IP Library Granted Patent US 7,255,810
Granted Patent B2
US 7,255,810 · App. 10/755,154 · Granted Aug 14, 2007

Polishing system comprising a highly branched polymer

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Quick Facts
Patent No.
US 7,255,810
App. No.
10/755,154
Granted
Aug 14, 2007
Kind
B2
Abstract

The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an abrasive, or a combination thereof.

Claims (28)

1. A polishing system comprising:

(a) a liquid carrier,

(b) a branched polymer having a degree of branching of about 50% or greater, and

(c) a polishing pad, an abrasive, or a combination thereof.

2. The polishing system of claim 1 , wherein the degree of branching is about 60% or greater.

3. The polishing system of claim 2 , wherein the degree of branching is about 70% or greater.

4. The polishing system of claim 1 , wherein the branched polymer is selected from the group consisting of dendritic polymers, comb polymers, bottle-brush polymers, linear-dendrimer diblock copolymers, linear-dendrimer triblock copolymers, random-branched polymers, copolymers thereof, and combinations thereof.

5. The polishing system of claim 4 , wherein the branched polymer is a linear-dendrimer diblock copolymer.

6. The polishing system of claim 5 , wherein the linear-dendrimer diblock copolymer is a polyethylene oxide-polyamidoamine (PEO-PAMAM) diblock copolymer.

7. The polishing system of claim 4 , wherein the branched polymer is a linear-dendrimer triblock copolymer.

8. The polishing system of claim 7 , wherein the linear-dendrimer triblock copolymer is a polyethylene oxide-polypropylene oxide-polyamidoamine triblock copolymer.

9. The polishing system of claim 4 , wherein the branched polymer is a dendritic polymer.

10. The polishing system of claim 9 , wherein the dendritic polymer comprises a core monomer selected from the group consisting of a C 1-8 heterocyclic ring, a C 1-8 carbocyclic ring, a C 1-8 alkane, and a C 1-8 aminoalkane.

11. The polishing system of claim 9 , wherein the dendritic polymer branches from a nitrogen atom.

12. The polishing system of claim 9 , wherein the dendritic polymer comprises about 2 to about 10 generations.

13. The polishing system of claim 1 , wherein the branched polymer is a polyamidoamine (PAMAM) polymer.

14. The polishing system of claim 1 , wherein the branched polymer is a polyglycerol.

15. The polishing system of claim 1 , wherein the branched polymer comprises surface functional groups selected from the group consisting of amines, amides, carboxylic acids, sulfonic acids, phosphonic acids, hydroxyl groups, salts thereof, and combinations thereof.

16. The polishing system of claim 1 , wherein the branched polymer has a molecular weight of about 1,000 to about 1,000,000 g/mol.

17. The polishing system of claim 16 , wherein the molecular weight is about 2,000 to about 500,000 g/mol.

18. The polishing system of claim 1 , wherein the branched polymer comprises a highly branched core comprising monomers, wherein about 50% or more of the monomers within the highly branched core are branched.

19. The polishing system of claim 1 , wherein the branched polymer has a viscosity that is about 70% or less the viscosity of a linear polymer of the same monomer composition and molecular weight under the same conditions.

20. The polishing system of claim 1 , wherein the system comprises an abrasive suspended in the liquid carrier.

21. The polishing system of claim 1 , wherein the system comprises an abrasive fixed to a polishing pad.

22. The polishing system of claim 1 , further comprising one or more polishing additives selected from the group consisting of chelating or complexing agents, oxidizing agents, surfactants, anti-foaming agents, biocides, and combinations thereof.

23. A method of polishing a substrate comprising:

(i)contacting a substrate with the polishing system of claim 1 , and

(ii)abrading at least a portion of the substrate to polish the substrate.

Assignments (10)
CHANGE OF NAME Recorded Nov 22, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065663/0466 →
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
RELEASE OF SECURITY INTEREST Recorded Nov 16, 2018
From: BANK OF AMERICA, N.A.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 047587/0119 →
NOTICE OF SECURITY INTEREST IN PATENTS Recorded Feb 16, 2012
From: CABOT MICROELECTRONICS CORPORATION
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 027727/0275 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 2, 2004
From: MOEGGENBORG, KEVIN J.; SUN, FRED F.
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 014297/0839 →