Vertical GaN-based LED and method of manufacturing the same
View Patent ↗A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.
1. A vertical GaN-based LED (light emitting diode) comprising:
an n-electrode;
a first n-type GaN layer having uneven patterns including a plurality of protuberances for increasing a surface area and formed under the n-electrode;
a first AlGaN layer formed under the first n-type GaN layer;
a GaN layer formed under the first AlGaN layer;
a second AlGaN layer formed under the GaN layer;
a second n-type GaN layer formed under the second AlGaN layer;
an active layer formed under the second n-type GaN layer;
a p-type GaN layer formed under the active layer;
a p-electrode formed under the p-type GaN layer; and
a structure support layer formed under the p-electrode.
2. The vertical GaN-based LED according to claim 1 ,
wherein each of the uneven patterns has a lower width of 0.5 μm to 5 μm.
3. The vertical GaN-based LED according to claim 1 ,
wherein each of the uneven patterns has a height of 0.1 μm to 5 μm.
4. The vertical GaN-based LED according to claim 1 ,
wherein each of the uneven patterns has a lateral side tapered upwardly.
5. The vertical GaN-based LED according to claim 4 ,
wherein the uneven patterns are hemispherical patterns arranged vertically and horizontally.
6. The vertical GaN-based LED according to claim 1 ,
wherein the uneven patterns are arranged at an interval of 0.1 μm to 5 μm.
7. The vertical GaN-based LED according to claim 1 further comprising
a plurality of protuberances additionally formed in regions between the uneven patterns.
8. The vertical GaN-based LED according to claim 7 ,
wherein the plurality of protuberances are formed at a period of 0.001 μm to 5 μm.
9. The vertical GaN-based LED according to claim 7 ,
wherein the plurality of protuberances are formed to have a height of 0.001 μm to 2 μm.
10. The vertical GaN-based LED according to claim 1 ,
wherein each of the first AlGaN layer and the second AlGaN layer has a thickness of 100 Å to 500 Å.
11. The vertical GaN-based LED according to claim 1 ,
wherein Al content of the first AlGaN layer and the second AlGaN layer is in the range of 10% to 50%.
12. The vertical GaN-based LED according to claim 1 ,
wherein each of the first AlGaN layer and the second AlGaN layer is an undoped AlGaN layer.
13. The vertical GaN-based LED according to claim 1 ,
wherein each of the first AlGaN layer and the second AlGaN layer is an AlGaN layer doped with n-type impurities.
14. The vertical GaN-based LED according to claim 1 ,
wherein each of the first AlGaN layer and the second AlGaN layer includes silicon or oxygen as impurities.
15. The vertical GaN-based LED according to claim 1 ,
wherein the GaN layer has a thickness of 50 Å to 500 Å.
16. The vertical GaN-based LED according to claim 1 ,
wherein the GaN layer is an undoped GaN layer.
17. The vertical GaN-based LED according to claim 1 ,
wherein the GaN layer is a GaN layer doped with n-type impurities.
18. The vertical GaN-based LED according to claim 1 further comprising
a transparent conductor layer located between the n-electrode and the first n-type GaN layer and formed on the entire surface of the first n-type GaN layer.
19. The vertical GaN-based LED according to claim 1 further comprising
a 2D (two-dimensional) electron-gas layer located at the interface between the first AlGaN layer and the GaN layer and an interface between the GaN layer and the second AlGaN layer.