Semiconductor device with a super-junction
View Patent ↗A semiconductor device has a semiconductor substrate, and a parallel p-n layer provided between the main surface and the back surface of the semiconductor substrate, and first-conductivity-type drift region and second-conductivity-type partition regions alternately arranged therein, wherein in the parallel p-n layer, the second-conductivity-type partition regions are periodically formed conforming to a basic periodicity specified by a predetermined distance, and S A /S (where, S A is a sectional area per a single second-conductivity-type partition region as viewed in a plane parallel with the main surface, and S is a sectional area of a unit structural region, periodically formed as containing one of the second-conductivity-type partition regions, as viewed in a plane parallel with the main surface) in an element-forming region allowing current to flow therethrough is smaller than S A /S in at least a portion of a periphery region surrounding the element-forming region.
1. A semiconductor device comprising:
a semiconductor substrate;
a first-conductivity-type drift region formed in said semiconductor substrate;
a plurality of second conductivity type base regions formed in an upper part of said first-conductivity-type drift region; and
a plurality of second-conductivity-type partition regions formed beneath said second-conductivity-type base region and arranged in said first-conductivity-type drift region,
said second-conductivity-type partition regions being periodically formed in said first-conductivity-type drift region at a specified distance, and
S A /S (where, S A is a sectional area per a single second-conductivity-type partition region as viewed in a plane parallel with said/ main surface, and S is a sectional area of a unit structural region, periodically formed as containing one of said second-conductivity-type partition regions, as viewed in a plane parallel with said main surface) in an element-forming region allowing current to flow therethrough is smaller than S A /S in at least a portion of a periphery region surrounding said element-forming region,
wherein each of said second-conductivity-type partition regions has a columnar form, aligned in the thickness-wise direction of said semiconductor substrate, and two-dimensionally arranged in a plan view, and
wherein said second-conductivity-type partition regions are provided as being arranged according to a rhombic lattice pattern in a plan view.
2. The semiconductor device according to claim 1 , wherein all values of S A /S in the entire portion of said periphery region is larger than S A /S in said element-forming region.
3. The semiconductor device according to claim 1 , wherein said periphery region has a field oxide film provided in a portion thereof, and S A /S in a region below said field oxide film is larger than S A /S in said element-forming region.
4. A semiconductor device comprising:
a semiconductor substrate, said substrate comprising a first-conductivity-type layer and a continuous doped epitaxial layer of said first-conductivity-type formed over said first-conductivity-type layer;
a drift region of said first-conductivity-type formed in said semiconductor substrate;
a plurality of second conductivity type base regions formed in an upper part of said first-conductivity-type drift region; and
a plurality of second-conductivity-type partition regions formed beneath said second-conductivity-type base region and arranged in said first-conductivity-type drift region,
said second-conductivity-type partition regions being periodically formed in said first-conductivity-type drift region at a specified distance, and
S A /S (where, S A is a sectional area per a single second-conductivity-type partition region as viewed in a plane parallel with said main surface, and S is a sectional area of a unit structural region, periodically formed as containing one of said second-conductivity-type partition regions, as viewed in a plane parallel with said main surface) in an element-forming region allowing current to flow therethrough is smaller than S A /S in at least a portion of a periphery region surrounding said element-forming region,
wherein said second-conductivity-type partition regions extend only part way into said drift region without contacting said first-conductivity-type layer.
5. The semiconductor device according to claim 4 , wherein each of said second-conductivity-type partition regions has a columnar form, aligned in the thickness-wise direction of said semiconductor substrate, and two-dimensionally arranged in a plan view.
6. The semiconductor device according to claim 4 , wherein said second-conductivity-type partition regions are provided as being arranged according to a rhombic lattice pattern in a plan view.
7. The semiconductor device according to claim 4 , wherein all values of S A /S in the entire portion of said periphery region is larger than S A /S in said element-forming region.
8. The semiconductor device according to claim 4 , wherein said periphery region has a field oxide film provided in a portion thereof, and
S A /S in a region below said field oxide film is larger than S A /S in said element-forming region.