Halide anions for metal removal rate control

1. A chemical-mechanical polishing composition for polishing a substrate comprising:

(a) a liquid carrier,

(b) an abrasive suspended in the liquid carrier, wherein the abrasive comprises condensation-polymerized silica particles,

(c) hydrogen peroxide,

(d) hydrogen chloride or hydrogen bromide, an alkali metal chloride or bromide, an alkali earth metal chloride or bromide, a Group IIIA chloride or bromide, a transition metal chloride or bromide, or a combination thereof in an amount sufficient to provide about 0.1 mM to about 30 mM of chloride or bromide anion, and

(e) benzotriazole,

wherein the chemical-mechanical polishing composition has a pH of about 1 to about 2.5.

2. The polishing composition of claim 1 , wherein the liquid carrier comprises water.

3. The polishing composition of claim 1 , wherein the condensation-polymerized silica is present in an amount of about 0.1 wt. % to about 10 wt. %.

4. The polishing composition of claim 1 , wherein the hydrogen peroxide is present in an amount of about 3 wt. % or less.

5. The polishing composition of claim 1 , wherein the polishing composition comprises a compound selected from the group consisting of hydrogen chloride, magnesium chloride, calcium chloride, strontium chloride, barium chloride, potassium chloride, cesium chloride, lithium chloride, sodium chloride, rubidium chloride, aluminum chloride, gallium chloride, indium chloride, thallium chloride, zinc chloride, copper chloride, ferric chloride, ferrous chloride, hydrogen bromide, lithium bromide, potassium bromide, cesium bromide, rubidium bromide, sodium bromide, magnesium bromide, calcium bromide, strontium bromide, barium bromide, aluminum bromide, gallium bromide, indium bromide, thallium bromide, zinc bromide, copper bromide, ferric bromide, ferrous bromide, and combinations thereof.

6. The polishing composition of claim 1 , wherein the concentration of benzotriazole is about 100 ppm to about 2000 ppm.

7. The composition of claim 1 , wherein the substrate comprises a copper layer and wherein the composition reduces the removal rate of the copper layer as compared to the same composition without the chloride or bromide anion.

8. A method of chemically-mechanically polishing a substrate, which method comprises:

(i) contacting a substrate with a chemical-mechanical polishing composition comprising:

(a) a liquid carrier,

(b) an abrasive suspended in the liquid carrier, wherein the abrasive comprises condensation-polymerized silica particles,

(c) hydrogen peroxide,

(d) hydrogen chloride or hydrogen bromide, an alkali metal chloride or bromide, an alkali earth metal chloride or bromide, a Group IIIA chloride or bromide, a transition metal chloride or bromide, or a combination thereof in an amount sufficient to provide about 0.1 mM to about 30 mM of chloride or bromide anion, and

(e) benzotriazole,

wherein the chemical-mechanical polishing composition has a pH of about 1 to about 2.5,

(ii) moving the chemical-mechanical polishing composition relative to the substrate, and

(iii) abrading at least a portion of the substrate to polish the substrate.

9. The method of claim 8 , wherein the liquid carrier comprises water.

10. The method of claim 8 , wherein the condensation-polymerized silica is present in an amount of about 0.1 wt. % to about 10 wt. %.

11. The method of claim 8 , wherein the hydrogen peroxide is present in an amount of about 3 wt. % or less.

12. The method of claim 8 , wherein the polishing composition comprises a compound selected from the group consisting of hydrogen chloride, magnesium chloride, calcium chloride, strontium chloride, barium chloride, potassium chloride, cesium chloride, lithium chloride, sodium chloride, rubidium chloride, aluminum chloride, gallium chloride, indium chloride, thallium chloride, zinc chloride, copper chloride, ferric chloride, ferrous chloride, hydrogen bromide, lithium bromide, potassium bromide, cesium bromide, rubidium bromide, sodium bromide, magnesium bromide, calcium bromide, strontium bromide, barium bromide, aluminum bromide, gallium bromide, indium bromide, thallium bromide, zinc bromide, copper bromide, ferric bromide, ferrous bromide, and combinations thereof.

13. The method of claim 8 , wherein the concentration of benzotriazole is about 100 ppm to about 2000 ppm.

14. The method of claim 8 , wherein the substrate comprises at least one layer of tantalum and at least one layer of copper, and a portion of the tantalum and a portion of the copper are abraded to polish the substrate.

15. The method of claim 14 , wherein the copper layer is removed from the substrate at a rate of about 1000 Å/min or less.

16. The method of claim 14 , wherein the copper layer is removed from the substrate at a rate of about 800 Å/min or less.

17. The method of claim 14 , wherein the copper layer is removed from the substrate at a rate of about 500 Å/min or less.

18. The method of claim 14 , wherein the copper layer is removed from the substrate at a rate of about 300 Å/min or less.

19. The method of claim 14 , wherein the tantalum layer is removed from the substrate at a rate of about 100 Å/min or more.

20. The method of claim 14 , wherein the tantalum layer is removed from the substrate at a rate of about 200 Å/min or more.

21. The method of claim 8 , wherein the method further comprises contacting the substrate with a polishing pad and moving the polishing pad relative to the substrate.

22. The method of claim 8 , wherein the substrate comprises a copper layer and wherein the method reduces the removal rate of the copper layer as compared to the same method without the chloride or bromide anion.