COMPOSITIONS AND METHODS FOR CMP OF SEMICONDUCTOR MATERIALS

1 . A chemical-mechanical polishing (CMP) composition comprising:

(a) about 0.1 to about 15 percent by weight of a particulate abrasive material;

(b) about 10 to about 5000 parts per million (ppm) of at least one organic amino compound;

(c) about 10 to about 5000 ppm of at least one acidic metal complexing agent; and

(d) an aqueous carrier therefor;

the composition having a neutral or basic pH.

2 . The CMP composition of claim 1 wherein the particulate abrasive material is present in the composition in an amount in the range of about 3 to about 6 percent by weight.

3 . The CMP composition of claim 1 wherein the particulate abrasive material comprises silica.

4 . The CMP composition of claim 1 wherein the at least one organic amino compound comprises an amino alcohol compound, an alkoxylated amino compound, a polyamino compound, a quaternary ammonium hydroxide, a salt thereof, or a combination of two or more of the foregoing.

5 . The CMP composition of claim 1 wherein the at least one organic amino compound comprises 2-dimethylamino-2-methylpropanol, a salt thereof, or a combination thereof.

6 . The CMP composition of claim 1 wherein at least one organic amino compound is present in the composition in an amount in the range of about 50 to about 2000 ppm.

7 . The CMP composition of claim 1 wherein at least one organic amino compound is present in the composition in an amount in the range of about 100 to about 1000 ppm.

8 . The CMP composition of claim 1 wherein the at least one acidic metal complexing agent is selected from the group consisting of phosphoric acid, a dicarboxylic acid, a polycarboxylic acid, a phosphonic acid, a salt thereof, and a combination of two or more of the foregoing.

9 . The CMP composition of claim I wherein the at least one acidic metal complexing agent is present in the composition in an amount in the range of about 100 to about 500 ppm.

10 . The CMP composition of claim I further comprising a biocidal amount of a biocide.

11 . A chemical-mechanical polishing (CMP) composition comprising:

(a) about 3 to about 6 percent by weight of amorphous silica;

(b) about 100 to about 1000 parts per million (ppm) of 2-dimethylamino-2-methylpropanol, a salt thereof, or a combination thereof;

(c) about 100 to about 500 ppm of at least one acidic metal complexing agent selected from the group consisting of phosphoric acid, a dicarboxylic acid, a polycarboxylic acid, a phosphonic acid, a salt thereof, and a combination of two or more of the foregoing; and

(d) an aqueous carrier therefor;

the composition having a neutral or basic pH.

12 . A chemical-mechanical polishing (CMP) method for polishing a semiconductor substrate, the method comprising the steps of:

(a) contacting a surface of a semiconductor substrate with a polishing pad and an aqueous CMP composition, the CMP composition having a neutral or basic pH and comprising about 0.1 to about 15 percent by weight of a particulate abrasive material, about 10 to about 5000 parts per million (ppm) of at least one organic amino compound, about 10 to about 5000 ppm of at least one acidic metal complexing agent, and an aqueous carrier therefor; and

(b) causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface between the pad and the substrate for a time period sufficient to abrade at least a portion of the semiconductor surface.

13 . The CMP method of claim 12 wherein the particulate abrasive material is present in the composition in an amount in the range of about 3 to about 6 percent by weight.

14 . The CMP method of claim 12 wherein the particulate abrasive material comprises silica.

15 . The CMP method of claim 12 wherein the at least one organic amino compound comprises an amino alcohol compound, an alkoxylated amino compound, a polyamino compound, a quaternary ammonium hydroxide, a salt thereof, or a combination of two or more of the foregoing.

16 . The CMP method of claim 12 wherein the at least one organic amino compound comprises 2-dimethylamino-2-methylpropanol, a salt thereof, or a combination thereof.

17 . The CMP method of claim 12 wherein at least one organic amino compound is present in the composition in an amount in the range of about 50 to about 2000 ppm.

18 . The CMP method of claim 12 wherein at least one organic amino compound is present in the composition in an amount in the range of about 100 to about 1000 ppm.

19 . The CMP method of claim 12 wherein the at least one acidic metal complexing agent is selected from the group consisting of phosphoric acid, a dicarboxylic acid, a polycarboxylic acid, a phosphonic acid, a salt thereof, and a combination of two or more of the foregoing.

20 . The CMP method of claim 12 wherein the at least one acidic metal complexing agent is present in the composition in an amount in the range of about 100 to about 500 ppm.

21 . The method of claim 12 wherein the substrate comprises polysilicon, silicon nitride, and silicon oxide.

22 . A chemical-mechanical polishing (CMP) method for selecting relative removal rates of polysilicon, silicon nitride and silicon oxide in CMP of a substrate, the method comprising the steps of:

(a) polishing semiconductor substrates comprising polysilicon and silicon oxide with a predetermined concentration of an aqueous CMP composition of claim 1 , the CMP composition including a predetermined concentration of abrasive sufficient to achieve a desired silicon nitride level during CMP of a silicon nitride substrate;

(b) determining removal rates for polysilicon and silicon oxide achieved during step (a);

(c) polishing semiconductor substrates comprising polysilicon and silicon oxide using a different concentration of the CMP composition than the concentration used in step (a);

(d) determining removal rates for polysilicon and silicon oxide achieved during step (c); and

(e) repeating steps (c) and (d) as needed, using different concentrations of the CMP composition, until a desired relative rate of polysilicon removal, silicone oxide removal, and silicon nitride removal is obtained.