IP Library Patent Application 15817959
Patent Application
App. No. 15/817,959

COMPOSITION AND METHOD FOR POLISHING MEMORY HARD DISKS EXHIBITING REDUCED SURFACE SCRATCHING

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Quick Facts
Patent No.
US None
App. No.
15/817,959
Abstract

The invention provides a chemical-mechanical polishing composition comprising (a) wet-process silica, (b) a combination of (i) an alcohol of formula (I) and (ii) an alcohol of formula (II), (c) hydrogen peroxide, (d) a mineral acid, and (e) water, wherein the polishing composition has a pH from about 1 to about 5. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Claims (72)

1 . A chemical-mechanical polishing composition comprising:

(a) wet-process silica,

(b) a combination of

(i) an alcohol of formula (I): R 1 —X—(CH 2 ) m —OH wherein

R 1 is phenyl, pyridyl, HO—(CH 2 ) n —, or C 1 -C 6 alkyl,

m is an integer from 1 to 6,

n is an integer from 1 to 6, and

X is absent or is O, and

(ii) an alcohol of formula (II): R 2 —NR 3 —(CH 2 ) o —OH wherein

R 2 is phenyl, pyridyl, H 2 N—(CH 2 ) p —, or C 1 -C 6 alkyl,

R 3 is hydrogen or C 1 -C 6 alkyl,

o is an integer from 1 to 6, and

p is an integer from 1 to 6,

(c) hydrogen peroxide,

(d) a mineral acid, and

(e) water,

wherein the polishing composition has a pH from about 1 to about 5.

2 . The polishing composition of claim 1 , wherein the wet-process silica has a particle size of about 5 nm to about 25 nm.

3 . The polishing composition of claim 2 , wherein the wet-process silica has a particle size of about 5 nm to about 10 nm.

4 . The polishing composition of claim 1 , wherein the alcohol of formula (I) is phenoxyethanol, ethylene glycol monobutyl ether, or benzyl alcohol.

5 . The polishing composition of claim 4 , wherein the alcohol of formula (I) is phenoxyethanol.

6 . The polishing composition of claim 1 , wherein the alcohol of formula (II) is aminoethylaminoethanol.

7 . The polishing composition of claim 1 , wherein the polishing composition comprises about 1000 ppm to about 10,000 ppm of the alcohol of formula (I) and about 100 ppm to about 1000 ppm of the alcohol of formula (II).

8 . The polishing composition of claim 1 , wherein the polishing composition has a pH of about 1 to about 2.

9 . A method of chemically mechanically polishing a substrate comprising:

(i) providing a substrate,

(ii) providing a polishing pad,

(iii) providing a chemical-mechanical polishing composition comprising:

(a) wet-process silica,

(b) a combination of

(i) an alcohol of formula (I): R 1 —X—(CH 2 ) m —OH wherein

R 1 is phenyl, pyridyl, HO—(CH 2 ) n —, or C 1 -C 6 alkyl,

m is an integer from 1 to 6,

n is an integer from 1 to 6, and

X is absent or is O, and

(ii) an alcohol of formula (II): R 2 —NR 3 —(CH 2 ) o —OH wherein

R 2 is phenyl, pyridyl, H 2 N—(CH 2 ) p —, or C 1 -C 6 alkyl,

R 3 is hydrogen or C 1 -C 6 alkyl,

o is an integer from 1 to 6, and

p is an integer from 1 to 6,

(c) hydrogen peroxide,

(d) a mineral acid, and

(e) water

wherein the polishing composition has a pH from about 1 to about 5

(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and

(v) moving the polishing pad and the chemical mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

10 . The method of claim 9 , wherein the wet-process silica has a particle size of about 5 nm to about 25 nm.

11 . The method of claim 9 , wherein the alcohol of formula (I) is phenoxyethanol, ethylene glycol monobutyl ether, or benzyl alcohol.

12 . The method of claim 9 , wherein the alcohol of formula (II) is aminoethylaminoethanol.

13 . The method of claim 9 , wherein the polishing composition comprises about 1000 ppm to about 10,000 ppm of the alcohol of formula (I) and about 100 ppm to about 1000 ppm of the alcohol of formula (II).

14 . The method of claim 9 , wherein the substrate is a nickel-phosphorous-coated aluminum memory disk, and wherein at least a portion of the nickel-phosphorous is abraded to polish the substrate.

15 . A method of chemically mechanically polishing a substrate comprising:

(i) providing a substrate,

(ii) providing a polishing pad,

(iii) providing a chemical-mechanical polishing composition comprising:

(a) wet-process silica,

(b) an alcohol of formula (III): R 1 —O—(CH 2 ) m —OH wherein

R 1 is phenyl, pyridyl, HO—(CH 2 ) n —, or C 1 -C 6 alkyl,

m is an integer from 1 to 6, and

n is an integer from 1 to 6,

(c) hydrogen peroxide,

(d) a mineral acid, and

(e) water,

wherein the polishing composition has a pH from about 1 to about 5

(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and

(v) moving the polishing pad and the chemical mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

16 . The method of claim 15 , wherein the wet-process silica has a particle size of about 5 nm to about 25 nm.

17 . The method of claim 15 , wherein the alcohol of formula (III) is phenoxyethanol, ethylene glycol monobutyl ether, or benzyl alcohol.

18 . The method of claim 15 , wherein the polishing composition further comprises an alcohol of formula (II): R 2 —NR 3 —(CH 2 ) o —OH wherein R 2 is phenyl, pyridyl, H 2 N—(CH 2 ) p —, or C 1 -C 6 alkyl, R 3 is hydrogen or C 1 -C 6 alkyl, o is an integer from 1 to 6, and p is an integer from 1 to 6.

19 . The method of claim 18 , wherein the alcohol of formula (II) is aminoethylaminoethanol.

20 . The method of claim 18 , wherein the polishing composition comprises about 1000 ppm to about 10,000 ppm of the alcohol of formula (III) and about 100 ppm to about 1000 ppm of the alcohol of formula (II).

21 . The method of claim 15 , wherein the substrate is a nickel-phosphorous-coated aluminum memory disk, and wherein at least a portion of the nickel-phosphorous is abraded to polish the substrate.

Assignments (7)
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 20, 2017
From: ZHANG, KE
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 044180/0081 →