Heating element CVD system and heating element CVD metod using the same
A heating element CVD system and a heating element CVD method which are capable of forming a high quality polycrystalline silicon film (polysilicon film) as a device in the case of producing a silicon film by using a heating element CVD system. The heating element CVD system and the heating element CVD method heat and maintain the inner surface of the structure surrounding the space between the substrate holder and the heating element to be at least 200° C. or higher, preferably at least 350° C. or higher during the formation of the silicon film on the substrate.
1 . A heating element CVD system comprising:
a processing chamber having a substrate holder disposed therein for holding a substrate, said processing chamber being operable to apply a predetermined process to the substrate held by said substrate holder;
an evacuating system connected with said processing chamber, said evacuating system being operable to evacuate the inside of said processing chamber to vacuum said processing chamber;
a material gas supplying system operable to supply a predetermined material gas into said processing chamber;
a power supply mechanism operable to supply electric power;
a heating element disposed in said processing chamber, said heating element being operable to receive the electric power supplied from said power supply mechanism so as to be maintained at a high temperature, and to, by being maintained at a high temperature, heat the material gas introduced from said material gas supplying system into said processing chamber so as to form a thin film on the substrate held by said substrate holder by at least one of a decomposition and activation of the introduced material gas on a surface of said heating element; and
a structure surrounding the space between said substrate holder and said heating element, wherein an inner surface of said structure is heated during the formation of the thin film on the substrate.
2 . A heating element CVD system according to claim 1 , wherein said structure surrounding the space between said substrate holder and said heating element is a heating jig which surrounds the space between said substrate holder and said heating element and which is disposed inside of the inner wall of said processing chamber, and
wherein heating of the inner surface of said structure is carried out by a heating mechanism stored in said heating jig.
3 . A heating element CVD system according to claim 1 , wherein said structure surrounding the space between said substrate holder and said heating element is the inner wall of said processing chamber, and
wherein heating of the inner surface of said structure is carried out by a heating mechanism stored in the inner wall of said processing chamber.
4 . A heating element CVD system according to claim 1 , wherein heating is carried out so as to heat and maintain the inner surface of said structure to at least 200° C.
5 . A heating element CVD system according to claim 1 , wherein heating is carried out so as to heat and maintain the inner surface of said structure to at least 350° C.
6 . A heating element CVD system according to claim 1 , wherein the thin film formed on the substrate is a silicon film.
7 . A heating element CVD system according to claim 6 , wherein the material gas introduced into said processing chamber for forming the silicon film is a mixture of silane and hydrogen.
8 . A heating element CVD system according to claim 1 , wherein the thin film on the substrate is a silicon carbide film.
9 . A heating element CVD system according to claim 8 , wherein the material gas introduced into said processing chamber for forming the silicon carbide film is a mixture of silane and hydrogen and at least one selected from the group consisting of methane, acetylene and ethane.
10 . A heating element CVD system according to claim 1 , wherein the thin film formed on the substrate is a silicon germanium film.
11 . A heating element CVD system according to claim 10 , wherein the material gas introduced into said processing chamber for forming the silicon germanium film is a mixture of silane, germane and hydrogen.