Rate-enhanced CMP compositions for dielectric films
The invention provides a chemical-mechanical polishing composition consisting essentially of silica, an oxidizing agent, a quaternary ammonium compound, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition provides for enhanced polishing rates when used to polish dielectric films.
1 . A chemical-mechanical polishing composition consisting essentially of:
(a) silica having an average primary particle size of about 10 nm to about 40 nm,
(b) an oxidizing agent selected from the group consisting of hydrogen peroxide, urea hydrogen peroxide, percarbonate salts, benzoyl peroxide, peracetic acid, sodium peroxide, di-tert-butyl peroxide, monopersulfate salts, dipersulfate salts, nitrate salts, iron (III) compounds, and combinations thereof,
(c) a quaternary ammonium compound comprising a cation with the structure R 1 R 2 R 3 R 4 N + wherein R 1 , R 2 , R 3 , and R 4 are independently selected from the group consisting of C 2 -C 6 alkyls and C 7 -C 12 arylalkyls, and
(d) water,
wherein the polishing composition has a pH of about 1 to about 5.
2 . The polishing composition of claim 1 , wherein the silica is condensation-polymerized silica.
3 . The polishing composition of claim 2 , wherein the silica is present in an amount of about 0.1 wt. % to about 10 wt. %.
4 . The polishing composition of claim 3 , wherein the silica is present in an amount of about 0.5 wt. % to about 8 wt. %.
5 . The polishing composition of claim 1 , wherein the oxidizing agent is a combination of hydrogen peroxide and an iron (III) compound.
6 . The polishing composition of claim 5 , wherein the iron (III) compound is ferric nitrate.
7 . The polishing composition of claim 6 , wherein the hydrogen peroxide is present in an amount of about 1 wt. % to about 10 wt. %, and the ferric nitrate is present in an amount of about 0.1 ppm to about 100 ppm.
8 . The polishing composition of claim 1 , wherein the quaternary ammonium compound is present in an amount of about 100 ppm to about 5000 ppm.
9 . The polishing composition of claim 8 , wherein the quaternary ammonium compound comprises a cation selected from the group consisting of tetraethylammonium, tetrapropylammonium, tetrabutylammonium, and tetrapentylammonium.
10 . A method of chemically-mechanically polishing a substrate, which method comprises:
(i) contacting a substrate with a polishing pad and a chemical-mechanical polishing composition consisting essentially of:
(a) silica having an average primary particle size of about 10 nm to about 40 nm,
(b) an oxidizing agent selected from the group consisting of hydrogen peroxide, urea hydrogen peroxide, percarbonate salts, benzoyl peroxide, peracetic acid, sodium peroxide, di-tert-butyl peroxide, monopersulfate salts, dipersulfate salts, nitrate salts, iron (III) compounds, and combinations thereof,
(c) a quaternary ammonium compound comprising a cation with the structure R 1 R 2 R 3 R 4 N + wherein R 1 , R 2 , R 3 , and R 4 are independently selected from the group consisting of C 2 -C 6 alkyls and C 7 -C 12 arylalkyls, and
(d) water,
wherein the polishing composition has a pH of about 1 to about 5,
(ii) moving the polishing pad relative to the substrate with the chemical-mechanical polishing composition therebetween, and
(iii) abrading at least a portion of the substrate to polish the substrate.
11 . The method of claim 10 , wherein the silica is condensation-polymerized silica.
12 . The method of claim 11 , wherein the silica is present in an amount of about 0.1 wt. % to about 10 wt. %.
13 . The method of claim 12 , wherein the silica is present in an amount of about 0.5 wt. % to about 8 wt. %.
14 . The method of claim 10 , wherein the oxidizing agent is a combination of hydrogen peroxide and an iron (III) compound.
15 . The method of claim 14 , wherein the iron (III) compound is ferric nitrate.
16 . The method of claim 15 , wherein the hydrogen peroxide is present in an amount of about 0.1 wt. % to about 10 wt. %, and the ferric nitrate is present in an amount of about 1 ppm to about 100 ppm.
17 . The method of claim 10 , wherein the quaternary ammonium compound is present in an amount of about 100 ppm to about 5000 ppm.
18 . The method of claim 18 , wherein the quaternary ammonium compound comprises a cation selected from the group consisting of tetraethylammonium, tetrapropylammonium, tetrabutylammonium, and tetrapentylammonium.
19 . The method of claim 10 , wherein the substrate comprises silicon oxide.
20 . The method of claim 19 , wherein the substrate further comprises a metal selected from the group consisting of tungsten, copper, tantalum, tantalum nitride, aluminum, titanium, titanium nitride, and combinations thereof.