Composition and method for planarizing surfaces
View Patent ↗The invention provides compositions and methods for planarizing or polishing a surface. One composition comprises about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina particles have an average diameter of 200 nm or less, and 80% of the α-alumina particles have a diameter of about 500 nm or less, an organic acid, a corrosion inhibitor, and water. Another composition comprises α-alumina particles, an organic acid, dual corrosion inhibitors of triazole and benzotriazole, wherein the wt. % ratio of the triazole to benzotriazole is about 0.1 to about 4.8, and water.
1. A chemical-mechanical polishing composition for polishing of a substrate having a copper-containing film at the surface, comprising:
(a) about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina particles have an average diameter of 200 nm or less, and 90% of the α-alumina particles have a diameter of about 500 nm or less,
(b) an organic acid,
(c) a corrosion inhibitor, and
(d) water,
wherein the polishing composition has a pH of about 4 to about 14.
2. The polishing composition of claim 1 , wherein the α-alumina particles have an average diameter of 100 nm or less and 90% of the α-alumina particles have a diameter of 200 nm or less.
3. The polishing composition of claim 1 , wherein the α-alumina particles are present in an amount of about 0.1 wt. % to about 5 wt. %.
4. The polishing composition of claim 3 , wherein the α-alumina particles are present in an amount of about 0.3 wt. % to about 1 wt. %.
5. The polishing composition of claim 1 , wherein the polishing composition has a pH of about 6 to 10.
6. The polishing composition of claim 1 , wherein the corrosion inhibitor is selected from the group consisting of 1,2,3-triazole, 1,2,4-triazole, benzotriazole, benzimidazole, benzothiazole, and mixtures thereof.
7. The composition of claim 6 , wherein the corrosion inhibitor is a mixture of triazole and benzotriazole.
8. The composition of claim 7 , wherein the mixture of triazole and benzotriazole has a triazole to benzotriazole wt. % ratio of about 0.1 to about 4.8.
9. The composition of claim 8 , wherein the mixture of triazole and benzotriazole has a triazole to benzotriazole wt. % ratio of about 0.1 to about 4.4.
10. The polishing composition of claim 1 , wherein the organic acid is selected from the group consisting of malonic acid, succinic acid, adipic acid, lactic acid, malic acid, citric acid, glycine, aspartic acid, tartaric acid, gluconic acid, iminodiacetic acid, and fumaric acid.
11. The polishing composition of claim 10 , wherein the organic acid is tartaric acid.
12. The polishing composition of claim 1 , further comprising an oxidizing agent selected from the group consisting of bromates, bromites, chlorates, chlorites, hydrogen peroxide, hypochlorites, iodates, monoperoxy sulfate, monoperoxy sulfite, monoperoxyphosphate, monoperoxyhypophosphate, monoperoxypyrophosphate, organo-halo-oxy compounds, periodates, permanganate, peroxyacetic acid, and mixtures thereof.
13. The polishing composition of claim 1 , wherein the α-alumina particles have an average diameter of 100 nm or less and 95% of the α-alumina particles have a diameter of 500 nm or less.
14. The method of chemically-mechanically polishing a substrate having a copper-containing film at the surface comprising:
(i) contacting a substrate with a polishing pad and a chemical-mechanical polishing composition comprising:
(a) about 0.01 wt. % to about 20 wt. % α-alumina particles, wherein the α-alumina particles have an average diameter of 200 nm or less, and 90% of the α-alumina particles have a diameter of about 500 nm or less,
(b) an organic acid,
(c) a corrosion inhibitor,
(d) an oxidizing agent, and
(e) water
wherein the polishing composition has a pH of about 4 to 14,
(ii) moving the polishing pad relative to the substrate with chemical-mechanical polishing composition therebetween, and
(iii) abrading at least a portion of the substrate to polish the substrate.
15. The method of claim 14 , wherein the α-alumina particles have an average diameter of 100 nm or less and 90% of the α-alumina particles have a diameter of 200 nm or less.
16. The method of claim 14 , wherein the polishing pad is moving relative to the substrate with a down force pressure of about 3 kPa to about 21 kPa.
17. The method of claim 14 , wherein the α-alumina particles are present in an amount of about 0.1 wt. % to about 5 wt. %.
18. The method of claim 17 , wherein the α-alumina particles are present in an amount of about 0.3 wt. % to about 1 wt. %.
19. The method of claim 14 , wherein the polishing composition has a pH of about 6 to 10.
20. The method of claim 14 , wherein the corrosion inhibitor is selected from the group consisting of 1,2,3-triazole, 1,2,4-triazole, benzotriazole, benzimidazole, benzothiazole, and mixtures thereof.
21. The method of claim 14 , wherein the organic acid is selected from the group consisting of malonic acid, succinic acid, adipic acid, lactic acid, malic acid, citric acid, glycine, aspartic acid, tartaric acid, gluconic acid, iminodiacetic acid, and fumaric acid.
22. The method of claim 21 , wherein the organic acid is tartaric acid.
23. The method of claim 14 , wherein the oxidizing agent is selected from the group consisting of bromates, bromites, chlorates, chlorites, hydrogen peroxide, hypochlorites, iodates, monoperoxy sulfate, monoperoxy sulfite, monoperoxyphosphate, monoperoxyhypophosphate, monoperoxypyrophosphate, organo-halo-oxy compounds, periodates, permanganate, peroxyacetic acid, and mixtures thereof.
24. The method of claim 14 , wherein the α-alumina particles have an average diameter of 100 nm or less and 95% of the α-alumina particles have a diameter of 500 nm or less.