CMP porous pad with component-filled pores

1. A chemical-mechanical polishing pad comprising a polymeric material and a component selected from a liquid, a solid, or a mixture thereof, wherein the polymeric material has pores and the component is disposed within about 70% or more of the pores located within about 1000 μm or less of the surface of the polishing pad.

2. The polishing pad of claim 1 , wherein the polymeric material is a thermoplastic polymer or a thermoset polymer.

3. The polishing pad of claim 2 , wherein the thermoplastic polymer or the thermoset polymer is selected from the group consisting of polyurethaxies, polyolefins, polyvinylalcohols, polyvinylacetates, polycarbonates, polyacrylic acids, polyacrylamides, polyethylenes, polypropylenes, nylons, fluorocarbons, polyesters, polyethers, polyamides, polyimides, polytetrafluoroethylenes, polyetheretherketones, copolymers thereof, and mixtures thereof.

4. The polishing pad of claim 3 , wherein the thermoplastic polymer or the thermoset polymer is selected from the group consisting of polyurethanes and polyolefins.

5. The polishing pad of claim 1 , wherein the component is a liquid.

6. The polishing pad of claim 5 , wherein the liquid is a solution comprising a solvent and a solute.

7. The polishing pad of claim 6 , wherein the solution comprises at least two solution phases.

8. The polishing pad of claim 7 , wherein the solution comprises at least two solution phases at about 40° C. or less.

9. The polishing pad of claim 6 , wherein the solution comprises one solution phase.

10. The polishing pad of claim 9 , wherein the solution comprises one solution phase at about 40° C. or less.

11. The polishing pad of claim 6 , wherein the solution is a thermoreversible gel.

12. The polishing pad of claim 11 , wherein the thermoreversible gel comprises polyethylene and xylene.

13. The polishing pad of claim 1 , wherein the component is a solid.

14. The polishing pad of claim 13 , wherein the solid consists essentially of particles having a largest diameter of about 1 μm or less.

15. The polishing pad of claim 13 , wherein the solid is conductive.

16. The polishing pad of claim 13 , wherein the solid consists essentially of abrasive particles.

17. The polishing pad of claim 16 , wherein the abrasive particles comprise metal oxide selected from the group consisting of alumina, silica, titania, ceria, zirconia, germania, magnesia, co-formed products thereof, and combinations thereof.

18. The polishing pad of claim 1 , wherein the polishing pad has a density of about 2 g/cm 3 or less.

19. The polishing pad of claim 1 , wherein the polishing pad has a void volume of about 75% or less.

20. The polishing pad of claim 1 , wherein the polishing pad has a pore density of about 10 pores/cm 3 or greater.

21. The polishing pad of claim 1 , wherein the average pore diameter is from about 0.1 μm to about 5000 μm.

22. The polishing pad of claim 1 , wherein the polishing pad further comprises a polishing surface comprising grooves.

23. The polishing pad of claim 1 , wherein the polishing pad further comprises an optically transmissive region.

24. The polishing pad of claim 23 , wherein the optically transmissive region has a light transmission of at least 10% at one or more wavelengths between from about 190 nm to about 3500 nm.

25. The polishing pad of claim 1 , wherein the polishing pad further comprises abrasive particles.

26. The polishing pad of claim 25 , wherein the abrasive particles comprise metal oxide selected from the group consisting of alumina, silica, titania, ceria, zirconia, gennania, magnesia, co-formed products thereof, and combinations thereof.

27. The polishing pad of claim 1 , wherein the pores comprise about 70% or more open-celled pores.

28. The polishing pad of claim 1 , wherein the pores comprises about 70% or more closed-celled pores.

29. The polishing pad of claim 1 , wherein the polishing pad has a fast surface, an opposing second surface, and a thickness between the first and second surfaces, wherein at least some of the pores are located within a first region of the polishing pad defined by the first surface and about 10% or less of the thickness of the polishing pad, and wherein the component is disposed within about 70% or more of the void volume of the pores within the first region.

30. The polishing pad of claim 29 , wherein at least some of the pores are located within a second region of the polishing pad defined by the second surface and about 10% or less of the thickness of the polishing pad and wherein the component is disposed within about 70% or more of the void volume of the pores within the second region.

31. The polishing pad of claim 29 , wherein the first region has a volume of about 10 cm 3 or less.

32. The polishing pad of claim 30 , wherein the second region has a volume of about 10 cm 3 or less.