Vertical light emitting diode and method of manufacturing the same

1. A vertical light emitting diode (LED) comprising:

an n-electrode;

an n-type GaN layer formed under the n-electrode,

a Ga + N layer formed over an entire surface of the n-type GaN layer and under the electrode, the Ga + N layer having a surface with an N-polar surface polarity, which contacts the n-electrode, and containing more Ga than N;

an active layer formed under the n-type GaN layer;

a p-type GaN layer formed under the active layer;

a p-electrode formed under the p-type GaN layer; and

a structure support layer formed under the p-electrode,

wherein the Ga + N layer coming in contact with the n-electrode has surface irregularities formed thereon,

wherein the n-electrode contacts with the part of the Ga + N layer.

2. The vertical LED according to claim 1 ,

wherein the n-electrode is formed of a single layer composed of one or more metals selected from the group consisting of Ti, Ta, and Zr.

3. The vertical LED according to claim 1 ,

wherein the n-electrode is formed of a multilayer in which more than two layers including a layer composed of one or more metals selected from the group consisting of Ti, Ta, and Zr are laminated.

4. The vertical LED according to claim 1 ,

wherein the Ga + N layer of the n-type GaN layer is formed by laser-treating the surface of the n-type GaN layer coming in contact with the n-electrode.

5. The vertical LED according to claim 1 ,

wherein the Ga + N layer of the n-type GaN layer is formed by heat-treating the surface of the n-type GaN layer coming in contact with the n-electrode.

6. The vertical LED according to claim 1 ,

wherein the p-electrode is formed of a conductive reflecting member.

7. The vertical LED according to claim 1 ,

wherein the n-type GaN layer includes a Ga layer, the Ga + N layer and a GaN layer sequentially laminated from the surface of the n-type GaN layer facing the n-electrode.