Method of manufacturing vertical gallium-nitride based light emitting diode
View Patent ↗A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.
1. A method of manufacturing a vertical GaN-based LED, comprising:
sequentially forming an undoped GaN layer, a lightly doped n-type GaN layer, an etch stop layer, an n-type GaN layer for an n-type electrode contact, an active layer, and a p-type GaN layer on a sapphire substrate;
forming a p-electrode on the p-type GaN layer;
forming a support layer on the p-electrode;
removing the sapphire substrate using a laser lift-off (LLO) process;
etching the undoped GaN layer and the lightly doped n-type GaN layer;
selectively etching the etch stop layer to expose at least a portion of the n-type GaN layer for the n-type electrode contact; and
forming an n-electrode on the exposed n-type GaN layer for the n-type electrode contact.
2. The method according to claim 1 , wherein the lightly doped n-type GaN layer has a doping concentration of 10 −8 E or less.
3. The method according to claim 1 , wherein the etch stop layer is formed of material having an etching selectivity different from those of the lightly doped n-type GaN layer and the n-type GaN layer for the n-type electrode contact.
4. The method according to claim 3 , wherein the etch stop layer is formed of at least one material selected from the group consisting of group III-V semiconductor compounds, group III-VI semiconductor compounds, and group III-VII semiconductor compounds.
5. The method according to claim 1 , further comprising:
after the selective etching of the etch stop layer, forming the remaining etch stop layer to have an uneven surface.
6. The method according to claim 1 , further comprising:
prior to the formation of the n-type electrode, sequentially forming an n-type transparent electrode and an n-type reflective electrode on the etch stop layer and the n-type GaN layer for the n-type electrode contact.