IP Library Granted Patent US 7,485,241
Granted Patent B2
US 7,485,241 · App. 10/660,379 · Granted Feb 3, 2009

Chemical-mechanical polishing composition and method for using the same

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Quick Facts
Patent No.
US 7,485,241
App. No.
10/660,379
Granted
Feb 3, 2009
Kind
B2
Abstract

The invention provides a chemical-mechanical polishing composition comprising: (a) fumed silica particles, (b) about 5×10 −3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5×10 −3 to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.

Claims (46)

1. A chemical-mechanical polishing composition comprising:

(a) fumed silica particles,

(b) about 2.5×10 −2 to about 2.5 mmoles/kg of calcium, about 1×10 −2 to about 1.5 mmoles/kg of strontium, or about 7×10 −3 to about 0.75 mmoles/kg of barium, based on the total weight of the polishing composition,

(c) about 1 to about 15 wt. % of an oxidizing agent, and

(d) a liquid carrier comprising water,

wherein the polishing composition has a pH of about 7 to about 13, and wherein the polishing composition is colloidally stable.

2. The polishing composition of claim 1 , wherein the polishing composition has a pH of about 8 to about 11.

3. The polishing composition of claim 2 , wherein the fumed silica particles are present in the polishing composition in an amount of about 1 to about 10 wt. % based on the total weight of the polishing composition.

4. The polishing composition of claim 3 , wherein the oxidizing agent is an inorganic or organic per-compound.

5. The polishing composition of claim 4 , wherein the oxidizing agent is present in the polishing composition in an amount of about 1 to about 8 wt. % based on the total weight of the polishing composition.

6. The polishing composition of claim 4 , wherein the oxidizing agent is present in the polishing composition in an amount of about 1 to about 5 wt. % based on the total weight of the polishing composition.

7. The polishing composition of claim 4 , wherein the polishing composition further comprises an inorganic acid selected from the group consisting of nitric acid, phosphoric acid, sulfuric acid, salts thereof, and combinations thereof.

8. The polishing composition of claim 4 , wherein the polishing composition further comprises an organic acid selected from the group consisting of oxalic acid, malic acid, malonic acid, tartaric acid, acetic acid, lactic acid, propionic acid, phthalic acid, benzoic acid, citric acid, succinic acid, salts thereof, and combinations thereof.

9. The polishing composition of claim 8 , wherein the polishing composition further comprises a corrosion inhibitor selected from the group consisting of 1,2,3-triazole, 1,2,4-triazole, benzotriazole, benzimidazole, benzothiazole, and mixtures thereof.

10. The polishing composition of claim 9 , wherein the polishing composition further comprises a complexing or chelating agent.

11. The polishing composition of claim 1 , wherein the fumed silica particles are present in the polishing composition in an amount of about 0.1 to about 20 wt. % based on the total weight of the polishing composition.

12. The polishing composition of claim 11 , wherein the fumed silica particles are present in the polishing composition in an amount of about 1 to about 10 wt. % based on the total weight of the polishing composition.

13. The polishing composition of claim 1 , wherein the oxidizing agent is an inorganic or organic per-compound.

14. The polishing composition of claim 1 , wherein the oxidizing agent is present in the polishing composition in an amount of about 1 to about 8 wt. % based on the total weight of the polishing composition.

15. The polishing composition of claim 13 , wherein the oxidizing agent is present in the polishing composition in an amount of about 1 to about 5 wt. % based on the total weight of the polishing composition.

16. The polishing composition of claim 1 , wherein the polishing composition further comprises an acid, and the acid is an inorganic acid selected from the group consisting of nitric acid, phosphoric acid, sulfuric acid, salts thereof, and combinations thereof.

17. The polishing composition of claim 1 , wherein the polishing composition further comprises an acid, and the acid is an organic acid selected from the group consisting of oxalic acid, malic acid, malonic acid, tartaric acid, acetic acid, lactic acid, propionic acid, phthalic acid, benzoic acid, citric acid, succinic acid, salts thereof, and combinations thereof.

18. A chemical-mechanical polishing composition comprising:

(a) fumed silica particles,

(b) about 2.5×10 −2 to about 2.5 mmoles/kg of calcium or about 1×10 −2 to about 1.5 mmoles/kg of strontium, based on the total weight of the polishing composition,

(c) about 1 to about 15 wt. % of an oxidizing agent, and

(d) a liquid carrier comprising water,

wherein the polishing composition has a pH of about 7 to about 13, and wherein the polishing composition is colloidally stable.

19. The polishing composition of claim 18 , wherein the polishing composition has a pH of about 8 to about 11.

20. The polishing composition of claim 19 , wherein the fumed silica particles are present in the polishing composition in an amount of about 1 to about 10 wt. % based on the total weight of the polishing composition.

21. The polishing composition of claim 20 , wherein the oxidizing agent is present in the polishing composition in an amount of about 1 to about 8 wt. % based on the total weight of the polishing composition.

22. The polishing composition of claim 20 , wherein the oxidizing agent is an inorganic or organic per-compound.

23. The polishing composition of claim 22 , wherein the oxidizing agent is present in the polishing composition in an amount of about 1 to about 8 wt. % based on the total weight of the polishing composition.

24. The polishing composition of claim 23 , wherein the oxidizing agent is present in the polishing composition in an amount of about 1 to about 5 wt. % based on the total weight of the polishing composition.

25. The polishing composition of claim 22 , wherein the polishing composition further comprises an inorganic acid selected from the group consisting of nitric acid, phosphoric acid, sulfuric acid, salts thereof, and combinations thereof.

26. The polishing composition of claim 22 , wherein the polishing composition further comprises an organic acid selected from the group consisting of oxalic acid, malic acid, malonic acid, tartaric acid, acetic acid, lactic acid, propionic acid, phthalic acid, benzoic acid, citric acid, succinic acid, salts thereof, and combinations thereof.

27. The polishing composition of claim 26 , wherein the polishing composition further comprises a corrosion inhibitor selected from the group consisting of 1,2,3-triazole, 1,2,4-triazole, benzotriazole, benzimidazole, benzothiazole, and mixtures thereof.

28. The polishing composition of claim 27 , wherein the polishing composition further comprises a complexing or chelating agent.

29. The polishing composition of claim 18 , wherein the fumed silica particles are present in the polishing composition in an amount of about 0.1 to about 20 wt. % based on the total weight of the polishing composition.

30. The polishing composition of claim 29 , wherein the fumed silica particles are present in the polishing composition in an amount of about 1 to about 10 wt. % based on the total weight of the polishing composition.

31. The polishing composition of claim 18 , wherein the oxidizing agent is present in the polishing composition in an amount of about 1 to about 8 wt. % based on the total weight of the polishing composition.

32. The polishing composition of claim 18 , wherein the oxidizing agent is an inorganic or organic per-compound.

33. The polishing composition of claim 31 , wherein the oxidizing agent is present in the polishing composition in an amount of about 1 to about 8 wt. % based on the total weight of the polishing composition.

34. The polishing composition of claim 33 , wherein the oxidizing agent is present in the polishing composition in an amount of about 1 to about 5 wt. % based on the total weight of the polishing composition.

35. The polishing composition of claim 18 , wherein the polishing composition further comprises an acid, and the acid is an inorganic acid selected from the group consisting of nitric acid, phosphoric acid, sulfuric acid, salts thereof, and combinations thereof.

36. The polishing composition of claim 18 , wherein the polishing composition further comprises an acid, and the acid is an organic acid selected from the group consisting of oxalic acid, malic acid, malonic acid, tartaric acid, acetic acid, lactic acid, propionic acid, phthalic acid, benzoic acid, citric acid, succinic acid, salts thereof, and combinations thereof.

Assignments (9)
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
RELEASE OF SECURITY INTEREST Recorded Nov 16, 2018
From: BANK OF AMERICA, N.A.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 047587/0119 →
NOTICE OF SECURITY INTEREST IN PATENTS Recorded Feb 16, 2012
From: CABOT MICROELECTRONICS CORPORATION
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 027727/0275 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2003
From: SCHROEDER, DAVID J.; MOEGGENBORG, KEVIN J.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 014023/0498 →