Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
View Patent ↗The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.
1. A chemical-mechanical polishing system comprising:
(a) an abrasive,
(b) water, and
(c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more and about 2,000,000 or less, wherein the positively-charged polyelectrolyte is a polymer or surfactant comprising positively-charged functional groups, wherein the positively-charged functional groups are selected from the group consisting of primary amines, secondary amines, tertiary amines, quaternary amines, and combinations thereof, and wherein either (1) the positively-charged polyelectrolyte further comprises (i) repeating units comprising functional groups selected from the group consisting of phosphonic acids, phosphonates, sulfates, sulfonic acids, sulfonates, phosphates, carboxylic acids, carboxylates, and mixtures thereof, (ii) repeating units selected from the group consisting of ethylene oxide, propylene oxide, vinyl acetate, and mixtures thereof, or (iii) one or more repeating units comprising functional groups selected from the group consisting of amides, imides, and mixtures thereof, or (2) the positively charged polyelectrolyte is a siloxane polymer or copolymer containing pendant amine groups;
wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte, and wherein the particles that are electrostatically associated with the positively charged polyelectrolyte have a negative zeta potential and are obtained by treating particles having a positive zeta potential with a charge-reversing agent.
2. The chemical-mechanical polishing system of claim 1 , wherein the particles are silica or alumina.
3. The chemical-mechanical polishing system of claim 2 , wherein about 5% or more of all the functional groups of the positively charged polyelectrolyte are positively charged.
4. A method of polishing a substrate comprising contacting a substrate with the chemical-mechanical polishing system of claim 2 and abrading at least a portion of the substrate to polish the substrate.
5. The method of claim 4 , wherein the substrate comprises a metallic layer comprising copper, tungsten, titanium, aluminum, tantalum, platinum, ruthenium, rhodium, iridium, nickel, iron, or cobalt.
6. The method of claim 4 , wherein the substrate comprises an insulating layer comprising silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, aluminum oxide, or a material with a dielectric constant of about 3.5 or less.
7. The chemical-mechanical polishing system of claim 2 , wherein the abrasive is present in the chemical-mechanical polishing system in an amount of about 0.05 wt. % to about 8 wt. %.
8. The chemical-mechanical polishing system of claim 2 , wherein the chemical-mechanical polishing system further comprises an oxidizing agent.
9. The chemical-mechanical polishing system of claim 2 , wherein the chemical-mechanical polishing system further comprises a corrosion inhibitor.
10. The chemical-mechanical polishing system of claim 2 , wherein the particles are silica.
11. The chemical-mechanical polishing system of claim 2 , wherein the particles are alumina.
12. The method of claim 5 , wherein the substrate comprises copper, and the chemical-mechanical polishing system has a pH of about 7 or less.
13. The method of claim 12 , wherein the chemical-mechanical polishing system has a pH of about 3 to about 6.
14. The method of claim 5 , wherein the substrate comprises platinum, and the chemical-mechanical polishing system has a pH of about 2 to about 7.
15. The method of claim 5 , wherein the substrate comprises ruthenium, and the chemical-mechanical polishing system has a pH of about 5 or more.
16. The method of claim 15 , wherein the chemical-mechanical polishing system has a pH of about 7 to about 11.
17. The method of claim 5 , wherein the substrate comprises iridium, and the chemical-mechanical polishing system has a pH of about 5 to about 12.
18. The method of claim 17 , wherein the chemical-mechanical polishing system has a pH of about 7 to about 9.