IP Library Granted Patent US 7,059,936
Granted Patent B2
US 7,059,936 · App. 10/807,079 · Granted Jun 13, 2006

Low surface energy CMP pad

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Quick Facts
Patent No.
US 7,059,936
App. No.
10/807,079
Granted
Jun 13, 2006
Kind
B2
Abstract

The invention provides a polishing pad substrate comprising a copolymer, wherein the copolymer has at least one hydrophilic repeat unit and at least one hydrophobic repeat unit. The invention also provides a polishing pad substrate comprising a polymer, wherein the polymer is a modified polymer having at least one hydrophilic unit and at least one hydrophobic unit attached to the polymer chain. The invention further provides a method of polishing a workpiece comprising (i) providing a workpiece to be polished, (ii) contacting the workpiece with a chemical-mechanical polishing system comprising the polishing pad substrate of the invention, and (iii) abrading at least a portion of the surface of the workpiece with the polishing system to polish the workpiece.

Claims (40)

1. A polishing pad substrate for use in chemical-mechanical polishing comprising a copolymer, wherein the copolymer has at least one hydrophilic repeat unit and at least one hydrophobic repeat unit, and wherein the polishing pad substrate has a surface energy of about 34 mN/m or less.

2. The polishing pad substrate of claim 1 , wherein the hydrophilic repeat unit is selected from the group consisting of esters, ethers, acrylic acids, acrylamides, amides, imides, vinylalcohols, vinylacetates, acrylates, methacrylates, sulfones, urethanes, vinylchlorides, etheretherketones, carbonates, and oligomers and combinations thereof.

3. The polishing pad substrate of claim 1 , wherein the hydrophilic repeat unit is urethane.

4. The polishing pad substrate of claim substrate 1 , wherein the hydrophobic repeat unit is selected from the group consisting of fluorocarbons, tetrafluoroethylenes, vinylfluorides, siloxanes, dimethylsiloxanes, butadiene, ethylene, olefins, styrene, propylene, and oligomers and combinations thereof.

5. The polishing pad substrate of claim 1 , wherein the hydrophobic repeat unit is fluorocarbon or siloxane.

6. The polishing pad substrate of claim 1 , wherein the polishing pad substrate is a solid, non-porous polishing pad substrate.

7. The polishing pad substrate of claim 1 , wherein the polishing pad substrate has a density of about 90% or more of the maximum theoretical density of the copolymer.

8. The polishing pad substrate of claim 1 , wherein the polishing pad substrate is a porous polishing pad substrate.

9. The polishing pad substrate of claim 8 , wherein the polishing pad substrate has a density of about 70% or less of the maximum theoretical density of the copolymer.

10. The polishing pad substrate of claim 8 , wherein the polishing pad substrate has a void volume of about 75% or less.

11. The polishing pad substrate of claim 1 , wherein the polishing pad substrate is a polishing layer.

12. The polishing pad substrate of claim 11 , wherein the polishing layer further comprises grooves.

13. The polishing pad substrate of claim 1 , wherein the polishing pad substrate is a subpad.

14. The polishing pad substrate of claim 1 , wherein the polishing pad substrate further comprises an optically transmissive region.

15. The polishing pad substrate of claim 14 , wherein the optically transmissive region has a light transmission of at least 10% at one or more wavelengths between from about 190 nm to about 3500 nm.

16. The polishing pad substrate of claim 14 , wherein the optically transmissive region comprises the copolymer.

17. The polishing pad substrate of claim 1 , wherein the polishing pad substrate further comprises abrasive particles.

18. The polishing pad substrate of claim 17 , wherein the abrasive particles comprise metal oxide selected from the group consisting of alumina, silica, titania, ceria, zirconia, germania, magnesia, co-formed products thereof, and combinations thereof.

19. A polishing pad substrate for use in chemical-mechanical polishing comprising a polymer, wherein the polymer has at least one hydrophilic unit and at least one hydrophobic unit attached to the polymer chain, and wherein the polishing pad substrate has a surface energy of about 34 mN/m or less.

20. The polishing pad substrate of claim 19 , wherein the polymer is a thermoplastic polymer or a thermoset polymer.

21. The polishing pad substrate of claim 20 , wherein the thermoplastic polymer or the thermoset polymer is selected from the group consisting of polyurethanes, polyolefins, polyvinylalcohols, polyvinylacetates, polycarbonates, polyacrylic acids, polyacrylamides, polyethylenes, polypropylenes, nylons, fluorocarbons, polyesters, polyethers, polyamides, polyimides, polytetrafluoroethylenes, polyetheretherketones, copolymers thereof, and mixtures thereof.

22. The polishing pad substrate of claim 21 , wherein the thermoplastic polymer or the thermoset polymer is selected from the group consisting of polyurethanes and polyolefins.

23. The polishing pad substrate of claim 19 , wherein the hydrophilic unit is selected from the group consisting of esters, ethers, acrylic acids, acrylamides, amides, imides, vinylalcohols, vinylacetates, acrylates, methacrylates, sulfones, urethanes, vinylchlorides, etheretherketones, carbonates, and oligomers and combinations thereof.

24. The polishing pad substrate of claim 19 , wherein the hydrophilic unit is urethane.

25. The polishing pad substrate of claim substrate 19 , wherein the hydrophobic unit is selected from the group consisting of fluorocarbons, tetrafluoroethylenes,vinylfluorides, siloxanes, dimethylsiloxanes, butadiene, ethylene, olefins, styrene, propylene, and oligomers and combinations thereof.

26. The polishing pad substrate of claim 19 , wherein the hydrophobic unit is fluorocarbon or siloxane.

27. The polishing pad substrate of claim 19 , wherein the at least one hydrophilic unit and the at least one hydrophobic unit are attached to a terminal repeat unit of the polymer chain.

28. The polishing pad substrate of claim 19 , wherein the polishing pad substrate is a solid, non-porous polishing pad substrate.

29. The polishing pad substrate of claim 19 , wherein the polishing pad substrate has a density of about 90% or more of the maximum theoretical density of the copolymer.

30. The polishing pad substrate of claim 19 , wherein the polishing pad substrate is a porous polishing pad substrate.

31. The polishing pad substrate of claim 30 , wherein the polishing pad substrate has a density of about 70% or less of the maximum theoretical density of the polymer.

32. The polishing pad substrate of claim 30 , wherein the polishing pad substrate has a void volume of about 75% or less.

33. The polishing pad substrate of claim 19 , wherein the polishing pad substrate is a polishing layer.

34. The polishing pad substrate of claim 33 , wherein the polishing layer further comprises grooves.

35. The polishing pad substrate of claim 19 , wherein the polishing pad substrate is a subpad.

36. The polishing pad substrate of claim 19 , wherein the polishing pad substrate further comprises an optically transmissive region.

37. The polishing pad substrate of claim 36 , wherein the optically transmissive region has a light transmission of at least 10% at one or more wavelengths between from about 190 nm to about 3500 nm.

38. The polishing pad substrate of claim 36 , wherein the optically transmissive region comprises the polymer having at least one hydrophilic unit and at least one hydrophobic unit attached to the polymer chain.

39. The polishing pad substrate of claim 19 , wherein the polishing pad substrate further comprises abrasive particles.

40. The polishing pad substrate of claim 39 , wherein the abrasive particles comprise metal oxide selected from the group consisting of alumina, silica, titania, ceria, zirconia, germania, magnesia, co-formed products thereof, and combinations thereof.

Assignments (10)
CHANGE OF NAME Recorded Nov 22, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065663/0466 →
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
RELEASE OF SECURITY INTEREST Recorded Nov 16, 2018
From: BANK OF AMERICA, N.A.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 047587/0119 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
NOTICE OF SECURITY INTEREST IN PATENTS Recorded Feb 16, 2012
From: CABOT MICROELECTRONICS CORPORATION
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 027727/0275 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 13, 2004
From: PRASAD, ABANESHWAR
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 014513/0637 →