Nitride based semiconductor light emitting diode
View Patent ↗A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.
1. A nitride based semiconductor light emitting diode (LED) comprising:
a substrate;
an n-type nitride semiconductor layer formed on the substrate, the n-type nitride semiconductor layer having the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other;
an active layer formed on the second region of the n-type nitride semiconductor layer;
a p-type nitride semiconductor layer formed on the active layer;
a reflective electrode formed on the p-type nitride semiconductor layer;
a p-electrode formed on the reflective electrode;
an n-electrode, having a square outline, formed on the first region of the n-type nitride semiconductor layer; and
only four n-type electrode pads which are formed adjacent to the edge of the n-electrode thereon,
wherein the second region is not cut off by the first region and is a continuous surface,
wherein two of the n-type electrode pads are located on two corners of a first side of the n-type semiconductor layer, and the other two n-type electrode pads are symmetrically located on a second side, which is opposite the first side, and are separated by a distance smaller than the distance between the two of the n-type electrode pads on the corners of the first side, and
at the two corners of the second side facing the two of the n-type electrode pads located on the first side, and at the point of the first side facing the other two n-type pads located on the second side, no further n-electrode pads are located.
2. The nitride based semiconductor LED according to claim 1 ,
wherein the second region is symmetrical with respect to the central portion of the substrate.
3. The nitride based semiconductor LED according to claim 1 ,
wherein each of the n-type electrode pads has a width of 500 μm or less.
4. The nitride based semiconductor LED according to claim 1 ,
wherein the n-type electrode includes:
a first n-type branch electrode formed on the first region along the outermost side of the n-type nitride semiconductor layer; and
a second n-type branch electrode formed on the first region having a finger structure within the n-type nitride semiconductor layer.
5. The nitride based semiconductor LED according to claim 4 ,
wherein the first n-type branch electrode has a width greater by 25% than a width of the second n-type branch electrode.
6. The nitride based semiconductor LED according to claim 4 ,
wherein the plurality of n-type electrode pads are electrically connected to one another through the first n-type branch electrode of the n-electrode.
7. The nitride based semiconductor LED according to claim 1 ,
wherein the second region has an area greater than that of the first region.
8. The nitride based semiconductor LED according to claim 1 ,
wherein the second region has a zigzag shape.