Light emitting transistor

1. A light emitting transistor comprising:

a first conductivity-type collector layer formed on a substrate;

a second conductivity-type base layer formed on the collector layer; and

a first conductivity-type emitter layer formed on the base layer,

wherein at least one of the collector layer, the base layer, and the emitter layer has a nanorod structure with a plurality of nanorods as low-dimensional nanostructure, wherein the light emitting transistor has a bipolar junction structure, and is amplified or is switched in accordance with a bias direction of each layer.

2. The light emitting transistor according to claim 1 ,

wherein the first conductivity type is n-type, and the second conductivity type is p-type.

3. The light emitting transistor according to claim 1 ,

wherein the first conductivity type is p-type, and the second conductivity type is n-type.

4. The light emitting transistor according to claim 1 ,

wherein the collector layer, the base layer, and the emitter layer are formed of group II-VI or III-V compound semiconductors.

5. The light emitting transistor according to claim 1 further comprising

an activation layer formed at the interface between the collector layer and the base layer.

6. The light emitting transistor according to claim 1 further comprising

an activation layer formed at the interface between the base layer and the emitter layer.

7. The light emitting transistor according to claim 5 ,

wherein the activation layer has a nanorod structure with a plurality of nanorods.

8. The light emitting transistor according to claim 7 ,

wherein the activation layer is formed of a group II-VI or II-V compound semiconductor.