Polyurethane CMP pads having a high modulus ratio
A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.
1. A chemical-mechanical polishing pad comprising a thermoplastic polyurethane polishing layer having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more.
2. The pad of claim 1 , wherein the ratio is 100 or more.
3. The pad of claim 1 , wherein the thermoplastic polyurethane polishing layer also has a ratio of storage modulus at 40 degrees C. to storage modulus at 80 degrees C. of 50 or more.
4. The pad of claim 1 , wherein the thermoplastic polyurethane polishing layer has a Shore D hardness of 70 or more.
5. The pad of claim 1 , wherein the thermoplastic polyurethane polishing layer has a tensile elongation of 320 percent or less.
6. The pad of claim 1 , wherein the thermoplastic polyurethane polishing layer has a storage modulus at 25 degrees C. of 1000 MPa or more.
7. The pad of claim 1 , wherein the thermoplastic polyurethane polishing layer has a storage modulus at 80 degrees C. of 15 MPa or less.
8. The pad of claim 1 , wherein the pad is non-porous.
9. The pad of claim 1 , wherein the thermoplastic polyurethane has a molecular weight of less than about 100,000 g/mol.
10. The pad of claim 1 , wherein the pad has a density in a range from about 1.1 to about 1.2 g/cm3.
11. A method of chemical mechanical polishing a substrate, the method comprising:
(a) contacting the substrate with the pad of claim 1 ;
(b) moving the pad relative to the substrate; and
(c) abrading the substrate to remove a portion of at least one layer from the substrate and thereby polish the substrate.
12. A method for fabricating the pad of claim 1 , the method comprising:
(a) blending a thermoplastic polyurethane polymer resin mixture;
(b) extruding the mixture to form a solid thermoplastic polyurethane sheet;
(c) forming the polishing pad from the thermoplastic polyurethane sheet.
13. A method of chemical mechanical polishing a substrate; the method comprising:
(a) contacting the substrate with the pad of claim 1 ;
(b) moving the pad relative to the substrate; and
(c) abrading the substrate to remove a portion of at least one layer from the substrate and thereby polish the substrate.
14. A chemical-mechanical polishing pad comprising a thermoplastic polyurethane polishing layer having a storage modulus at 25 degrees C. of 1200 MPa or more and a tensile elongation of 320 percent or less.
15. A chemical-mechanical polishing pad comprising a thermoplastic polyurethane polishing layer having a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1000 MPa or more, and a storage modulus at 80 degrees C. of 20 MPa or less.
16. A chemical-mechanical polishing pad comprising a non-porous thermoplastic polyurethane polishing layer having an average molecular weight of 100,000 g/mol or less, a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and a storage modulus at 80 degrees C. of 15 MPa or less.