IP Library Granted Patent US 9,534,147
Granted Patent B2
US 9,534,147 · App. 14/515,723 · Granted Jan 3, 2017

Polishing composition and method for nickel-phosphorous coated memory disks

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Quick Facts
Patent No.
US 9,534,147
App. No.
14/515,723
Granted
Jan 3, 2017
Kind
B2
Abstract

The invention provides a polishing composition that contains (a) α-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

Claims (27)

1. A chemical-mechanical polishing composition comprising:

(a) α-alumina abrasive particles having an average particle size of about 250 nm to about 300 nm,

(b) sodium persulfate,

(c) a complexing agent, wherein the complexing agent is an amino acid, wherein the amino acid is selected from the group consisting of (hydroxyethyl) ethylene diamine, glycine, and a combination thereof, and

(d) water, and wherein the composition further comprises an amine, wherein the amine is selected from the group consisting of ethylenediamine, triethanolamine, benzylamine, monoethanolamine, and combinations thereof.

2. The composition of claim 1 , further comprising an abrasive selected from the group consisting of substantially spherical alumina particles, colloidal silica particles and combinations thereof.

3. The composition of claim 1 , further comprising α-alumina abrasive particles having an average particle size of about 310 nm to about 390 nm.

4. The composition of claim 1 , wherein the α-alumina particles comprise 0.1 to 1.0 wt. %.

5. The composition of claim 2 , wherein the substantially spherical alumina particles comprise 0.125 wt. % to 0.25 wt. % and the colloidal silica particles comprise 0.15 wt. % to 3.15 wt. %.

6. The composition of claim 3 , wherein the weight ratio of the α-alumina abrasive particles having an average particle size of about 250 nm to about 300 nm to the α-alumina abrasive particles having an average particle size of about 310 nm to about 390 nm is 4:1.

7. The composition of claim 1 , wherein the amine is ethylenediamine.

8. The composition of claim 1 , wherein the complexing agent is (hydroxyethyl) ethylenediamine triacetic acid.

9. A method of polishing a substrate, which method comprises:

(i) providing a substrate,

(ii) providing a polishing pad,

(iii) providing a polishing composition comprising:

(a) α-alumina abrasive particles having an average particle size of about 250 nm to about 300 nm,

(b) sodium persulfate

(c) a complexing agent, wherein the complexing agent is an amino acid, wherein the amino acid is selected from the group consisting of (hydroxyethyl) ethylene diamine, glycine, and a combination thereof, and

(d) water, wherein the pH of the polishing composition is about 1.3 to about 3.0, and wherein the composition further comprises an amine, wherein the amine is selected from the group consisting of ethylenediamine, triethanolamine, benzylamine, monoethanolamine, and combinations thereof,

(iv) contacting a surface of the substrate with the polishing pad and the polishing composition, and

(v) abrading at least a portion of the surface of the substrate to remove at least some portion of the substrate and to polish the surface of the substrate.

10. The method of claim 9 , wherein the substrate comprises nickel phosphate.

11. The method of claim 9 , wherein the composition further comprises a nonionic surfactant.

12. The method of claim 9 , wherein the substrate comprises at least one layer of nickel-phosphorous, and at least some nickel-phosphorous is removed from the surface of the substrate to polish the surface of the substrate.

13. The method of claim 9 , wherein the substrate is a nickel-phosphorous coated aluminum memory disk.

14. The method of claim 9 , wherein the complexing agent is (hydroxyethyl) ethylenediamine triacetic acid.

Assignments (8)
CHANGE OF NAME Recorded Nov 22, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065663/0466 →
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 27, 2015
From: LAU, HON-WU; PALANISAMY CHINNATHAMBI, SELVARAJ; ZHANG, KE
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 034821/0755 →