurality of transfer gates for selectively output an output of the inverter by being selectively turned on according to the plurality of driving control signals; and

the plurality of driving sectors for outputting the global signal as a different voltage value according to an output of the plurality of transfer gates.

7. The global signal driving device as recited in claim 6 , wherein each of the plurality of driving sectors includes:

a PMOS transistor; and

an NMOS transistor,

wherein a plurality of PMOS transistors of the driving sectors are connected in parallel to a power supply voltage gates of the plurality of PMOS transistors being selectively connected to output terminals of the plurality of transfer gates; and

a plurality of NMOS transistors of the driving sectors are connected in parallel to a ground voltage gates of the plurality of NMOS transistors being selectively connected to the output terminals of the plurality of transfer gates.

8. The global signal driving device as recited in claim 7 , wherein the number of the plurality of transfer gates is equal to the number of the plurality of PMOS transistors.

9. The global signal driving device as recited in claim 7 , wherein the number of the plurality of transfer gates is equal to the number of the plurality of NMOS transistors.

10. The global signal driving device as recited in claim 7 , wherein the gates of the plurality of PMOS transistors are connected to the gates of the plurality of NMOS transistors.

11. The global signal driving device as recited in claim 7 , wherein the plurality of transfer gates includes:

a first transfer gate whose output terminal is coupled to the gates of a first number of the plurality of PMOS transistors;

a second transfer gate whose output terminal is coupled to the gates of a second number of the plurality of PMOS transistors, wherein the second number of the plurality of PMOS transistors is less than the first number of PMOS transistors;

a third transfer gate whose output terminal is coupled to the gates of a third number of the plurality of PMOS transistors, wherein the third number of the plurality of PMOS transistors is less than the second number of PMOS transistors; and

a fourth transfer gate whose output terminal is coupled to the gates of a fourth number of the plurality of PMOS transistors, wherein the fourth number of the plurality of PMOS transistors is less than the third number of PMOS transistors.

12. The global signal driving device as recited in claim 7 , wherein the plurality of transfer gates includes:

a fifth transfer gate whose output terminal is coupled to the gates of a first number of the plurality of NMOS transistors;

a sixth transfer gate whose output terminal is coupled to the gates of a second number of the plurality of NMOS transistors, wherein the second number of the plurality of NMOS transistors is less than the first number of NMOS transistors fifth transfer gate;

a seventh transfer gate whose output terminal is coupled to the gates of a third number of the plurality of NMOS transistors, wherein the third number of the plurality of NMOS transistors is less than the second number of NMOS transistors; and

an eighth transfer gate whose output terminal is coupled to the gates of a fourth number of the plurality of NMOS transistors, wherein the fourth number of the plurality of NMOS transistors is less than the third number of NMOS transistors.

13. The global signal driving device as recited in claim 7 , wherein the plurality of driving sectors activates all of the plurality of PMOS transistors and the plurality of NMOS transistors when a first driving signal is activated and activates one of the plurality of PMOS transistors and one of the plurality of NMOS transistors when a second driving signal is activated.

14. The global signal driving device as recited in claim 7 , the plurality of PMOS transistors and the plurality of NMOS transistors have different sizes.

15. The global signal driving device as recited in claim 11 , wherein the fourth number is one.

16. The global signal driving device as recited in claim 12 , wherein the fourth number is one.