Gallium nitride-based light emitting diode and method of manufacturing the same

1. A vertical GaN-based LED comprising:

an n-electrode;

an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure on a surface thereof, which includes a plurality of first irregular-surface structures formed at periodic intervals wherein each of the plurality of the first irregular-surface structures have irregularities formed at non-periodic intervals,

an active layer formed under the n-type GaN layer;

a p-type GaN layer formed under the active layer;

a p-electrode formed under the p-type GaN layer; and

a structure support layer formed under the p-electrode,

wherein each of the first irregular-surface structures has a hexahedron shape having an upper surface and a side surface, and the side surface of each of the first irregular-surface structures is devoid of the irregularities.

2. The vertical GaN-based LED according to claim 1 further comprising

a transparent conductive layer formed on the entire surface of the n-type GaN layer, the transparent conductive layer being positioned between the n-electrode and the n-type GaN layer.

3. A method of manufacturing a vertical GaN-based LED comprising:

sequentially forming an n-type GaN layer, an active layer, and a p-type GaN layer on a substrate;

forming a p-electrode on the p-type GaN layer;

forming a structure support layer on the p-electrode;

removing the substrate so as to expose the surface of the n-type GaN layer;

forming a plurality of first irregular-surface structures with-periodic intervals on the exposed surface of the n-type GaN layer;

forming irregularities with non-periodic intervals on each of the plurality of first irregular-surface structures; and

forming an n-electrode on the n-type GaN layer having the first irregular-surface structures formed thereon,

wherein each of the first irregular-surface structures has a hexahedron shape having an upper surface and a side surface, and the side surface of each of the first irregular-surface structures is devoid of the irregularities.

4. The method according to claim 3 ,

wherein the forming of the first irregular-surface structure includes:

forming a predetermined shape of photoresist pattern with even intervals on the exposed n-type GaN layer; and

selectively etching portions of the n-type GaN layer by using the photoresist pattern as an etching mask.

5. The method according to claim 3 ,

wherein the forming of the irregularities on each of the plurality of first irregular-surface structures is performed by using a dry-etching or wet-etching process.

6. The method according to claim 3 further comprising

forming a transparent conductive layer on the n-type GaN layer, before the forming of the n-electrode.

7. A method of manufacturing a vertical GaN-based LED comprising:

patterning the surface of a substrate into an irregularity pattern with even intervals;

forming an n-type GaN layer such that the surface of the n-type GaN layer coming in contact with the substrate patterned into the irregularity pattern has a plurality of first irregular-surface structures with periodic intervals in accordance with the irregularity pattern;

sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer;

forming a p-electrode on the p-type GaN layer;

forming a structure support layer on the p-electrode;

removing the substrate so as to expose the first irregular-surface structure of the n-type GaN layer;

forming irregularities with non-periodic intervals on the exposed surface of the plurality of first irregular-surface structures; and

forming an n-electrode on the n-type GaN layer having the first irregular-surface structures formed thereon,

wherein each of the first irregular-surface structures have a hexahedron shape having an upper surface and a side surface, and the side surface of each of the first irregular-surface structures is devoid of the irregularities.

8. The method according to claim 7 ,

wherein the patterning of the substrate includes:

forming a predetermined shape of photoresist pattern with even intervals on the substrate; and

selectively etching portions of the substrate by using the photoresist pattern as an etching mask.

9. The method according to claim 7 ,

wherein the forming of the irregularities with non-periodic intervals on the exposed surface of the plurality of first irregular-surface structures is performed by a dry-etching or wet-etching process.

10. The method according to claim 7 further comprising

forming a transparent conductive layer on the n-type GaN layer, before the forming of the n-electrode.