Patent Assignment
Reel/Frame 024375/0448
Assignment of Assignor's Interest
Recorded: 2010-05-12
Pages: 4
Assignor
SAMSUNG ELECTRO-MECHANICS CO., LTD.
Executed: 2010-05-11
Assignee
SAMSUNG LED CO., LTD.
314 MAETAN 3-DONG, YEONGTONG-GU, SUWON,, GYUNGGI-DO, 443-743, KOREA, REPUBLIC OF
Covered Properties
(66)
Method of Manufacturing a Vertically-Structured Gan-Based Light Emitting Diode
Vertical Gan-Based Led and Method of Manufacturing the Same
Vertical Gan-Based Led and Method of Manfacturing the Same
Method of Manufacturing Vertical Gan-Based Light Emitting Diode
Nitride Semiconductor Light Emitting Device Including Electrodes of a Multilayer Structure
Nitride Based Semiconductor Light Emitting Diode
Nitride-Based Semiconductor Light Emitting Diode and Method of Manufacturing the Same
Vertical Gallium-Nitride Based Light Emitting Diode
Nitride-Based Semiconductor Light Emitting Diode
Vertical Gallium Nitride Based Light Emitting Diode with Multiple Electrode Branches
Method of Manufacturing Vertical Gallium Nitride Based Light Emitting Diode
Vertical Gallium-Nitride Based Light Emitting Diode
Light emitting diode module
Application:
11/644,951 →
Publication:
US 2007/0194398
Method of manufacturing gallium nitride based light emitting diode
Application:
11/646,406 →
Publication:
US 2007/0184568
Gallium Nitride Based Light Emitting Diode
Nitride-Based Semiconductor Light Emitting Device
Method of Forming Surface Irregularities and Method of Manufacturing Gallium Nitride-Based Light Emitting Diode
Light emitting transistor having light emitting layer
Application:
11/808,158 →
Publication:
US 2007/0284616
Light Emitting Diode Package and Method of Manufacturing the Same
Gallium Nitride-Based Light Emitting Diode and Method of Manufacturing the Same
Vertical Gan-Based Led and Method of Manufacturing the Same
Light Emitting Transistor
Method of Manufacturing Nitride-Based Semiconductor Light Emitting Diode
Vertical Light Emitting Diode and Method of Manufacturing the Same
Method of Manufacturing a Vertically-Structured Gan-Based Light Emitting Diode
White Light Emitting Diode with Yellow, Green and Red Light Emitting Phosphor
Nitride Semiconductor Light Emitting Diode
Light Emitting Diode Light Source
Light Emitting Diode Package with a Phosphor Substrate
Backlight Unit and Method of Driving the Same Controlling Temperature of the Backlight Unit
High-power light emitting diode and method of manufacturing the same
Application:
12/003,275 →
Publication:
US 2008/0224160
Nitride-Based Semiconductor Light Emitting Diode
White Light Emitting Diode and Method of Manufacturing the Same
Method of Manufacturing Substrate for Forming Device, and Method of Manufacturing Nitride-Based Semiconductor Laser Diode
Backlight Unit and Liquid Crystal Display Device Having the Same
White Light Emitting Diode and Method of Manufacturing the Same
Light Emitting Diode Package
Method of Isolating Semiconductor Laser Diodes
Led Illumination Device and Radiating Member of Led Illumination Device
Light Emitting Diode Module for Lighting
Nitride-Based Semiconductor Light Emitting Diode
White light emitting diode and lighting apparatus using the same
Application:
12/155,276 →
Publication:
US 2009/0250714
Method of Manufacturing Vertical Light Emitting Diode
White Light Emitting Diode
Led Package and Method of Manufacturing the Same
Application:
12/164,685 →
Publication:
US 2009/0294793
Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof
Light Emitting Diode Package
Spread Lens with Refraction Parts, and Lighting Device
Method of Manufacturing Led Package for Formation of Molding Member
Light Emitting Diode Package Including a Lead Frame with a Cavity
Gan Type Light Emitting Diode Device and Method of Manufacturing the Same
Application:
12/207,615 →
Publication:
US 2009/0085052
Two-Sided Illumination Led Lens and Led Module and Led Two-Sided Illumination System Using the Same
Light Emitting Device Package and Method of Manufacturing the Same
Light Emitting Diode Package and Method of Manufacturing the Same
Illumination System
Application:
12/240,181 →
Publication:
US 2010/0039821
Led Package
Backlight Unit
Vertical Nitride-Based Light Emitting Diode Having Ohmic Contact Pattern and Method of Manufacturing the Same
Application:
12/328,142 →
Publication:
US 2010/0090246
Light Emitting Diode Module
Backlight Unit
Patent:
7,632,002 →
Application:
12/338,350 →
Light Emitting Diode Package and Manufacturing Method Thereof
Method of Manufacturing Vertical Gallium-Nitride Based Light Emitting Diode
Semiconductor Light Emitting Device Including Substrate Having Protection Layers and Method for Manufacturing the Same
Vertical Light Emitting Diode and Method of Manufacturing the Same
Method of Manufacturing Gallium Nitride Based Light Emitting Diode Having Surface Irregularities
Application:
12/490,891 →
Publication:
US 2009/0258454
Light Emitting Diode Module
Application:
12/642,122 →
Publication:
US 2010/0096661
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.