IP Library Granted Patent US 7,004,819
Granted Patent B2
US 7,004,819 · App. 10/051,241 · Granted Feb 28, 2006

CMP systems and methods utilizing amine-containing polymers

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,004,819
App. No.
10/051,241
Granted
Feb 28, 2006
Kind
B2
Abstract

The invention provides a chemical-mechanical polishing system and method comprising a liquid carrier, a polishing pad and/or an abrasive, and at least one amine-containing polymer, wherein the amine-containing polymer has about 5 or more sequential atoms separating the nitrogen atoms of the amino functional groups or is a block copolymer with at least one polymer block comprising one or more amine functional groups and at least one polymer block not comprising any amine functional groups.

Claims (31)

1. A chemical-mechanical polishing system comprising:

(a) a liquid carrier,

(b) a polishing component selected from the group consisting of (i) a polishing pad, (ii) an abrasive, and (iii) a polishing pad and an abrasive, and

(c) at least one amine-containing polymer with 5 or more sequential atoms separating the nitrogen atoms of the amine functional groups.

2. The system of claim 1 , wherein at least one amine-containing polymer is a condensation polymer comprising repeating units that contain an amino functional group.

3. The system of claim 2 , wherein the condensation polymer is a polyaminoamide.

4. The system of claim 3 , wherein the condensation polymer is a dietylenetriamine/adipic acid condensation polymer.

5. A chemical-mechanical polishing system comprising:

(a) a liquid carrier,

(b) a polishing component selected from the group consisting of (i) a polishing pad, (ii) an abrasive, and (iii) a polishing pad and an abrasive, and

(c) at least one amine-containing polymer with 5 or more sequential atoms separating the nitrogen atoms of the amino functional groups,

wherein at least one amine-containing polymer is polydiallyldimethylammonium chloride.

6. A chemical-mechanical polishing system comprising:

(a) a liquid carrier,

(b) a polishing component selected from the group consisting of (i) a polishing pad, (ii) an abrasive, and (iii) a polishing pad and an abrasive, and

(c) at least one amine-containing polymer with 5 or more sequential atoms separating the nitrogen atoms of the amino functional groups,

wherein at least one amine-containing polymer is a copolymer comprising repeating units containing an amine functional group and repeating units selected from the group consisting of amides, vinyl acetate, ethylene oxide, and propylene oxide.

7. The system of claim 1 , wherein at least one amine-containing polymer has about 7 or more sequential atoms separating the nitrogen atoms of the amino functional groups.

8. The system of claim 1 , wherein at least one amine-containing polymer has about 10 or more sequential atoms separating the nitrogen atoms of the amino functional groups.

9. The system of claim 1 , further comprising a per-type oxidizer.

10. The system of claim 9 , wherein the per-type oxidizer is selected from the group consisting of peroxides, persulfates, periodates, and permanganates.

11. The system of claim 1 , further comprising a complexing agent.

12. A chemical-mechanical polishing system comprising:

(a) a liquid carrier,

(b) a polishing component selected from the group consisting of (i) a polishing pad, (ii) an abrasive, and (iii) a polishing pad and an abrasive, and

(c) at least one amine-containing block copolymer with at least one polymer block comprising one or more amine functional groups and at least one polymer block not comprising any amine functional groups.

13. The system of claim 12 , wherein at least one amine-containing block copolymer is an AB diblock, ABA triblock, or ABC triblock copolymer.

14. The system of claim 12 , wherein the polymer blocks comprising one or more amine functional groups are about 10 wt. % or more of the amine-containing block copolymer.

15. The system of claim 14 , wherein the polymer blocks comprising one or more amine functional groups are about 20 wt. % or more of the amine-containing block copolymer.

16. The system of claim 12 , wherein the polymer block comprising one or more amine functional groups are about 40 wt. % or more of the amine-containing block copolymer.

17. The system of claim 12 , wherein at least one amine-containing block has about 5 or more sequential atoms separating the nitrogen atoms of the amino functional groups.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
RELEASE OF SECURITY INTEREST Recorded Nov 16, 2018
From: BANK OF AMERICA, N.A.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 047587/0119 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
NOTICE OF SECURITY INTEREST IN PATENTS Recorded Feb 16, 2012
From: CABOT MICROELECTRONICS CORPORATION
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 027727/0275 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2002
From: MOEGGENBORG, KEVIN J.; CHERIAN, ISAAC K.; BRUSIC, VLASTA
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 012497/0466 →