Vertical light emitting diode and method of manufacturing the same
View Patent ↗Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga + N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
1. A method of manufacturing a vertical LED, the method comprising:
forming a light emission structure in which an n-type GaN layer an active layer, and a p-type GaN layer are sequentially laminated on a substrate;
forming a p-electrode on the light emission structure;
forming a structure support layer on the p-electrode;
removing the substrate to - form an exposed N-polar surface of the n-type GaN layer,
after removing the substrate, laser-treating the exposed N-polar surface of the n-type GaN layer to form a Ga layer and a Ga+N layer which are sequentially laminated from the laser-treated surface; and
forming an n-electrode on the laser-treated exposed surface of the n-type GaN layer,
wherein the laser-treating is performed by laser with a wavelength having energy larger than an energy band gap of GaN.
2. The method according to claim 1 ,
wherein the n-electrode is formed of a single layer composed of one or more metals selected from the group consisting of Ti, Ta, and Zr.
3. The method according to claim 1 ,
wherein the n-electrode has a multilayer form in which more than two layers including a layer composed of one or more metals selected from the group consisting of Ti, Ta, and Zr are laminated.
4. The method according to claim 1 ,
wherein the p-electrode is formed of a conductive reflecting member.
5. The method according to claim 1 , further comprising
forming surface irregularities on the laser-treated surface of the n-type GaN layer, before the forming of the n-electrode.
6. The method according to claim 1 , further comprising
removing the Ga layer before the forming of the n-electrode.