Vertical gallium nitride based light emitting diode with multiple electrode branches

1. A vertical GaN-based LED comprising:

an n-type bonding pad;

an n-electrode formed under the n-type bonding pad;

a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode;

a p-electrode formed under the light-emitting structure; and

a support layer formed under the p-electrode,

wherein the light-emitting structure has one or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the trenches run through the n type GaN layer and the active layer and terminate over the p-type GaN layer,

and wherein the n-electrode includes one or more negative branch electrodes extending in a direction where the negative branch electrodes are not overlapped with the trenches, the negative branch electrodes being formed on the light-emitting structure adjacent to the trench.

2. The vertical GaN-based LED according to claim 1 ,

wherein when the light-emitting structure has more than two trenches, the trenches adjacent to each other around the n-electrode are disposed so as to be spaced at a uniform distance.

3. The vertical GaN-based LED according to claim 1 , wherein the n-type and p-electrodes are composed of a conductive body with high reflectance.

4. The vertical GaN-based LED according to claim 1 , wherein the n-type or p-electrode is formed to have such a structure that a transparent electrode and a reflecting electrode are sequentially laminated.