Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
View Patent ↗The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.
1. A method of chemically-mechanically polishing a substrate comprising silicon nitride and silicon oxide, which method comprises:
(i) contacting a substrate with a polishing pad and a chemical-mechanical polishing composition comprising:
(a) a cationic abrasive,
(b) a cationic polymer selected from the group consisting of (1) about 0. 1 ppm to about 50 ppm of a cationic homopolymer, (2) about 0.1 ppm to about 50 ppm of a cationic copolymer comprising at least one cationic monomer and at least one nonionic monomer, wherein the at least one cationic monomer comprises more than 50% of the cationic copolymer on a molar basis, and (3) about 0.1 ppm to about 200 ppm of a cationic copolymer comprising at least one cationic monomer and at least one nonionic monomer, wherein the at least one cationic monomer comprises 50% or less of the copolymer on a molar basis, and
(c) water,
wherein the polishing composition has a pH of about 7 or less,
(ii) moving the polishing pad relative to the substrate with the chemical-mechanical polishing composition therebetween, and
(iii) abrading at least a portion of the substrate to polish the substrate, wherein the silicon nitride is selectively removed in preference to the silicon oxide.
2. The method of claim 1 , wherein the cationic abrasive is selected from the group consisting of alumina, titania, and doped silica.
3. The method of claim 1 , wherein the cationic abrasive is ceria.
4. The method of claim 1 , wherein the cationic abrasive is zirconia.
5. The method of claim 1 , wherein the cationic abrasive is present in an amount of about 0.01 wt. % to about 1 wt. %.
6. The method of claim 1 , wherein the cationic polymer is a cationic homopolymer.
7. The method of claim 6 , wherein the cationic homopolymer is selected from the group consisting of ethoxylated polyethyleneimine, polydiallyldimethylammonium halide, poly(amidoamine), poly(methacryloyloxyethyltrimethylammonium)chloride, poly(methacryloyloxyethyldimethylbenzylammonium)chloride, poly(vinylpyrrolidone), poly(vinylimidazole), poly(vinylpyridine), and poly(vinylamine).
8. The method of claim 6 , wherein the cationic homopolymer is polyethyleneimine.
9. The method of claim 8 , wherein polyethyleneimine is present in the polishing composition in an amount of about 0.1 ppm to about 20 ppm.
10. The method of claim 6 , wherein the cationic homopolymer is a cationic transition metal oligomer.
11. The method of claim 1 , wherein the cationic polymer is a cationic copolymer.
12. The method of claim 11 , wherein the cationic polymer comprises at least one monomer selected from the group consisting of diallyldimethylammonium halide, methacryloyloxyethyltrimethylammonium chloride, methacryloyloxyethyldimethylbenzylammonium chloride, 2-aminoethyl methacrylate, N-(3-aminopropyl)methacrylate, vinylimidazole, vinylpyridine, vinylamine, and amidoamine.
13. The method of claim 11 , wherein the cationic monomer is ethyleneimine.
14. The method of claim 1 , wherein the cationic polymer has an average molecular weight of about 5000 Daltons or more.
15. The method of claim 14 , wherein the cationic polymer comprises nitrogen, sulfonium groups, phosphonium groups, or a combination thereof.
16. The method of claim 11 , wherein the pH is about 4 to about 7.
17. The method of claim 11 , wherein the polishing composition further comprises a carboxylic acid.
18. The method of claim 17 , wherein the carboxylic acid is an amino carboxylic acid.