Nitride-based semiconductor light emitting diode
View Patent ↗Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.
1. A nitride-based semiconductor LED comprising:
a substrate;
a first conductivity type nitride semiconductor layer formed on the substrate;
an active layer formed on a predetermined region of the first conductivity type nitride semiconductor layer;
a second conductivity type nitride semiconductor layer formed on the active layer;
a transparent electrode formed on the second conductivity type nitride semiconductor layer and having four sides the four sides including first and second sides opposed to each other;
two second type electrode pads formed separately from each other on the transparent electrode so as to be positioned on the first side;
two second type electrodes formed on the transparent electrode and each having a first linear portion extending from the second type electrode type pads toward the second side, a rounded portion curved toward first and second type electrode pads and a second linear portion extending toward the first side, wherein the first linear portion, the rounded portion and the second linear portion are sequentially connected;
a first type electrode pads formed on the first conductivity type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the first side; and
three first type electrodes extending from the first type electrode pad toward the second side,
wherein one of the first type electrodes is disposed between the second linear portions of the two second type electrodes and each of the remaining two first type electrodes is disposed between the first and second linear portions of each of the two second type electrodes respectively.
2. The nitride-based semiconductor LED according to claim 1 , wherein the first and second conductivity-type nitride semiconductor layers are n-type and p-type nitride semiconductor layers, respectively.
3. The nitride-based semiconductor LED according to claim 1 , wherein portions of the first and second-type electrodes, which join the respective electrode pads, are formed in a straight line or curved line.
4. The nitride-based semiconductor LED according to claim 1 , wherein the first and second conductivity-type nitride semiconductor layers are n-type and p-type nitride semiconductor layers, respectively.
5. The nitride-based semiconductor LED according to claim 1 , wherein the active layer is formed on the first conductivity-type nitride semiconductor layer such that the outermost side of the active layer is positioned inwardly at a predetermined distance from the outermost side of the first conductivity type nitride semiconductor layer.