Vertical GaN-based LED and method of manufacturing the same

1. A vertical GaN-based light emitting diode (LED) comprising:

an n-electrode;

an AlGaN layer formed under the n-electrode;

an undoped GaN layer formed under the AlGaN layer to provide a two-dimensional electron gas (2DEG) layer to a junction interface of the AlGaN layer;

a GaN-based LED structure including an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer;

a p-electrode formed under the GaN-based LED structure; and

a conductive substrate formed under the p-electrode.

2. The vertical GaN-based LED according to claim 1 ,

wherein the surface of the AlGaN layer contacting the n-electrode has a Ga-face structure in which nitrogen (N) elements are disposed on a vertical uppermost layer of gallium elements.

3. The vertical GaN-based LED according to claim 1 ,

further comprising a conductive junction layer formed on the p-electrode or at an interface between the p-electrode and the conductive substrate.

4. The vertical GaN-based LED according to claim 1 ,

further comprising a reflective layer formed under the p-electrode.

5. The vertical GaN-based LED according to claim 1 ,

wherein the undoped GaN layer has a thickness of 50-500 Å.

6. The vertical GaN-based LED according to claim 1 ,

wherein the AlGaN layer has an Al content of 10-50%.

7. The vertical GaN-based LED according to claim 1 ,

wherein the AlGaN layer has a thickness of 50-500 Å.

8. The vertical GaN-based LED according to claim 1 ,

wherein the AlGaN layer is an undoped AlGaN layer.

9. The vertical GaN-based LED according to claim 1 ,

wherein the AlGaN layer is a doped AlGaN layer doped with n-type impurities.

10. The vertical GaN-based LED according to claim 1 ,

wherein the AlGaN layer is doped with silicon impurities or oxygen impurities.