CMP composition and method for polishing rigid disks
The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate, such as a nickel-phosphorous substrate. The composition contains water, silica particles, a first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol, a second alcohol in the form of polyvinyl alcohol, a nickel complexing agent, and optionally hydrogen peroxide, pH adjuster, and/or biocide. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
1. A polishing composition comprising:
(a) silica present in an amount of from about 0.01 wt. % to about 10 wt. %;
(b) first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol;
(c) nickel complexing agent, wherein the nickel complexing agent is one or more of hydroxyethylenediaminetriacetic acid (HEDTA), glycine, oxime and/or dioxime Ni complexer, and any salt thereof;
(d) second alcohol consisting of polyvinyl alcohol; and
(e) water,
wherein the polishing composition has a pH of from about 1 to about 5 and the polyvinyl alcohol has a molecular weight of from about 2,000 g/mol to about 50,000 g/mol.
2. The composition of claim 1 , wherein the polyvinyl alcohol is present in an amount of from about 0.001 wt. % to about 0.2 wt. %.
3. The composition of claim 1 , wherein the first alcohol is one or more of isopropanol (WA), butyl alcohol, ethylene glycol, propylene glycol, diethylene glycol, pentaerythritol, dipentaerytritol, trimethyolpropane, and dipropylene glycol.
4. The composition of claim 3 , wherein the first alcohol is present in an amount of from about 0.05 wt. % to about 20 wt. %.
5. The composition of claim 1 , wherein the nickel complexing agent comprises HEDTA and glycine.
6. The composition of claim 1 , wherein the nickel complexing agent is present in an amount of from about 0.01 wt. % to about 10 wt. %.
7. The composition of claim 1 , wherein the composition further comprises hydrogen peroxide.
8. The composition of claim 7 , wherein the hydrogen peroxide is present in an amount of from about 0.01 wt. % to about 4 wt. %.
9. The composition of claim 1 , wherein the silica has an average particle size of from about 5 nm to about 80 nm.
10. The composition of claim 1 , wherein the silica has an average primary particle size of about 40 nm or less.
11. A polishing composition comprising:
(a) silica present in an amount of from about 0.01 wt. % to about 10 wt. %;
(b) first alcohol having a flash point of at least about 10° C.;
(c) nickel complexing agent;
(d) second alcohol consisting of polyvinyl alcohol;
(e) water, and
wherein the polishing composition has a pH of from about 1 to about 4 and the polyvinyl alcohol is present and has a molecular weight of from about 2,000 g/mol to about 50,000 g/mol.
12. The composition of claim 11 , wherein the first alcohol is present in an amount from about 0.05 wt. % to about 20 wt. %.
13. The composition of claim 11 , wherein the nickel complexing agent comprises one or more of an organic monocarboxylic acid, an organic bicarboxylic acid, an amino carboxylic acid, and any salt thereof.
14. The composition of claim 11 , wherein the composition further comprises hydrogen peroxide.
15. A method of polishing a substrate, which method comprises:
providing a substrate,
(ii) providing a polishing pad,
(iii) providing the polishing composition of claim 1 :
(iv) dispensing the polishing composition and contacting the polishing pad, to a surface of the substrate, and
(v) abrading at least a portion of the surface of the substrate to polish the surface of the substrate.
16. A method of polishing a substrate, which method comprises:
providing a substrate,
(ii) providing a polishing pad,
(iii) providing the polishing composition of claim 11 :
(iv) dispensing the polishing composition and contacting the polishing pad, to a surface of the substrate, and
(v) abrading at least a portion of the surface of the substrate to remove at least some portion of the substrate and to polish the surface of the substrate.
17. The method of claim 16 , wherein the substrate comprises at least one layer of nickel-phosphorous, and at least some nickel-phosphorous is removed from the surface of the substrate to polish the surface of the substrate.
18. The method of claim 16 , wherein the substrate is a nickel-phosphorous coated aluminum memory disk.