Patent Assignment
Reel/Frame 027727/0275
Notice of Security Interest in Patents
Recorded: 2012-02-16
Pages: 51
Assignor
CABOT MICROELECTRONICS CORPORATION
Executed: 2012-02-13
Assignee
BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
135 S. LASALLE STREET, IL4-135-05-41, CHICAGO, ILLINOIS, 60603
Covered Properties
(247)
Negative poisson's ratio material-containing CMP polishing pad
Application:
10/754,390 →
Publication:
US 2005/0153634
Abrasive-free polishing system
Application:
11/205,428 →
Publication:
US 2007/0039926
Composition and method to polish silicon nitride
Application:
11/374,238 →
Publication:
US 2007/0209287
Iodate-Containing Chemical-Mechanical Polishing Compositions and Methods
Compositions and methods for polishing silicon nitride materials
Silicon oxide polishing method utilizing colloidal silica
Application:
11/478,004 →
Publication:
US 2008/0220610
Rate-enhanced CMP compositions for dielectric films
Application:
11/491,612 →
Publication:
US 2008/0020680
Onium-containing CMP compositions and methods of use thereof
CMP of copper/ruthenium/tantalum substrates
Application:
11/591,730 →
Publication:
US 2008/0105652
Compositions for Polishing Aluminum/Copper and Titanium in Damascene Structures
Compositions and methods for CMP of indium tin oxide surfaces
Application:
11/706,929 →
Publication:
US 2007/0190789
Method of Polishing a Tungsten Carbide Surface
Compositions and Methods for Cmp of Semiconductor Materials
Application:
12/226,394 →
Publication:
US 2009/0156006
CMP compositions containing a soluble peroxometalate complex and methods of use thereof
CMP method for metal-containing substrates
Chemical Mechanical Polishing Slurry, Its Preparation Method, and Use for the Same
Copper CMP composition containing ionic polyelectrolyte and method
Application:
11/895,896 →
Publication:
US 2009/0056231
Glass polishing compositions and methods
Application:
12/311,717 →
Publication:
US 2010/0022171
Compositions and Methods for Ruthenium and Tantalum Barrier Cmp
Application:
11/937,804 →
Publication:
US 2009/0124173
Methods for Polishing Aluminum Nitride
Application:
12/312,477 →
Publication:
US 2010/0062601
Halide Anions for Metal Removal Rate Control
Composition and method for enhancing pot life of hydrogen peroxide-containing CMP slurries
Application:
12/011,435 →
Publication:
US 2008/0132071
Polishing Slurry for Aluminum and Aluminum Alloys
Compositions for Polishing Aluminum/Copper and Titanium in Damascene Structures
Method of Polishing Nickel-Phosphorous
Compositions and Methods for Chemical-Mechanical Polishing of Phase Change Materials
Application:
12/670,495 →
Publication:
US 2010/0190339
Methods and Compositions for Polishing Silicon-Containing Substrates
Polishing Pad
Application:
12/673,057 →
Publication:
US 2011/0183579
Cmp Sensor and Control System
Polishing Composition and Method Utilizing Abrasive Particles Treated with an Aminosilane
Method of Polishing a Silicon-Containing Dielectric
Slurry Composition Containing Non-Ionic Polymer and Method for Use
Polishing Composition for Nickel-Phosphorous Memory Disks
CMP method for improved oxide removal rate
Application:
12/384,161 →
Publication:
US 2009/0191710
Polishing Composition and Method for High Silicon Nitride to Silicon Oxide Removal Rate Ratios
Polishing Silicon Carbide
Wire Saw Slurry Recycling Process
Polishing composition for nickel-phosphorous memory disks
Polishing Composition Containing Polyether Amine
Barrier Slurry for Low-K Dielectrics
Composition and Method for Polishing Bulk Silicon
Method to Selectively Polish Silicon Carbide Films
Methods and Apparatus for Chemical-Mechanical Polishing Utilizing Low Suspended Solids Polishing Compositions
Application:
12/631,977 →
Publication:
US 2010/0144245
Wiresaw Apparatus and Method for Continuous Removal of Magnetic Impurities During Wiresaw Cutting
Composition for Improving Dryness During Wire Sawing
Wiresaw Cutting Method
Cutting Fluid Composition for Wiresawing
Application:
13/139,046 →
Publication:
US 2011/0240002
Self-Cleaning Wiresaw Apparatus and Method
Cmp Porous Pad with Particles in a Polymeric Matrix
Composition and Method for Polishing Bulk Silicon
Oxidation-Stabilized Cmp Compositions and Methods
Cmp Compositions and Methods for Suppressing Polysilicon Removal Rates
Grooved Cmp Polishing Pad
Application:
12/837,705 →
Publication:
US 2011/0014858
Cmp System Utilizing Halogen Adduct
Application:
12/838,813 →
Publication:
US 2010/0276392
Compositions for Cmp of Semiconductor Materials
Silicon Polishing Compositions with High Rate and Low Defectivity
Metal Cations for Initiating Polishing
Composition and Method for Polishing Polysilicon
Metal-Passivating Cmp Compositions and Methods
Silicon Polishing Compositions with Improved Psd Performance
Compositions and Methods for Selective Polishing of Silicon Nitride Materials
Dilutable Cmp Composition Containing a Surfactant
Application:
13/167,467 →
Publication:
US 2011/0247996
Cmp Slurry Recycling System and Methods
Application:
13/210,875 →
Publication:
US 2012/0042575
Composition and Method for Polishing Aluminum Semiconductor Substrates
Method of Chemical-Mechanical Polishing an Electronic Component Substrate and Polishing Slurry Therefor
Patent:
4,954,142 →
Application:
07/285,435 →
Chemical Mechanical Polishing Slurry for Mental Layers
Patent:
5,527,423 →
Application:
08/319,213 →
Chemical Mechanical Polishing Slurry for Metal Layers and Films
Patent:
5,858,813 →
Application:
08/644,509 →
Multi-Oxidizer Slurry for Chemical Mechanical Polishing
Patent:
5,783,489 →
Application:
08/718,937 →
Composition and Slurry Useful for Metal Cmp
Patent:
5,958,288 →
Application:
08/753,482 →
Chemical Mechanical Polishing Slurry Useful for Copper Substrates
Patent:
5,954,997 →
Application:
08/763,705 →
Composition for Oxide Cmp
Patent:
5,759,917 →
Application:
08/774,488 →
Multi-Oxidizer Slurry for Chemical Mechanical Polishing
Patent:
6,033,596 →
Application:
08/800,562 →
Composition and Slurry Useful for Metal Cmp
Patent:
5,980,775 →
Application:
08/827,918 →
Composition and Method for Polishing Rigid Disks
Patent:
6,015,506 →
Application:
08/844,195 →
Composition and Slurry Useful for Metal Cmp
Patent:
6,068,787 →
Application:
08/891,468 →
Chemical Mechanical Polishing Slurry Useful for Copper Substrates
Patent:
6,126,853 →
Application:
08/891,649 →
Polishing Composition Including an Inhibitor of Tungsten Etching
Patent:
6,083,419 →
Application:
08/901,803 →
Chemical Mechanical Polishing Slurry Useful for Copper Substrates
Patent:
6,309,560 →
Application:
08/944,036 →
Composition for Oxide Cmp
Patent:
6,689,692 →
Application:
08/994,894 →
Chemical Mechanical Polishing Slurry for Tungsten
Patent:
6,284,151 →
Application:
08/997,289 →
Chemical Mechanical Polishing Slurry and Method for Polishing Metal/-Oxide Layers
Patent:
6,294,105 →
Application:
08/997,290 →
Chemical Mechanical Polishing Slurry Useful for Copper Substrates
Polishing Pad for a Semiconductor Substrate
Patent:
6,062,968 →
Application:
09/062,327 →
Cmp Slurry Containing a Solid Catalyst
Patent:
6,177,026 →
Application:
09/084,630 →
Polishing Composition Including an Inhibitor of Tungsten Etching
Patent:
6,136,711 →
Application:
09/086,659 →
Chemical Mechanical Polishing Slurry and Method for Using Same
Chemical Mechanical Polishing Slurry Useful for Copper/Tantalum Substrates
Patent:
6,217,416 →
Application:
09/105,065 →
Chemical Mechanical Polishing Slurry Useful for Copper/Tantalum Substrate
Patent:
6,063,306 →
Application:
09/105,555 →
Dual-Valent Rare Earth Additives to Polishing Slurries
Patent:
6,238,469 →
Application:
09/226,191 →
Chemical-Mechanical Planarization of Barriers or Liners for Copper Metallurgy
Patent:
6,375,693 →
Application:
09/307,123 →
Chemical Mechanical Polishing Method Useful for Copper Substrates
Cleaning Solution for Semiconductor Surfaces Following Chemical-Mechanical Polishing
Patent:
6,395,693 →
Application:
09/405,249 →
Chemical-Mechanical Planarization of Metallurgy
Patent:
6,632,377 →
Application:
09/409,798 →
Composition and Method for Polishing Rigid Disks
Patent:
6,347,978 →
Application:
09/425,473 →
Use of Csoh in a Dielectric Cmp Slurry
Composition and Method for Planarizing Surfaces
Patent:
6,293,848 →
Application:
09/440,401 →
Composition and Method for Planarizing Surfaces
Patent:
6,319,096 →
Application:
09/440,525 →
Slurry for Mechanical Polishing (Cmp) of Metals and Use Thereof
Patent:
6,348,076 →
Application:
09/472,961 →
Method for Polishing a Substrate Using a CMP Slurry
Patent:
6,362,104 →
Application:
09/501,221 →
Method of polishing using multi-oxidizer slurry
Patent:
6,316,366 →
Application:
09/503,996 →
Method for Polishing a Memory or Rigid Disk with an Amino Acid-Containing Composition
Patent:
6,471,884 →
Application:
09/542,774 →
Polishing Slurries for Copper and Associated Materials
Patent:
6,409,781 →
Application:
09/562,298 →
Method for Polishing a Memory or Rigid Disk with a Phosphate Ion-Containing Polishing System
Patent:
6,976,905 →
Application:
09/595,227 →
Silane Containing Polishing Composition for Cmp
Patent:
6,646,348 →
Application:
09/609,480 →
Polishing Composition for Metal Cmp
Patent:
6,592,776 →
Application:
09/609,882 →
Cmp Composition Containing Silane Modified Abrasive Particles
Patent:
6,582,623 →
Application:
09/609,884 →
Composition and Method for Planarizing Surfaces
Patent:
6,527,817 →
Application:
09/625,142 →
Polishing System with Stopping Compound and Method of Its Use
Patent:
6,855,266 →
Application:
09/636,246 →
Method for Polishing a Memory or Rigid Disk with an Oxidized Halide-Containing Polishing System
Patent:
6,468,137 →
Application:
09/656,665 →
Chemical mechanical polishing method useful for copper substrates
Patent:
6,362,106 →
Application:
09/660,847 →
Method of Polishing a Memory or Rigid Disk with an Ammonia- and/or Halide-Containing Composition
Patent:
6,461,227 →
Application:
09/690,585 →
Chemical-mechanical polishing method
Patent:
6,316,365 →
Application:
09/728,779 →
Method of Polishing or Planarizing a Substrate
Cmp Polishing Pad Including a Solid Catalyst
Catalytic Reactive Pad for Metal Cmp
Patent:
6,383,065 →
Application:
09/766,759 →
Polishing Disk with End-Point Detection Port
Chemical Mechanical Polishing Slurry Useful for Copper/Tantalum Substrates
Rare Earth Salt/Oxidizer-Based Cmp Method
Polishing Pad Comprising a Filled Translucent Region
Phosphono Compound-Containing Polishing Composition and Method of Using Same
Boron-Containing Polishing System and Method
Polishing Pad Comprising Particles with a Solid Core and Polymeric Shell
Polishing Slurries for Copper and Associated Materials
Polishing Slurries for Copper and Associated Materials
Alkali Metal-Containing Polishing System and Method
Cmp Systems and Methods Utilizing Amine-Containing Polymers
Cmp Method for Noble Metals
Patent:
6,527,622 →
Application:
10/054,059 →
Anionic Abrasive Particles Treated with Positively Charged Polyelectrolytes for Cmp
Patent:
6,776,810 →
Application:
10/073,844 →
Method for Manufacturing a Polishing Pad Having a Compressed Translucent Region
Methanol-Containing Silica-Based Cmp Compositions
Chemical Mechanical Polishing Slurry Useful for Copper Substrates
Process for Fabricating Optical Switches
Method of Reducing in-Trench Smearing During Polishing
Compositions and Methods for Dielectric Cmp
Chemical Mechanical Polishing Slurry Useful for Copper Substrates
Cleaning Solution for Semiconductor Surfaces Following Chemical-Mechanical Polishing
Metal Oxide Coated Carbon Black for Cmp
Cmp Compositions Containing Iodine and an Iodine Vapor-Trapping Agent
Patent:
6,641,630 →
Application:
10/165,133 →
Cmp Compositions for Low-K Dielectric Materials
Method and Apparatus for Providing a Miniature, Flexible Voltage Upconverter
Global Planarization Method
Method of Polishing a Substrate with a Polishing System Containing Conducting Polymer
Polishing Composition Containing Conducting Polymer
Slurry for Mechanical Polishing (Cmp) of Metals and Use Thereof
Method for Copper Cmp Using Polymeric Complexing Agents
Cmp Method Utilizing Amphiphilic Nonionic Surfactants
Microporous Polishing Pads
Transparent Microporous Materials for Cmp
Polishing Compositions and Use Thereof
Patent:
6,641,632 →
Application:
10/295,836 →
Polishing Composition Storage Container
Chemical Mechanical Polishing Systems and Methods for Their Use
Method of Polishing a Multi-Layer Substrate
Method of Using a Polishing System
Method of Polishing a Silicon-Containing Dielectric
Cmp Pad with Composite Transparent Window
Cmp Pad with Composite Transparent Window
Mixed-Abrasive Polishing Composition and Method for Using the Same
Catalyst/Oxidizer-Based Cmp System for Organic Polymer Films
Patent:
6,830,503 →
Application:
10/368,275 →
Cmp Method for Noble Metals
Method of Polishing a Lanthanide Substrate
Coated Metal Oxide Particles for Cmp
Polishing Composition for Metal Cmp
Multi-Layer Polishing Pad Material for Cmp
Ultrasonic Welding Method for the Manufacture of a Polishing Pad Comprising an Optically Transmissive Region
Polishing Pad with Oriented Pore Structure
Cmp of Noble Metals
Chemical Mechanical Polishing Slurry Useful for Copper Substrates
Chemical-Mechanical Polishing Composition and Method for Using the Same
System for the Preferential Removal of Silicon Oxide
Polishing Pad with Recessed Window
Method of Forming a Current Controlling Device
Mem Switching Device
Compositions for Oxide Cmp
Polishing Pad Comprising Biodegradable Polymer
Chemical-Mechanical Polishing of Metals in an Oxidized Form
Integrated Polishing and Electroless Deposition
Polishing System Comprising a Highly Branched Polymer
Method of Operating and Process for Fabricating an Electron Source
Method of Polishing a Silicon-Containing Dielectric
Microporous Polishing Pads
Microporous Polishing Pads
Microporous Polishing Pads
Boron-Containing Polishing System and Method
Cmc Porous Pad with Component-Filled Pores
Low Surface Energy Cmp Pad
Polishing Pad Comprising Hydrophobic Region and Endpoint Detection Port
X-Ray Source with Nonparallel Geometry
Anionic Abrasive Particles Treated with Positively Charged Polyelectrolytes for Cmp
Mobile Ion Memory
Three Dimensional Integrated Circuits
Electrochemical-Mechanical Polishing System
Method of Polishing a Tungsten-Containing Substrate
Continuous Contour Polishing of a Multi-Material Surface
Polishing Composition for Noble Metals
Polishing Pad with Microporous Regions
Chemical-Mechanical Polishing Composition and Method for Using the Same
Cmp Composition with a Polymer Additive for Polishing Noble Metals
Method of Sharpening Cutting Edges
Metal Ion-Containing Cmp Composition and Method for Using the Same
Cmp Composition Comprising Surfactant
Polishing Composition and Method for High Silicon Nitride to Silicon Oxide Removal Rate Ratios
Chemical Mechanical Polishing Systems and Methods for Their Use
Method of Preparing a Conductive Film
Carbon Nanotube-Based Electronic Switch
Tribo-Chronoamperometry as a Tool for Cmp Application
Polymeric Inhibitors for Enhanced Planarization
Multi-Layer Polishing Pad Material for Cmp
Polishing Slurries for Copper and Associated Materials
Controlled Electrochemical Polishing Method
Transparent Microporous Materials for Cmp
Use of Cmp for Aluminum Mirror and Solar Cell Fabrication
Compositions and Methods for Tantalum Cmp
Composition and Method for Planarizing Surfaces
Decontamination and Sterilization System Using Large Area X-Ray Source
Cmp of Copper/Ruthenium Substrates
Method for Manufacturing Microporous Cmp Materials Having Controlled Pore Size
Polishing Composition and Method for High Silicon Nitride to Silicon Oxide Removal Rate Ratios
Oxidation-Stabilized Cmp Compositions and Methods
Halide Anions for Metal Removal Rate Control
Polishing Composition Containing Polyether Amine
Gold Cmp Composition and Method
Tunable Selectivity Slurries in Cmp Applications
Patent:
7,294,576 →
Application:
11/478,023 →
Tantalum Cmp Compositions and Methods
Gallium and Chromium Ions for Oxide Rate Enhancement
Silicon Carbide Polishing Method Utilizing Water-Soluble Oxidizers
Polyoxometalate Compositions and Methods
Compositions and Methods for Cmp of Low-K-Dielectric Materials
Composition and Method for Damascene Cmp
System for the Preferential Removal of Silicon Oxide
Compositions and Methods for Cmp of Phase Change Alloys
Polishing Composition for a Tungsten-Containing Substrate
Compositions and Methods for Cmp of Semiconductor Materials
Cmp System Utilizing Halogen Adduct
Method and Apparatus for Measurement of Magnetic Permeability of a Material
Cmp Porous Pad with Component-Filled Pores
X-Ray Source with Nonparallel Geometry
Ruthenium Cmp Compositions and Methods
Low Ph Barrier Slurry Based on Titanium Dioxide
Copper-Passivating Cmp Compositions and Methods
Method of Operating and Process for Fabricating an Electron Source
Composition and Method for Polishing Nickel-Phosphorous-Coated Aluminum Hard Disks
Silicon Carbide Polishing Method Utilizing Water-Soluble Oxidizers
Stable, High Rate Silicon Slurry
Polishing Composition and Method Utilizing Abrasive Particles Treated with an Aminosilane
Polishing Composition and Method for High Silicon Nitride to Silicon Oxide Removal Rate Ratios
Chemical-Mechanical Polishing Composition and Method for Using the Same
Polishing Pad Carrier
Patent:
640,057 →
Application:
29/337,774 →
Related Assignments
(25)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Feb 2, 2004
From: PRASAD, ABANESHWAR; MYERS, RONALD E.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 014297/0849 →
Assignment of Assignor's Interest
Sep 13, 2005
From: CHERIAN, ISAAC K.; MOEGGENBORG, KEVIN J.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 016527/0560 →
Assignment of Assignor's Interest
Apr 28, 2006
From: LI, SHOUTIAN; CARTER, PHILLIP W; ZHANG, JIAN
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 017545/0420 →
Assignment of Assignor's Interest
May 1, 2006
From: CHEN, ZHAN; VACASSY, ROBERT; CARTER, PHILLIP W.; DYSARD, JEFFREY M.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 017557/0230 →
Assignment of Assignor's Interest
Jul 7, 2006
From: DYSARD, JEFFREY; ANJUR, SRIRAM; JOHNS, TIMOTHY; CHEN, ZHAN
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 017890/0859 →
Assignment of Assignor's Interest
Oct 18, 2006
From: WHITE, MICHAEL L; CHEN, ZHAN
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 018404/0322 →
Assignment of Assignor's Interest
Dec 11, 2006
From: BRUSIC, VLASTA; ZHOU, RENJIE; THOMPSON, CHRISTOPHER C.; FEENEY, PAUL
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 018609/0102 →
Assignment of Assignor's Interest
Feb 14, 2007
From: BRUSIC, VLASTA; ZHOU, RENJIE; FEENEY, PAUL; THOMPSON, CHRISTOPHER
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 018888/0032 →
Assignment of Assignor's Interest
Feb 23, 2007
From: VACASSY, ROBERT; BAYER, BENJAMIN; CHEN, ZHAN; CHAMBERLAIN, JEFFREY P.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 018925/0103 →
Assignment of Assignor's Interest
Apr 26, 2007
From: CARTER, PHILLIP; NAGUIB, NEVIN; SUN, FRED
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 019218/0326 →
Assignment of Assignor's Interest
May 31, 2007
From: BAYER, BENJAMIN; CHEN, ZHAN; CHAMBERLAIN, JEFFREY P; VACASSY, ROBERT
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 019363/0269 →
Assignment of Assignor's Interest
Aug 7, 2007
From: WHITE, DANIELA; PARKER, JOHN
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 019659/0335 →
Assignment of Assignor's Interest
Aug 27, 2007
From: HOU, HUI-FANG; LIU, WEN-CHENG; CHEN, YEN-LIANG; CHEN, JUI-CHING
To: EPOCH MATERIAL CO., LTD.
Reel/Frame 019793/0494 →
Assignment of Assignor's Interest
Oct 5, 2007
From: WHITE, DANIELA; KELEHER, JASON; PARKER, JOHN
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 019926/0408 →
Assignment of Assignor's Interest
Feb 20, 2008
From: LI, SHOUTIAN
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 020533/0009 →
Assignment of Assignor's Interest
Jun 18, 2008
From: LI, SHOUTIAN
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 021113/0330 →
Assignment of Assignor's Interest
Jan 22, 2009
From: VACASSY, ROBERT; ZHOU, RENJIE
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 022143/0609 →
Assignment of Assignor's Interest
Feb 7, 2009
From: ANJUR, SRIRAM; DYSARD, JEFFREY; FEENEY, PAUL; JOHNS, TIMOTHY
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 022221/0854 →
Assignment of Assignor's Interest
Feb 8, 2010
From: NAGUIB, NEVIN; MOEGGENBORG, KEVIN
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 023913/0576 →
Assignment of Assignor's Interest
Feb 18, 2010
From: MOEGGENBORG, KEVIN
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 023959/0345 →
Release of Security Interest
Nov 16, 2018
From: BANK OF AMERICA, N.A.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 047587/0119 →
Security Agreement
Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
Change of Name
Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
Release of Security Interest
Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.
Reel/Frame 060592/0260 →
Security Interest
Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →