CMP composition comprising surfactant
View Patent ↗The invention provides a polishing composition comprising fumed alumina, alpha alumina, silica, a nonionic surfactant, a metal chelating organic acid, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, and abrading at least a portion of the substrate to polish the substrate.
1. A polishing composition comprising:
(a) about 0.2 to about 1 wt. % of fumed alumina,
(b) about 0.1 to about 1 wt. % of alpha alumina,
(c) about 0.1 to about 4 wt. % of silica, wherein the silica is colloidal silica,
(d) about 10 to about 1000 ppm of a nonionic surfactant,
(e) a metal chelating organic acid,
(f) an oxidizing agent selected from the group consisting of hydrogen peroxide, urea hydrogen peroxide, peroxysulfuric acid, peroxyacetic acid, perboric acid, salts thereof, and combinations thereof, and
(g) a liquid carrier.
2. The polishing composition of claim 1 , wherein the nonionic surfactant is selected from the group of copolymer surfactants comprising siloxane units, ethylene oxide units, and propylene oxide units.
3. The polishing composition of claim 1 , wherein the nonionic surfactant is selected from the group of acrylic acid containing polymers.
4. The polishing composition of claim 1 , wherein the nonionic surfactant is selected from the group of linear polymers of ethylene oxide comprising a perfluorinated alkyl chain at one terminus and a hydroxyl group or alkyl group at the other terminus.
5. The polishing composition of claim 1 , wherein the nonionic surfactant is selected from the group of copolymers of ethylenediamine with ethylene oxide units and propylene oxide units.
6. The polishing composition of claim 1 , wherein the metal chelating organic acid is selected from the group consisting of malonic acid, succinic acid, adipic acid, lactic acid, maleic acid, malic acid, citric acid, glycine, aspartic acid, tartaric acid, gluconic acid, iminodiacetic acid, and fumaric acid.
7. The polishing composition of claim 1 , wherein the liquid carrier comprises water.
8. The polishing composition of claim 7 , wherein the pH of the polishing composition is about 1 to about 7.
9. The polishing composition of claim 8 , wherein the pH of the polishing composition is about 2 to about 5.
10. The polishing composition of claim 1 , wherein the oxidizing agent is hydrogen peroxide.
11. The polishing composition of claim 1 comprising:
(a) about 0.2 to about 1 wt. % of fumed alumina,
(b) about 0.1 to about 1 wt. % of alpha alumina,
(c) about 0.1 to about 4 wt. % of colloidal silica,
(d) about 10 to about 1000 ppm of a nonionic surfactant, wherein the nonionic surfactant is selected from the group of copolymer surfactants comprising siloxane units, ethylene oxide units, and propylene oxide units,
(e) a metal chelating organic acid,
(f) an oxidizing agent selected from the group consisting of hydrogen peroxide, urea hydrogen peroxide, peroxysulfuric acid, peroxyacetic acid, perboric acid, salts thereof, and combinations thereof, and
(g) a liquid carrier, wherein the liquid carrier is water, wherein the pH of the polishing composition is about 2 to about 5.
12. The polishing composition of claim 1 comprising:
(a) about 0.2 to about 1 wt. % of fumed alumina,
(b) about 0.1 to about 1 wt. % of alpha alumina,
(c) about 0.1 to about 4 wt. % of colloidal silica,
(d) about 10 to about 1000 ppm of a nonionic surfactant, wherein the nonionic surfactant is selected from the group of copolymers of ethylenediamine with ethylene oxide units and propylene oxide units,
(e) a metal chelating organic acid, wherein the metal chelating organic acid is tartaric acid,
(f) hydrogen peroxide, and
(g) a liquid carrier, wherein the liquid carrier is water, wherein the pH of the polishing composition is about 2 to about 5.
13. A method of chemically-mechanically polishing a substrate comprising:
(i) contacting a substrate with a polishing pad and a chemical-mechanical polishing composition comprising:
(a) about 0.2 to about 1 wt. % of fumed alumina,
(b) about 0.1 to about 1 wt. % of alpha alumina,
(c) about 0.1 to about 4 wt. % of silica, wherein the silica is colloidal silica,
(d) about 10 to about 1000 ppm of a nonionic surfactant,
(e) a metal chelating organic acid,
(f) an oxidizing agent selected from the group consisting of hydrogen peroxide, urea hydrogen peroxide, peroxysulfuric acid, peroxyacetic acid, perboric acid, salts thereof, and combinations thereof, and
(g) a liquid carrier,
(ii) moving the polishing pad relative to the substrate with the chemical-mechanical polishing composition therebetween, and
(iii) abrading at least a portion of the substrate to polish the substrate.
14. The method of claim 13 , wherein the nonionic surfactant is selected from the group of copolymer surfactants comprising siloxane units, ethylene oxide units, and propylene oxide units.
15. The method of claim 13 , wherein the nonionic surfactant is selected from the group of terpolymers of acrylic esters.
16. The method of claim 13 , wherein the nonionic surfactant is selected from the group of linear polymers of ethylene oxide comprising a perfluorinated alkyl chain at one terminus and a hydroxyl group or alkyl group at the other terminus.
17. The method of claim 13 , wherein the nonionic surfactant is selected from the group of copolymers of ethylenediamine with ethylene oxide units and propylene oxide units.
18. The method of claim 13 , wherein the metal chelating organic acid is selected from the group consisting of malonic acid, succinic acid, adipic acid, lactic acid, malic acid, citric acid, glycine, aspartic acid, tartaric acid, gluconic acid, iminodiacetic acid, and fumaric acid.
19. The method of claim 13 , wherein the liquid carrier comprises water.
20. The method of claim 19 , wherein the pH of the polishing composition is about 1 to about 7.
21. The method of claim 20 , wherein the pH of the polishing composition is about 2 to about 5.
22. The method of claim 13 , wherein the oxidizing agent is hydrogen peroxide.
23. The method of claim 13 , wherein the chemical-mechanical polishing composition comprises:
(a) about 0.2 to about 1 wt. % of fumed alumina,
(b) about 0.1 to about 1 wt. % of alpha alumina,
(c) about 0.1 to about 4 wt. % of colloidal silica,
(d) about 10 to about 1000 ppm of a nonionic surfactant, wherein the nonionic surfactant is selected from the group of copolymer surfactants comprising siloxane units, ethylene oxide units, and propylene oxide units,
(e) a metal chelating organic acid, wherein the metal chelating organic acid is tartaric acid,
(f) an oxidizing agent selected from the group consisting of hydrogen peroxide, urea hydrogen peroxide, peroxysulfuric acid, peroxyacetic acid, perboric acid, salts, thereof, and combinations thereof, and
(g) water, wherein the pH of the polishing composition is about 2 to about 5.
24. The method of claim 13 , wherein the chemical-mechanical polishing composition comprises:
(a) about 0.2 to about 1 wt. % of fumed alumina,
(b) about 0.1 to about 1 wt. % of alpha alumina,
(c) about 0.1 to about 4 wt. % of colloidal silica,
(d) about 10 to about 1000 ppm of a nonionic surfactant selected from the group of copolymers of ethylenediamine with ethylene oxide units and propylene oxide units,
(e) a metal chelating organic acid, wherein the metal chelating organic acid is tartaric acid,
(f) hydrogen peroxide, and
(g) a liquid carrier, wherein the liquid carrier is water, wherein the pH of the polishing composition is about 2 to about 5.
25. The method of claim 13 , wherein the substrate comprises nickel-phosphorus.
26. The method of claim 13 , wherein the substrate is a memory or rigid disc.