Method of manufacturing vertical GaN-based light emitting diode

1. A method of manufacturing a vertical GaN-based LED (light emitting diode) device, the method comprising:

forming an insulating pattern on a substrate to define LED regions having a predetermined size;

sequentially stacking an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer on the substrate except for the insulating pattern to form a light emitting structure;

removing the insulating pattern to divide the light emitting structure into LED sections having a predetermined size;

forming p-electrodes on the LED sections, respectively;

forming a structure support layer on the p-electrodes;

removing the substrate to expose the n-type GaN-based semiconductor layer; and

forming n-electrodes on the exposed n-type GaN-based semiconductor layer.

2. The method according to claim 1 ,

wherein the insulating pattern is formed of silicon oxide or nitride oxide.

3. The method according to claim 1 ,

wherein the removing of the insulating pattern is performed by wet etching.

4. The method according to claim 1 ,

wherein the insulating pattern is lower than the n-type GaN-based semiconductor layer.

5. The method according to claim 4 ,

wherein the insulating pattern has a height of about 200 nm to 1000 nm.

6. The method according to claim 1 ,

wherein the insulating pattern has a width equal to or smaller than a length and a width of the light emitting structure divided into the LED sections.

7. The method according to claim 1 ,

wherein the light emitting structure is formed by sequentially growing the n-type GaN-based semiconductor layer, the active layer, and the p-type GaN-based semiconductor layer in a MOCVD (metal organic chemical vapor deposition) reactor.

8. The method according to claim 1 ,

further comprising forming a conductive bonding layer on the p-type GaN-based electrodes prior to the forming of the structure support layer.