Patent Assignment
Reel/Frame 047588/0263
SECURITY AGREEMENT
Recorded: 2018-11-16
Received: 2018-11-16
Pages: 37
Assignors
CABOT MICROELECTRONICS CORPORATION
Executed: 2018-11-15
FLOWCHEM LLC
Executed: 2018-11-15
KMG ELECTRONIC CHEMICALS, INC.
Executed: 2018-11-15
MPOWER SPECIALTY CHEMICALS LLC
Executed: 2018-11-15
QED TECHNOLOGIES INTERNATIONAL, INC.
Executed: 2018-11-15
Assignee
JPMORGAN CHASE BANK, N.A.
10 SOUTH DEARBORN STREET, L2, WORKFLOW MANAGEMENT DEPARTMENT, CHICAGO, IL, 60603, UNITED STATES
Covered Applications
(100)
COMPOSITION FOR TUNGSTEN CMP
App. No. 16/131,180
→
METHODS AND COMPOSITIONS FOR PROCESSING DIELECTRIC SUBSTRATE
App. No. 16/018,281
→
COMPOSITION AND METHOD FOR POLISHING MEMORY HARD DISKS EXHIBITING REDUCED EDGE ROLL OFF
App. No. 16/000,062
→
CHEMICAL-MECHANICAL PROCESSING SLURRY AND METHODS FOR PROCESSING A NICKEL SUBSTRATE SURFACE
App. No. 15/951,598
→
CHEMICAL-MECHANICAL PROCESSING SLURRY AND METHODS
App. No. 15/951,358
→
SELF-STOPPING POLISHING COMPOSITION AND METHOD FOR BULK OXIDE PLANARIZATION
App. No. 15/934,219
→
CMP COMPOSITIONS CONTAINING POLYMER COMPLEXES AND AGENTS FOR STI APPLICATIONS
App. No. 15/920,813
→
COATED COMPRESSIVE SUBPAD FOR CHEMICAL MECHANICAL POLISHING
App. No. 15/875,773
→
TUNGSTEN BULK POLISHING METHOD WITH IMPROVED TOPOGRAPHY
App. No. 15/866,008
→
TUNGSTEN BUFF POLISHING COMPOSITIONS WITH IMPROVED TOPOGRAPHY
App. No. 15/864,720
→
COMPOSITION AND METHOD FOR REMOVING RESIDUE FROM CHEMICAL-MECHANICAL PLANARIZATION SUBSTRATE
App. No. 15/825,305
→
COMPOSITION AND METHOD FOR POLISHING MEMORY HARD DISKS EXHIBITING REDUCED SURFACE SCRATCHING
App. No. 15/817,959
→
CMP COMPOSITIONS SELECTIVE FOR OXIDE AND NITRIDE WITH IMPROVED DISHING AND PATTERN SELECTIVITY
App. No. 15/784,949
→
DIAMOND-BASED SLURRIES WITH IMPROVED SAPPHIRE REMOVAL RATE AND SURFACE ROUGHNESS
App. No. 15/564,605
→
SURFACE TREATED ABRASIVE PARTICLES FOR TUNGSTEN BUFF APPLICATIONS
App. No. 15/723,886
→
NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS
App. No. 15/706,192
→
SYSTEMS FOR MIXING A LIQUID AND RELATED METHODS
App. No. 15/684,470
→
ALTERNATIVE OXIDIZING AGENTS FOR COBALT CMP
App. No. 15/649,378
→
POLISHING COMPOSITION COMPRISING AN AMINE-CONTAINING SURFACTANT
App. No. 15/629,487
→
CHEMICAL-MECHANICAL PROCESSING SLURRY AND METHODS FOR PROCESSING A NICKEL SUBSTRATE SURFACE
App. No. 15/615,591
→
COBALT POLISHING ACCELERATORS
App. No. 15/603,634
→
POLISHING PAD HAVING POLISHING SURFACE WITH CONTINUOUS PROTRUSIONS
App. No. 15/479,779
→
METHOD OF POLISHING GROUP III-V MATERIALS
App. No. 15/433,068
→
POLISHING COMPOSITION COMPRISING CATIONIC POLYMER ADDITIVE
App. No. 15/414,786
→
CLEANING COMPOSITION FOLLOWING CMP AND METHODS RELATED THERETO
App. No. 15/327,326
→
METHOD OF POLISHING A LOW-K SUBSTRATE
App. No. 15/399,810
→
COMPOSITION AND METHOD FOR POLISHING SILICON CARBIDE
App. No. 15/398,933
→
CMP PROCESSING COMPOSITION COMPRISING ALKYLAMINE AND CYCLODEXTRIN
App. No. 15/394,090
→
POLISHING COMPOSITION AND METHOD UTILIZING ABRASIVE PARTICLES TREATED WITH AN AMINOSILANE
App. No. 15/346,835
→
POLISHING COMPOSITION CONTAINING CERIA ABRASIVE
App. No. 15/338,724
→
CMP POLISHING PAD WITH COLUMNAR STRUCTURE AND METHODS RELATED THERETO
App. No. 15/303,696
→
POLYURETHANE CMP PADS HAVING A HIGH MODULUS RATIO
App. No. 15/273,855
→
METHODS AND COMPOSITIONS FOR PROCESSING DIELECTRIC SUBSTRATE
App. No. 15/252,567
→
METHODS AND COMPOSITIONS FOR PROCESSING DIELECTRIC SUBSTRATE
App. No. 15/207,973
→
CMP COMPOSITION AND METHOD FOR POLISHING RIGID DISKS
App. No. 15/091,275
→
POLISHING COMPOSITION CONTAINING CERIA PARTICLES AND METHOD OF USE
App. No. 15/056,198
→
CUSTOMIZED POLISHING PADS FOR CMP AND METHODS OF FABRICATION AND USE THEREOF
App. No. 15/042,777
→
CLEANING COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS AFTER CMP
App. No. 14/993,837
→
TUNGSTEN PROCESSING SLURRY WITH CATALYST
App. No. 14/988,891
→
COMPOSITION FOR TUNGSTEN CMP
App. No. 14/965,168
→
POLISHING PAD WITH FOUNDATION LAYER AND WINDOW ATTACHED THERETO
App. No. 14/931,737
→
TUNGSTEN-PROCESSING SLURRY WITH CATIONIC SURFACTANT AND CYCLODEXTRIN
App. No. 14/924,997
→
TUNGSTEN-PROCESSING SLURRY WITH CATIONIC SURFACTANT
App. No. 14/925,054
→
COBALT DISHING CONTROL AGENTS
App. No. 14/919,490
→
CORROSION INHIBITORS AND RELATED COMPOSITIONS AND METHODS
App. No. 14/919,404
→
COBALT POLISHING ACCELERATORS
App. No. 14/919,449
→
COBALT INHIBITOR COMBINATION FOR IMPROVED DISHING
App. No. 14/918,756
→
SLURRY FOR CHEMICAL MECHANICAL POLISHING OF COBALT
App. No. 14/919,526
→
NICKEL PHOSPHOROUS CMP COMPOSITIONS AND METHODS
App. No. 14/881,837
→
POLISHING PAD WITH CONCENTRIC OR APPROXIMATELY CONCENTRIC POLYGON GROOVE PATTERN
App. No. 14/875,513
→
GROOVED CMP PADS
App. No. 14/874,179
→
SELECTIVE NITRIDE SLURRIES WITH IMPROVED STABILITY AND IMPROVED POLISHING CHARACTERISTICS
App. No. 14/849,066
→
COMPOSITION AND METHOD FOR POLISHING A SAPPHIRE SURFACE
App. No. 14/838,460
→
SOFT POLISHING PAD FOR POLISHING A SEMICONDUCTOR SUBSTRATE
App. No. 14/823,956
→
TUNGSTEN CHEMICAL-MECHANICAL POLISHING COMPOSITION
App. No. 14/750,204
→
COLLOIDAL SILICA CHEMICAL-MECHANICAL POLISHING CONCENTRATE
App. No. 14/750,107
→
COPPER BARRIER CHEMICAL-MECHANICAL POLISHING COMPOSITION
App. No. 14/750,271
→
COLLOIDAL SILICA CHEMICAL-MECHANICAL POLISHING COMPOSITION
App. No. 14/749,923
→
METHODS FOR FABRICATING A CHEMICAL-MECHANICAL POLISHING COMPOSITION
App. No. 14/750,050
→
COLLOIDAL SILICA CHEMICAL-MECHANICAL POLISHING COMPOSITION
App. No. 14/749,948
→
CMP SLURRY COMPOSITIONS AND METHODS FOR ALUMINUM POLISHING
App. No. 14/743,583
→
POLISHING PAD WITH FOUNDATION LAYER AND POLISHING SURFACE LAYER
App. No. 14/732,497
→
POLISHING PAD WITH GROOVED FOUNDATION LAYER AND POLISHING SURFACE LAYER
App. No. 14/727,586
→
POLISHING PAD WITH OFFSET CONCENTRIC GROOVING PATTERN AND METHOD FOR POLISHING A SUBSTRATE THEREWITH
App. No. 14/440,209
→
MULTI-LAYER POLISHING PAD FOR CMP
App. No. 14/700,580
→
COMPOSITION AND METHOD FOR POLISHING MOLYBDENUM
App. No. 14/686,988
→
POLISHING COMPOSITION AND METHOD UTILIZING ABRASIVE PARTICLES TREATED WITH AN AMINOSILANE
App. No. 14/657,594
→
POLISHING COMPOSITION CONTAINING CATIONIC POLYMER ADDITIVE
App. No. 14/639,598
→
COMPOSITIONS AND METHODS FOR CMP OF TUNGSTEN MATERIALS
App. No. 14/639,434
→
POLISHING COMPOSITION CONTAINING CERIA ABRASIVE
App. No. 14/639,564
→
COMPOSITION AND METHOD FOR POLISHING MEMORY HARD DISKS EXHIBITING REDUCED EDGE ROLL-OFF
App. No. 14/627,081
→
CMP METHOD FOR SUPPRESSION OF TITANIUM NITRIDE AND TITANIUM/TITANIUM NITRIDE REMOVAL
App. No. 14/616,250
→
CMP COMPOSITION FOR SILICON NITRIDE REMOVAL
App. No. 14/612,736
→
LOW DENSITY POLISHING PAD
App. No. 14/611,064
→
POLISHING PAD WITH ALIGNMENT FEATURE
App. No. 14/610,991
→
CMP COMPOSITIONS EXHIBITING REDUCED DISHING IN STI WAFER POLISHING
App. No. 14/568,311
→
METHODS FOR PRODUCING IN-SITU GROOVES IN CHEMICAL MECHANICAL PLANARIZATION (CMP) PADS, AND NOVEL CMP PAD DESIGNS
App. No. 14/562,589
→
METHOD OF FABRICATING A POLISHING
App. No. 14/550,129
→
POLISHING PAD WITH HOMOGENEOUS BODY HAVING DISCRETE PROTRUSIONS THEREON
App. No. 14/530,534
→
POLISHING COMPOSITION AND METHOD FOR NICKEL-PHOSPHOROUS COATED MEMORY DISKS
App. No. 14/515,723
→
CMP POLISHING PAD HAVING EDGE EXCLUSION REGION OF OFFSET CONCENTRIC GROOVE PATTERN
App. No. 14/515,560
→
COMPOSITION AND METHOD FOR POLISHING BULK SILICON
App. No. 14/509,081
→
CUSTOMIZED POLISHING PADS FOR CMP AND METHODS OF FABRICATION AND USE THEREOF
App. No. 14/489,177
→
Drag Reducing Compositions and Methods of Manufacture and Use
App. No. 14/466,367
→
POLISHING PAD WITH POROUS INTERFACE AND SOLID CORE, AND RELATED APPARATUS AND METHODS
App. No. 14/459,452
→
POLISHING PAD HAVING POROGENS WITH LIQUID FILLER
App. No. 14/307,846
→
CMP COMPOSITIONS SELECTIVE FOR OXIDE OVER POLYSILICON AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY
App. No. 14/289,728
→
POLISHING COMPOSITION FOR EDGE ROLL-OFF IMPROVEMENT
App. No. 14/269,622
→
MIXED ABRASIVE TUNGSTEN CMP COMPOSITION
App. No. 14/222,716
→
MIXED ABRASIVE TUNGSTEN CMP COMPOSITION
App. No. 14/222,736
→
COMPOSITION FOR TUNGSTEN BUFFING
App. No. 14/222,086
→
COMPOSITION AND METHOD FOR POLISHING POLYSILICON
App. No. 14/209,110
→
COMPOSITION FOR TUNGSTEN CMP
App. No. 14/203,647
→
COMPOSITION FOR TUNGSTEN CMP
App. No. 14/203,693
→
COMPOSITION FOR TUNGSTEN CMP
App. No. 14/203,621
→
POLISHING PAD WITH MULTI-MODAL DISTRIBUTION OF PORE DIAMETERS
App. No. 14/183,894
→
COMPOSITION AND METHOD FOR POLISHING MEMORY HARD DISKS
App. No. 14/156,201
→
HOMOGENEOUS POLISHING PAD FOR EDDY CURRENT END-POINT DETECTION
App. No. 14/152,792
→
CMP COMPOSITIONS AND METHODS FOR SELECTIVE REMOVAL OF SILICON NITRIDE
App. No. 14/100,339
→
Polishing Pad for Eddy Current End-Point Detection
App. No. 14/099,655
→