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View Patent ↗The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
1. A chemical-mechanical polishing composition comprising:
(a) wet-process silica particles,
(b) a cationic compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, a pyridinium salt, and an imidazolium salt,
(c) a carboxylic acid having seven or more carbon atoms,
(d) an oxidizing agent that oxidizes a metal, and
(e) water,
wherein the polishing composition has a pH of about 1 to about 6, and wherein the cationic compound interacts with the silica particles such that the silica particles have a positive zeta potential at the pH of the polishing composition.
2. The polishing composition of claim 1 , wherein the polishing composition comprises about 0.1 wt. % to about 5 wt. % silica particles.
3. The polishing composition of claim 1 , wherein the silica particles have an average particle size of about 20 nm to about 100 nm.
4. The polishing composition of claim 1 , wherein the polishing composition comprises an amine-substituted silane.
5. The polishing composition of claim 4 , wherein the amine-substituted silane is selected from the group consisting of aminopropyl trialkoxysilane, bis(2-hydroxyethyl)-3-aminopropyl trialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl) trialkoxysilane), 3-(N-styrylmethyl)-2-aminoethylaminopropyl triaalkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyl trialkoxysilane, trialkoxysilyl propyl-N,N,N-trimethyl ammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethyl ammonium chloride, (bis(methyldialkoxysilylpropyl)-N-methyl amine, bis(trialkoxysilylpropyl) urea, bis(3-(trialkoxysilyl)propyl)-ethylenediamine, and bis(3-(trialkoxysilyl)propyl)amine.
6. The polishing composition of claim 4 , wherein the polishing composition comprises about 50 ppm to about 500 ppm of the amine-substituted silane.
7. The polishing composition of claim 1 , wherein the polishing composition comprises a tetraalkylammonium salt.
8. The polishing composition of claim 7 , wherein the polishing composition comprises about 50 ppm to about 1500 ppm of the tetraalkylammonium salt.
9. The polishing composition of claim 1 , wherein the polishing composition comprises a tetraalkylphosphonium salt.
10. The polishing composition of claim 9 , wherein the polishing composition comprises about 10 ppm to about 1500 ppm of the tetraalkylphosphonium salt.
11. The polishing composition of claim 1 , wherein the polishing composition comprises a pyridinium salt.
12. The polishing composition of claim 11 , wherein the polishing composition comprises about 10 ppm to about 1000 ppm of the pyridinium salt.
13. The polishing composition of claim 1 , wherein the polishing composition comprises an imidazolium salt.
14. The polishing composition of claim 13 , wherein the polishing composition comprises about 10 ppm to about 1000 ppm of the imidazolium salt.
15. The polishing composition of claim 1 , wherein the carboxylic acid comprises a cyclic carbon-containing substituent.
16. The polishing composition of claim 15 , wherein the carboxylic acid is selected from the group consisting of 2-hydroxybenzoic acid, 3-hydroxybenzoic acid, 4-hydroxybenzoic acid, 2,3-dihydroxybenzoic acid, 2,4-dihydroxybenzoic acid, 2,5-dihydroxybenzoic acid, 2,6-dihydroxybenzoic acid, and 3,5-dihydroxybenzoic acid.
17. The polishing composition of claim 16 , wherein the carboxylic acid is 2-hydroxybenzoic acid.
18. The polishing composition of claim 16 , wherein the carboxylic acid is 2,6-dihydroxybenzoic acid.
19. The polishing composition of claim 1 , wherein the carboxylic acid is selected from the group consisting of benzoic acid, 1,2-benzenedicarboxylic acid, 1,2,4-benzenetricarboxylic acid, phenylmalonic acid, cyclohexanecarboxylic acid, trans-cyclohexane-1,2-dicarboxylic acid, and phenylmalonic acid.
20. The polishing composition of claim 19 , wherein the polishing composition comprises about 10 ppm to about 2000 ppm of the carboxylic acid.
21. The polishing composition of claim 1 , wherein the oxidizing agent is hydrogen peroxide.
22. The polishing composition of claim 1 , wherein the polishing composition further comprises a corrosion inhibitor.
23. The polishing composition of claim 22 , wherein the corrosion inhibitor comprises a triazole or a tetrazole group.
24. The polishing composition of claim 22 , wherein the corrosion inhibitor is benzotriazole.
25. The polishing composition of claim 22 , wherein the polishing composition comprises about 10 ppm to about 1000 ppm of the corrosion inhibitor.
26. The polishing composition of claim 1 , wherein the polishing composition has a pH of about 3 to about 5.
27. A method of chemically-mechanically polishing a substrate, which method comprises:
(i) contacting a substrate with a chemical-mechanical polishing composition comprising:
(a) wet-process silica particles,
(b) a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt,
(c) a carboxylic acid having seven or more carbon atoms,
(d) an oxidizing agent that oxidizes at least a portion of a substrate, and
(e) water,
wherein the polishing composition has a pH of about 1 to about 6, and wherein the cationic compound interacts with the silica particles such that the silica particles have a positive zeta potential at the pH of the polishing composition,
(ii) moving the polishing composition relative to the substrate with the chemical-mechanical polishing composition therebetween, and
(iii) abrading at least a portion of the substrate to polish the substrate.
28. The method of claim 27 , wherein the polishing composition comprises about 0.1 wt. % to about 5 wt. % silica particles.
29. The method of claim 27 , wherein the silica particles have an average particle size of about 20 nm to about 100 nm.
30. The method of claim 27 , wherein the polishing composition comprises an amine-substituted silane.
31. The method of claim 30 , wherein the amine-substituted silane is selected from the group consisting of aminopropyl trialkoxysilane, bis(2-hydroxyethyl)-3-aminopropyl trialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl) trialkoxysilane), 3-(N-styrylmethyl)-2-aminoethylaminopropyl triaalkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyl trialkoxysilane, trialkoxysilyl propyl-N,N,N-trimethyl ammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethyl ammonium chloride, (bis(methyldialkoxysilylpropyl)-N-methyl amine, bis(trialkoxysilylpropyl) urea, bis(3-(trialkoxysilyppropyl)-ethylenediamine, and bis(3-(trialkoxysilyl)propyl)amine.
32. The method of claim 27 , wherein the polishing composition comprises about 50 ppm to about 500 ppm of the amine-substituted silane.
33. The method of claim 27 , wherein the polishing composition comprises a tetraalkylammonium salt.
34. The method of claim 33 , wherein the polishing composition comprises about 50 ppm to about 1500 ppm of the tetraalkylammonium salt.
35. The method of claim 27 , wherein the polishing composition comprises a tetraalkylphosphonium salt.
36. The method of claim 35 , wherein the polishing composition comprises about 50 ppm to about 250 ppm of the tetraalkylphosphonium salt.
37. The method of claim 27 , wherein the polishing composition comprises a pyridinium salt.
38. The method of claim 37 , wherein the polishing composition comprises about 50 ppm to about 250 ppm of the pyridinium salt.
39. The method of claim 27 , wherein the polishing composition comprises an imidazolium salt.
40. The method of claim 39 , wherein the polishing composition comprises about 50 ppm to about 250 ppm of the imidazolium salt.
41. The method of claim 27 , wherein the carboxylic acid comprises a cyclic carbon-containing substituent.
42. The method of claim 27 , wherein the polishing composition comprises about 100 ppm to about 500 ppm of the carboxylic acid.
43. The method of claim 27 , wherein the substrate comprises silicon dioxide, and a portion of the silicon dioxide is removed from the substrate to polish the substrate.
44. The method of claim 43 , wherein the silicon dioxide is carbon-doped silicon dioxide.
45. The method of claim 44 , wherein the substrate further comprises tantalum, and a portion of the tantalum is removed from the substrate to polish the substrate.
46. The method of claim 45 , wherein the substrate further comprises copper, and a portion of the copper is removed from the substrate to polish the substrate.