Compositions and methods for dielectric CMP
View Patent ↗The invention is directed to a chemical-mechanical polishing composition comprising (a) an abrasive consisting essentially of aggregated silica, (b) an acid, and (c) a liquid carrier, wherein the polishing composition has a pH of about 5 or less. The invention is also directed to a method of polishing a substrate comprising a dielectric layer using the polishing composition.
1. A method of polishing a substrate comprising:
(i) contacting a substrate having a surface area comprising a dielectric layer with a chemical-mechanical polishing composition comprising:
(a) an abrasive consisting essentially of aggregated silica,
(b) an acid, wherein the acid is an anionic polymer or copolymer, and wherein the anionic polymer or copolymer comprises repeating units selected from the group consisting of styrenesulfonic acid, 2-acrylamido-2-methylpropane sulfonic acid, salts thereof, and combinations thereof, and
(c) a liquid carrier,
wherein the dielectric layer comprises about 95% or more of the total surface area of the substrate, and wherein the polishing composition has a pH of about 3 or less, and
(ii) abrading at least a portion of the substrate to polish the dielectric layer.
2. The method of claim 1 , wherein the aggregated silica is fumed silica.
3. The method of claim 1 , wherein the liquid carrier comprises water.
4. The method of claim 1 , wherein the aggregated silica has an average surface area of about 30 m 2 /g to about 70 m 2 /g.
5. The method of claim 4 , wherein the aggregated silica has an average surface area of about 40 m 2 /g to about 60 m 2 /g.
6. The method of claim 5 , wherein the aggregated silica has an average surface area of about 50 m 2 /g.
7. The method of claim 1 , wherein the aggregated silica has a mean particle size of about 100 nm to about 250 nm.
8. The method of claim 1 , wherein the polishing composition comprises about 0.5 wt. % to about 20 wt. % aggregated silica.
9. The method of claim 1 , wherein the dielectric layer comprises a silicon-containing material having a dielectric constant of about 4 or less.
10. The method of claim 9 , wherein the dielectric layer comprises silicon dioxide.
11. The method of claim 10 , wherein the aggregated silica has a blanket silicon dioxide removal rate of about 100 Å/min or greater.
12. The method of claim 9 , wherein the substrate further comprises a silicon nitride layer.
13. The method of claim 1 , wherein the silicon dioxide to silicon nitride polishing selectivity is about 50 or greater.
14. The method of claim 1 , wherein the polishing composition comprises about 0.1 wt. % to about 2 wt. % anionic polymer or copolymer.
15. The method of claim 1 , wherein the polishing composition further comprises an alcohol.
16. A chemical-mechanical polishing composition comprising:
(a) an abrasive consisting essentially of aggregated silica having a surface area of about 30 m 2 /g to about 70 m 2 /g and a particle size of about 100 nm to about 250 nm,
(b) an acid, wherein the acid is an anionic polymer or copolymer, and wherein the anionic polymer or copolymer comprises repeating units selected from the group consisting of styrenesulfonic acid, 2-acrylamido-2-methylpropane sulfonic acid, salts thereof, and combinations thereof, and
(c) a liquid carrier,
wherein the polishing composition has a pH of about 3 or less.
17. The polishing composition of claim 16 , wherein the liquid carrier comprises water.
18. The polishing composition of claim 16 , wherein the aggregated silica has an average surface area of about 40 m 2 /g to about 60 m 2 /g.
19. The polishing composition of claim 18 , wherein the aggregated silica has an average surface area of about 50 m 2 /g.
20. The polishing composition of claim 16 , wherein the aggregated silica is fumed silica.
21. The polishing composition of claim 16 , wherein the composition further comprises an alcohol.
22. The polishing composition of claim 21 , wherein the alcohol is methanol, ethanol, or propanol.