Metal ion-containing CMP composition and method for using the same
View Patent ↗The invention provides a chemical-mechanical polishing composition comprising an abrasive, metal ions (M) having a M-O—Si bond energy equal to or greater than about 3 kcal/mol, and water. The invention further provides a method for polishing a substrate using the aforementioned chemical-mechanical polishing composition.
1. A chemical-mechanical polishing composition consisting essentially of:
(a) about 0.1 wt. % to about 20 wt. % of an abrasive consisting of ceria,
(b) Al 3+ ions, wherein the concentration of Al 3+ ions is about 0.25 mM to about 5 mM,
(c) an organic acid, and
(d) a liquid carrier, wherein the chemical-mechanical polishing composition has a pH of about 3 to about 5.7.
2. The chemical-mechanical polishing composition of claim 1 , wherein the source of the Al 3+ ions is provided in the form of an aluminum salt.
3. The chemical-mechanical polishing composition of claim 2 , wherein the aluminum salt is an aluminum chloride salt.
4. The chemical-mechanical polishing composition of claim 1 , wherein the concentration of Al 3+ ions is from about 0.25 mM to about 2 mM.
5. The chemical-mechanical polishing composition of claim 1 , wherein the concentration of Al 3+ ions is about 0.25 mM to about 1 mM.
6. The chemical-mechanical polishing composition of claim 1 , wherein the concentration of Al 3+ ions is about 0.25 mM to about 1.5 mM.
7. The chemical-mechanical polishing composition of claim 1 , wherein the concentration of Al 3+ ions is about 0.25 mM to about 0.5 mM.
8. The chemical-mechanical polishing composition of claim 1 , wherein the concentration of Al 3+ ions is about 0.25 mM to about 0.4 mM.
9. A chemical-mechanical polishing composition consisting essentially of:
(a) about 0.1 wt. % to about 20 wt. % of an abrasive consisting of ceria,
(b) Al 3+ ions, wherein the concentration of Al 3+ ions is about 0.25 mM to about 5 mM,
(c) an organic acid,
(d) a liquid carrier, and
(e) a biocide,
wherein the chemical-mechanical polishing composition has a pH of about 3 to about 5.7.
10. A method of polishing a substrate comprising the steps of:
(a) providing a substrate,
(b) providing a chemical-mechanical polishing composition consisting essentially of:
about 0.1 wt. % to about 20 wt. % of an abrasive consisting of ceria,
(ii) Al 3+ ions, wherein the concentration of Al 3+ ions is about 0.25 mM to about 5 mM,
(iii) an organic acid, and
(iv) a liquid carrier, wherein the chemical-mechanical polishing composition has a pH of about 3 to about 5.7,
(c) applying the chemical-mechanical polishing composition to at least a portion of the substrate, and
(d) abrading at least a portion of the substrate with the chemical-mechanical polishing composition to polish the substrate.
11. The method of claim 10 , wherein the Al 3+ ions are provided in the form of an aluminum salt.
12. The method of claim 11 , wherein the aluminum salt is an aluminum chloride salt.
13. The method of claim 10 , wherein the concentration of Al 3+ ions is from about 0.25 mM to about 2 mM.
14. The method of claim 10 , wherein the concentration of Al 3+ ions is about 0.25 mM to about 1 mM.
15. The method of claim 10 , wherein the concentration of Al 3+ ions is about 0.25 mM to about 1.5 mM.
16. The method of claim 10 , wherein the concentration of aluminum ions is about 0.25 mM to about 0.5 mM.
17. The method of claim 10 , wherein the concentration of Al 3+ ions is about 0.25 mM to about 0.4 mM.
18. The method of claim 10 , wherein the substrate comprises a first metal layer disposed on a second layer.
19. A method of polishing a substrate comprising the steps of:
(a) providing a substrate,
(b) providing a chemical-mechanical polishing composition consisting essentially of:
(i) about 0.1 wt. % to about 20 wt. % of an abrasive consisting of ceria,
(ii) Al 3+ ions, wherein the concentration of Al 3+ ions is about 0.25 mM to about 5 mM,
(iii) an organic acid,
(iv) a liquid carrier, and
(v) a biocide,
wherein the chemical-mechanical polishing composition has a pH of about 3 to about 5.7,
(c) applying the chemical-mechanical polishing composition to at least a portion of the substrate, and
(d) abrading at least a portion of the substrate with the chemical-mechanical polishing composition to polish the substrate.