Method of manufacturing a vertically-structured GaN-based light emitting diode
View Patent ↗The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
1. A vertically-structured GaN-based light emitting diode, comprising:
a structure supporting layer:
a p-type electrode disposed on an upper or lower surface of the structure supporting layer;
a p-type GaN layer disposed on the structure supporting layer on which the p-type electrode is disposed;
an active layer disposed on the p-type GaN layer;
an n-type GaN layer disposed on the active layer and is doped with n-type impurities;
an undoped GaN layer disposed on the n-type GaN layer to cover an entire upper surface of the n-type GaN layer, and on which a plurality of concave patterns are periodically defined; and
an n-type electrode disposed on the undoped GaN layer,
wherein a doping concentration of the n-type GaN layer gradually increases from a portion thereof where the n-type GaN layer is in contact with the undoped GaN layer.
2. The vertically-structured GaN-based light emitting diode according to claim 1 , wherein:
when the p-type electrode is disposed on the lower surface of the structure supporting layer, the structure supporting layer includes any one selected from the group consisting of a conductive substrate and a plated layer, and
when the p-type electrode is disposed on the upper surface of the structure supporting layer, the structure supporting layer includes any one selected from the group consisting of a silicon substrate and a plated layer.
3. The vertically-structured GaN-based light emitting diode according to claim 1 ,
wherein the concave patterns with a hemispheric shape are defined such that the depth thereof ranges from 0.1 to 5 μm, the diameter thereof ranges from 0.5 to 5 μm, and the pattern period thereof ranges from 0.5 to 5 μm.
4. The vertically-structured GaN-based light emitting diode according to claim 1 ,
wherein the thickness of the undoped GaN layer ranges from 0.1 to 1 μm.
5. The vertically-structured GaN-based light emitting diode according to claim 1 further including a transparent conducting oxide (TCO) layer disposed on the undoped GaN layer.