Nitride-based semiconductor light emitting diode
View Patent ↗A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball comprises a substrate; a light-emitting structure formed on the substrate; an electrode formed on the light-emitting structure; a protective film formed on the resulting structure having the electrode formed therein, the protective film exposing the electrode surface corresponding to a portion which is connected to the lead pattern of the sub-mount through a bump ball; and a grid-shape buffer film formed on the electrode surface exposed through the protective film.
1. A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball, the nitride-based semiconductor LED comprising:
a substrate;
a light-emitting structure formed on the substrate;
an electrode formed on the light-emitting structure;
a protective film formed on the resulting structure having the electrode formed therein, the protective film exposing the electrode surface corresponding to a portion which is connected to the lead pattern of the sub-mount through the bump ball; and
a grid-shaped buffer film formed on the electrode surface exposed through the protective film,
wherein the buffer film is formed of the same material as the protective film.
2. The nitride-based semiconductor LED according to claim 1 ,
wherein the buffer film is formed of a ceramic-based material.
3. The nitride-based semiconductor LED according to claim 2 ,
wherein the buffer film is formed of any one of SiO 2 and SiN.
4. The nitride-based semiconductor LED according to claim 1 ,
wherein a grid density of the grid-shaped buffer film is not smaller than a sectional area of wire.