Method of manufacturing nitride-based semiconductor light emitting diode
View Patent ↗Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.
1. A method of manufacturing a nitride-based semiconductor light emitting diode (LED), the method comprising:
sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate;
forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer;
heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed;
removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer;
mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and
forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.
2. The method according to claim 1 ,
wherein the Pd/Zn alloy layer is formed on the p-type nitride semiconductor layer excluding the region where the p-electrode is formed.
3. The method according to claim 1 ,
wherein the removing of the Pd/Zn alloy layer is performed in such a manner that the concentration of Pd and Zn remaining in the p-type nitride semiconductor layer is maintained at 1×10 16 to 1×10 20 cm −3 , through the heat-treating of the p-type nitride semiconductor layer.
4. The method according to claim 3 ,
wherein Pd and Zn remaining in the p-type nitride semiconductor layer are positioned in the range of 2 to 100 nm from the upper surface of the p-type nitride semiconductor layer.
5. The method according to claim 1 ,
wherein the removing of the Pd/Zn alloy layer is performed in such a manner that the surface roughness of the p-type nitride semiconductor layer coming in contact with the Pd/Zn alloy layer is maintained at 0.5 to 10 nm.
6. The method according to claim 1 further comprising:
forming a transparent electrode layer on the p-type nitride semiconductor layer, after the removing of the Pd/Zn alloy layer.
7. The method according to claim 6 ,
wherein the transparent electrode layer is formed of a mixture obtained by adding one or more elements, selected from the group consisting of Sn, Zn, Mg, Cu, Ag, and Al, into indium oxide.
8. A method of manufacturing a nitride-based semiconductor LED, the method comprising:
sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate;
forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer;
heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed;
mesa-etching portions of the Pd/Zn alloy layer, the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and
forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.
9. The method according to claim 8 ,
wherein the Pd/Zn alloy layer is formed on the p-type nitride semiconductor layer excluding the region where the p-electrode is formed.
10. The method according to claim 8 ,
wherein the heat-treating of the p-type nitride semiconductor layer is performed in such a manner that the concentration of Pd and Zn remaining in the p-type nitride semiconductor layer is maintained at 1×10 16 to 1×10 20 cm −3 .
11. The method according to claim 10 ,
wherein Pd and Zn remaining in the p-type nitride semiconductor layer are positioned in the range of 2 to 100 nm from the upper surface of the p-type nitride semiconductor layer.
12. The method according to claim 8 ,
wherein the heat-treating of the p-type nitride semiconductor layer is performed in such a manner that the surface roughness of the p-type nitride semiconductor layer coming in contact with the Pd/Zn alloy layer is maintained at 0.5 to 10 nm.
13. The method according to claim 8 further comprising:
forming a transparent electrode layer on the p-type nitride semiconductor layer, before the forming of the n-electrode and the p-electrode.
14. The method according to claim 13 ,
wherein the transparent electrode layer is formed of a mixture obtained by adding one or more elements, selected from the group consisting of Sn, Zn, Mg, Cu, Ag, and Al, into indium oxide.